BC635 Search Results

bc736

Abstract: BC635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

bc639

Abstract: BC635 BC637 transistor bc635 bc635 datasheet transistor BC639 BC639-16 BC639-10 transistor 639
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 BC635/637/639 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

bc639

Abstract: BC637 BC635 TRANSISTOR E C B BC635 bc639 equivalent
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter

bc639

Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC

transistor C639

Abstract: transistor C635 c639 transistor C639 w
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635

bc639

Abstract: BC63x BC639-16ZL1 BC637
Contextual Info: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC635 BC637 BC639 Collector-Base Voltage BC635 BC637

BC838

Abstract: BC640 bc636 npn transistor BC63 transistor BC639 BC635 BC636 BC637 BC638 BC639
Contextual Info: B C 6 3 5 THRU’ B C 6 4 0 ÏA COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ‘ TO-92 for AF driver stages and amplifier applications up to 1A. ABSOLUTE MAXIMUM RATINGS

BC640

Abstract: BC638 BC636 bc639 bc638-10 BC635 BC636-10 BC637 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
Contextual Info: N AUER PHILIPS/DISCRETE bTE T> • bbS3R31 □OSTS'ib 4=17 ■ APX BÜ636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.

bc639

Abstract: BC637 BC635 BC635 TRANSISTOR E C B
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC

BC635

Contextual Info: Transistors BC635 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Rating Unit Collector Emitter Voltage at R BE = 1Kohm VcER 45 V Collector Emitter Voltage VcES 45 V Collector Emitter Voltage

BC636

Abstract: BC638 BC640
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

BC639

Abstract: BC635 BC637 transistor bc639 BC639-10
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC635/637/639 TRANSISTOR NPN TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

BC635

Abstract: TBC635
Contextual Info: BC635 Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • NPN silicon planar epitaxial transistors. • Driver stages of audio amplifier application. TO-92 Plastic Package

bc 148 npn transistor

Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
Contextual Info: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)

Contextual Info: BC635 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m

transistor BC636

Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
Contextual Info: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

bc639

Abstract: BC635 BC637 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter

bc639

Abstract: BC635 BC637
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC

BC635 TRANSISTOR E C B

Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC635/637/639 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter Voltage at R be =1 Kohm C ollector Em itter Voltage C ollector Em itter Voltage

Contextual Info: N AUER PHILIPS/DISCRETE b^E ]> • £,^53^31 □D27SC3D T7T ■ APX BC635; BC637; BC639 A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.

BC639 MOTOROLA

Abstract: transistors BC 293 BC635 BC637 BC639 BC635 MOTOROLA
Contextual Info: MOTOROLA Order this document by BC635/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC635 BC637 BC639 NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 635 BC 637 BC 639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage

BC639

Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050
Contextual Info: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage

IRIG B generator

Abstract: IRIG B TANS III GPS IRIG B time sync hardware IRIG-b irig b converter NASA36 IRIG am output circuit bc350VXI IRIG amplitude
Contextual Info: bc635VME/bc350VXI Time and Frequency Processor 8500-0019 User’s Guide Rev. D June 2000 This Page Intentionally Left Blank Declaration of Conformity Application of Council Directive s Standard(s) to which Conformity is Declared 89/336/EEC EN 50081-1, EN 50082-1