CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Functional Description Features The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This
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CY62148EV30
CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CBT3857
Abstract: JESD22-A114 JESD22-A115 JESD78 PCK857 SSTL16857
Text: INTEGRATED CIRCUITS CBT3857 10-bit bus switch with 10 kΩ pull-down termination resistors Product specification Supersedes data of 1998 Dec 10 Philips Semiconductors 1999 Sep 14 Philips Semiconductors Product specification 10-bit bus switch with 10 kΩ pull-down
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CBT3857
10-bit
CBT3857
JESD22-A114
JESD22-A115
JESD78
PCK857
SSTL16857
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Untitled
Abstract: No abstract text available
Text: MIL-C-26500 insert arrangements Rear face of pin insert shown socket insert opposite . Symmetrical about center line. ▲ designates Non-MS Configurations. K designates Firewall Class K inserts. H designates Hermetic inserts. Contact cavities are identified with a spiral guide line indicating cavity sequence.
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MIL-C-26500
08-03H
10-05H
10-20H
12-12H
18-8K
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
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CY62148E
Abstract: AN1064 CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVI CY62148EV30LL-45BVXI CY62148EV30LL-45ZSXI
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features
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CY62148EV30
CY62148E
AN1064
CY62148DV30
CY62148EV30LL
CY62148EV30LL-45BVI
CY62148EV30LL-45BVXI
CY62148EV30LL-45ZSXI
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925501
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular
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CY62146EV30
CY62146DV30
48-ball
44-pin
925501
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Untitled
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular
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CY62146EV30
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular
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CY62146EV30
I/O15)
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Untitled
Abstract: No abstract text available
Text: Environmental Connectors B M R K N L A M N MIL-DTL-38999 Series III Type Environmental Class Connectors E B J C D C P H J T D H U P R S E 5 Series III Series II Series IV 1 6 3 B 9-35 8-35 - A 5 4 2 A B B F B F C A C B C B C L K D K N C P G B J D A L 15-5
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MIL-DTL-38999
9-35C
MIL-STD-1560
JSFD08)
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CY62148E
Abstract: No abstract text available
Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C
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CY62148EV30
CY62148E
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lc7218
Abstract: RDSF SK 57 100 SA 2232M DIP24S LA2230 LA2232 LA2232M LC7070 MFP24S
Text: ; È Î 3 - KNo. N4416A N o . 4416A D2096 X Ns4416 £ 2 b i ' Z X < £ £ < •'. L A 2232, 2232M - r d s ^ I f LA2232, 2232M f i , R D S Îi# fflÎlfflIC T * 5 7 k H z ^ > K - /* * 7 ^ )] /# ilfeARI-SK, D K { | mm, Ò. x ^ - $ Ü H T I E f f lL S I LC7070'>>;
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N4416A
Ns4416
LA2232,
2232M-rds^
2232MÃ
057kHz>
LC7070^
LA2230,
2230MÃ
lc7218
RDSF
SK 57 100 SA
2232M
DIP24S
LA2230
LA2232
LA2232M
LC7070
MFP24S
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MS311b
Abstract: KPSE Assembly Instructions
Text: K PT /K PSE M IL-C-26482, Series 1 C onnectors K P T connectors are a series of general-purpose, In addition to the two basic se rie s, connectors for environm ent-resistant, miniature circular connec special applications are also available. They include
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IL-C-26482,
MS311b
KPSE Assembly Instructions
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SLE 4404
Abstract: MS3126 INSTRUCTIONS KPSE Assembly Instructions MS311b
Text: K PT /K PSE M IL-C-26482, Series 1 C onnectors K P T connectors are a serie s of general-purpose, In addition to the two basic se rie s, connectors for environm ent-resistant, miniature circular connec special applications are also available. They include
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IL-C-26482,
KPT02E
KPT07
SLE 4404
MS3126 INSTRUCTIONS
KPSE Assembly Instructions
MS311b
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K3007
Abstract: hp 2232 tt 2232 2232-17 DDD2272 EL2020 EL2232CM EL2232CN EL2232J t924
Text: SSE D • W K 0 ^ 9 m w im L w k W tfw K t HIGHPERFGBSWIiGlMlAUJGIfflfEtifttSDClflGtllTS D0D2272 T4T H E L A EL2232/EL2232C 80 MHz, Fast Settling, Dual Current Mode Feedback Amplifier " elantec : . /" ' P V M ~ Z S > inc F e a tu r e s G en era l D e sc r ip tio n
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DDD2272
EL2232/EL2232C
500ft
EL2020
QD02265
EL2232/EL2232C
EL2232
K3007
hp 2232
tt 2232
2232-17
EL2020
EL2232CM
EL2232CN
EL2232J
t924
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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B2232
Abstract: A18-0210 98operating tm1a V2232
Text: riVMA M oLLfHbiM M O f ly / if lT o p H b iii T p n o f l T M - 1 A MOflyJlflTOPHblN TPMOfl TRIODE n p e f l- Ha3HaseH fl/ia paóOTbi b cxeMax HM3K0HacT0TH0r0 y c u n e H k m 6e3 t o k o b b q e n n y n p a B J is n o i^ e ii c e T K M b paflMOTeXHUHeCKMX y c T p o iic T B a x .
