JLN 2003 Search Results

Contextual Info: IBM04184ARLAA IBM04364ARLAA P relim inary 128K X 36 & 256K X 18 SR AM Features • 128K x 36 or 256K x 18 Organizations • Latched Outputs • 0.4 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Register-Latch Mode Of Opera­

BCR3FM-12RB

Contextual Info: Preliminary Datasheet BCR3FM-12RB R07DS0962EJ0100 Rev.1.00 Aug 29, 2014 600V - 3A - Triac Medium Power Use Features • • • • • Insulated Type • Planar Passivation Type • Viso: 2000 V IT RMS : 3 A VDRM : 600 V Tj: 150 °C IFGTI, IRGTI, IRGTΙΙΙ: 15 mA (10 mA) Note4

Contextual Info: Preliminary Datasheet CR2PM-8UE 400V - 2A - Thyristor Low Power Use R07DS1160EJ0100 Rev.1.00 Mar 11, 2014 Features • IT AV : 2 A • VDRM : 400 V • IGT: 100 µA • Planar Type Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) ) 2

Contextual Info: Data Sheet HAT1111C R07DS1177EJ0700 Previous: REJ03G0446-0600 Rev.7.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting

Contextual Info: Preliminary Datasheet H5N5005PL-E0-E 500V - 60A - MOS FET High Speed Power Switching R07DS1199EJ0300 Rev.3.00 Mar 25, 2014 Features • Low on-resistance RDS on = 0.070 Ω typ. (at ID = 30 A, VGS= 10 V, Ta = 25°C) • Low leakage current • High speed switching

Contextual Info: Data Sheet HAT2217C R07DS1183EJ0400 Previous: REJ03G0449-0300 Rev.4.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 4.5 V gate drive devices.

JLN 2003

Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Contextual Info: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

Contextual Info: Preliminary Datasheet H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching R07DS1200EJ0100 Rev.1.00 Mar 25, 2014 Features • Low on-resistance RDS on = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

Contextual Info: Preliminary Datasheet H5N5004PL-E0-E 500V - 50A - MOS FET High Speed Power Switching R07DS1198EJ0100 Rev.1.00 Mar 26, 2014 Features • Low on-resistance R DS on = 0.09 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

Contextual Info: Preliminary Datasheet 2SK1521-E1-E R07DS1194EJ0300 Rev.3.00 Mar 26, 2014 450V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.08 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current

Contextual Info: Preliminary Datasheet CR2AS-16A R07DS1211EJ0100 Rev.1.00 Jun 03, 2014 800V – 2A -Thyristor Medium Power Use Features • IT AV : 2 A • VDRM : 800 V • IGT: 100 µA • Non-Insulated Type • Planar Type Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A)

Contextual Info: Preliminary Datasheet 2SK1629-E1-E 500V - 30A - MOS FET High Speed Power Switching R07DS1197EJ0200 Rev.2.00 Mar 26, 2014 Features • Low on-resistance RDS on = 0.22 Ω typ. (at ID = 15 A, VGS= 10 V, Ta = 25°C) • High speed switching • Low drive current

Contextual Info: Data Sheet HAT1069C R07DS1169EJ0400 Previous: REJ03G0164-0300 Rev.4.00 Mar 19, 2014 Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance RDS(on) = 38 m Ω typ (at VGS = –4.5 V) • High speed switching • Capable of 1.8 V gate drive

Contextual Info: Preliminary Datasheet RJL5032DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0251EJ0200 Rev.2.00 Mar 06, 2014 Features • Low on-state resistance RDS on = 2.2 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C) • High speed switching • Built in fast recovery diode

Contextual Info: Preliminary Datasheet 2SK1527-E1-E R07DS1196EJ0100 Rev.1.00 Mar 26, 2014 500V - 40A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.12 Ω typ. (at ID = 20 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current

Contextual Info: Data Sheet HAT2204C R07DS1180EJ0600 Previous: REJ03G0448-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device

Contextual Info: Data Sheet HAT2205C R07DS1181EJ0500 Previous: REJ03G1237-0400 Rev.5.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices.

Contextual Info: Preliminary Datasheet HAT1093C R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS on = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting

Contextual Info: Data Sheet HAT1108C R07DS1176EJ0600 Previous: REJ03G1234-0500 Rev.6.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 155 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting

Contextual Info: Data Sheet HAT2196C R07DS1178EJ0600 Previous: REJ03G1235-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices.

Contextual Info: Data Sheet HAT2240C R07DS1184EJ0500 Previous: REJ03G1241-0400 Rev.5.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 75 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device

Contextual Info: Preliminary Datasheet HAT2203C R07DS0323EJ0600 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device

Contextual Info: Data Sheet HAT1090C R07DS1171EJ0500 Previous: REJ03G1228-0400 Rev.5.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 50 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 2.5 V gate drive devices. • High density mounting

Contextual Info: Data Sheet HAT2206C R07DS1182EJ0600 Previous: REJ03G1238-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices.