K 151 TRANSISTOR Search Results

Contextual Info: FM21L16 2-Mbit 128 K x 16 F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

Contextual Info: FM21LD16 2-Mbit 128 K x 16 F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

Contextual Info: SANKEN ELEC TR IC CO LTD S5E T> 7110741 0000103 151 H S A K J Silicon NPN Triple Diffused Planar ☆High Speed Switching Transistor 2SC4140 Application Exampt« : • Outline Drawing 2 - - MT-100IT03P Switching Regulator and General Purpose Electrical Characteristics

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD1691 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT • HIGH PO W ER DISSIPATIO N : Pc = 1.3W TA=25°C • C om plem entary to K S B 1 151 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic Sym bol

b1151

Contextual Info: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW CO LLECTO R SATURATION VOLTAGE LARGE CURRENT HIGH P O W E R D ISSIPATIO N : Pc = 1.3W TA= 2 5 t Complementary to K S B 1 151 ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Collector- Base Voltage Collector-Emitter Voltage

NPN Transistor 2N3055

Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
Contextual Info: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525

Contextual Info: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO -126 • HIGH POW ER D ISSIPATIO N : Pc = 1 .3W T a =25°C • C om plem entary to K S B 1 151 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector- Base Voltage C h a ra c te ris tic

LD20A

Abstract: iRF151
Contextual Info: JOE T> _ • 7 ^ 5^537 OOaqTMq 1 ■ C T SGS-THOMSON ^7# RjflO g H[L[l(g¥lS®iD®i T i w K o T IRF 150 -151 IRF 152-153 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDss IRF150 100 V ^DS(on 0.055 a •d 40 A IRF151 60 V 0.055 fi 40 A IRF152

AC181

Abstract: AC161 AG151 AC16F Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1
Contextual Info: ESC D • û235bDS Q0Q403S ^ « S I E G 1 PNP Germanium Transistors AC 151 SIEMENS AKTIENGESELLSCHAF 9 04035- 2- A— 151T - Not for new design fo r AF input and driver stages o f m ediu m perform ance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case

k 151 transistor

Abstract: transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1
Contextual Info: SSC T> m 0235bD5 0004035 ISI EG AC 151 AC 1 5 1 r PNP Germanium Transistors SIEMENS AKTIENúESELLSCHAF C 04035 T - 9 - / / Not for new design fo r AF inp u t and driver stages o f m e d iu m p erfo rm an ce AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case

KJE transistor

Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
Contextual Info: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case

IRFP RE 40

Abstract: IRFP P CHANNEL IRFP150 SGS Transistor
Contextual Info: r= Z SGS-THOM SON ^ 7#» HDfgMilLlKgirMDlgi IRFP 150/F I-151/FI IRFP 152/F I-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on IRFP150 IRFP150FI 100 V 100 V 0.055 fi 0.055 Q IRFP151 IRFP151 FI 60 V 60 V 0.055 0.055 IRFP152 IRFP152FI

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH O SCILLATO R O UTPUT PO W ER : T h e N E 5 7 5 series of N P N silicon medium pow er transistors is designed to operate in amplifiers and oscillators up to 2 G H z with supply voltages up to 18 volts. Transistors in this series

2SC1600

Abstract: ne57500 NE57510
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH OSCILLATOR OUTPUT POWER : 700 mW at 1.7 GHz The NE575 series of NPN silicon medium power transistors is designed to operate in amplifiers and oscillators up to 2 GHz with supply voltages up to 18 volts. Transistors in this series

T460

Contextual Info: 2SD923 Ë ± ' < r7 - h 7 > i > X ? TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH 3 TRANSISTOR ¡ UBT INDUSTRIAL USE POWER SUPPLY : O utline D ra w in g s * Features • Ultra high/? • hFE<7)U—T ' Î T ' l i ? E x c e l l e n t linearity in hFE • A S O ^ JÎl'

30S3

Abstract: T930 transistor f460
Contextual Info: ETM36-O3O 200a : Outline Drawings POWER TRANSISTOR MODULE ' Features • * W fc High Current High DC Current Gain • Ii f e Non Insulated Type • f f l i i : A p p lica tio n s • X W J j X ' f "Jl- > 9 High Power Switching • Uninterruptible Power Supply

transistor irfp 150

Abstract: IRFP 150 transistor irfp IRFP P CHANNEL IRFP IRFP150 3421A transistor irfp IRFP-150
Contextual Info: Æ 7 SGS-THOMSON ^ 7 £ . M ^G J M M <§§ IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI V DSS ^D S (o r 'd ' 100 100 60 60 100 100

transistor b143

Abstract: 6DI20MS-050
Contextual Info: 6DI2OMS-O5O 20 a • O utline D ra w ing s POWER TRANSISTOR MODULE F e a tu re s ’• • hFE*'i i^ '- ' High DC Current Gain • High speed sw itching • 7'J —tM U K l*3/SE Including Free W heeling Diode Insulated Type • A p p lic a tio n s 1 Power Switching

EVG31-050A

Abstract: M201 T151 Pw-50ps b39 transistor
Contextual Info: EVG31-O5OA 30a — JU L - )U POWER TRANSISTOR MODULE • t t f t : Features • 7 ■ ;- * < ') > ? ? * * - KrtB* • hFEA''fti' • Including Free Wheeling Diode High DC Current Gain Insulated Type ■ ffliâ • Applications • v T 's ? Power Switching

transister

Abstract: LE1A
Contextual Info: ETN35-O3O 300 a POWER TRANSISTOR MODULE ’ F e a tu re s • *n$L High Current High DC Current Gain • Hfe • Non Insulated Type ‘ A p p lic a tio n s • 'v T 's 'f High Power Switching Uninterruptible Power Supply • DC -t — DC Motor Controls Welding Machines

2SD627

Abstract: TI15J 2sb644
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

ed7 diode

Abstract: 2DI50M-120
Contextual Info: 2DI50M-1 20 50A / ' 7 — \ ~7 '•/'J’ TsÇ I 3.—JU : Outline Drawings POWER TRANSISTOR MODULE Features • • High A rm Short Circuit Capability • h F E *''S v.' High D C C urrent Gain • ~7l) — t M V>9'9*A — KftflR Including Free W heelin g Diode

DIODE B36

Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
Contextual Info: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —

1MBH60D-090A

Abstract: IGBT 900v 60a 1mbh60d090a 30S3 T151 T460 T930 MBH60D-090A
Contextual Info: 1MBH60D-090A I 'i l G B T IG B T INSULATED GATE BIPOLAR TRANSISTOR : Features •i H i g • h Speed Switching Low Saturation Voltage • ¡ iïA^' Îr—hÎSÎÆ MOS>r— •/ j S m a l l High Impedance Gate Package : Applications • ll/iE & S IS ilti