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B03flyiuH0e.
B2232
A18-0210
98operating
tm1a
V2232
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223-28
Abstract: ES-88
Text: 7 1 3 II K EY IN G OPTION "1" NO N-KEYED OPTION K EY IN G O PTION "2” M S - 7 13 10- 1/ 4* ENG. NUMBER E.D.P. NUMBER ENG, NUMBER E.D.P. NUMBER MS-71310 - E.D.P. NUMBER 2 / 5* * * ENG. NUMBER HSG. CKT SIZE SIZE DIM . "A" MM DIM . "B" MM IN. DIM . "C" MM
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1310X91
SDMS-71310-Â
223-28
ES-88
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Untitled
Abstract: No abstract text available
Text: ADVANCE IU IIC R D N 2 5 6 K X 1 8 , 1 2 o K X 3 2 /3 6 I LVTTL, PIPELINED ZBT SRAM d R M h H - .U IV I U MT55L256L18P, MT55L128L32P, MT55L128L36P ZBT SRAM + 3.3V V dd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • •
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P
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Untitled
Abstract: No abstract text available
Text: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I LVTTL, PIPELINED ZBT SRAM d R M h H - .U IV I U MT55L256L18P, MT55L128L32P, MT55L128L36P ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • •
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P
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tt 6222-1
Abstract: FTTL 655 mtk 6225 cpu MT 6225 TRRAM ifr 422 H7 mtk 6228 mtk 6226 MTK 6227 TMP47C422U
Text: TO SH IB A TMP47C222/422 CM O S 4 t f '7 h h P - 7 TMP47C222N, TMP47C422N TMP47C222F, TMP47C422F TMP47C222U, TMP47C422U TM P47C 222/422ÌÌ, T L C S -4 7 0 v V - X * iü L fc iííjÜ k \zAD=¡ > - 9 , ^ frX ROM pnp f f ^ RAM TM P47C222N n y If — tf} EJB&. LCD K 5 >f
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P47C222/422
TMP47C222N,
TMP47C422N
TMP47C222F,
TMP47C422F
TMP47C222U,
TMP47C422U
TMP47C222/422ti,
TLCS-470v
ffi01S,
tt 6222-1
FTTL 655
mtk 6225
cpu MT 6225
TRRAM
ifr 422 H7
mtk 6228
mtk 6226
MTK 6227
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HP 2231
Abstract: hp 2232 hp 2430 ic a 2231 hcpl2231 tt 2232 HCPL-2231 HCPL-2232 HCPL-2430 HCPL-5430
Text: -2 6 3 Dual LED-Photo Diode Buffered by 3 state TTL LED-7* h • y 'f 1 * tt * m m it ig n d K + 3 ^ t - t- TTL 2 H S & 1t m vccm If max (m A ) >k VR max (V ) 5E 2 M Pm max (m W ) VcE max (V ) IS £ • / ol P ds max max (m A) (m W ) Vcc* BV min (kV )
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HCPL-5430
HCPL-5437
HCPL-2231
HCPL-2232
HCPL-2430
HP 2231
hp 2232
hp 2430
ic a 2231
hcpl2231
tt 2232
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