RDSF Search Results

2SK1925

Contextual Info: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5

F5001H

Abstract: T0220F-5 T151
Contextual Info: F5001H FUJI POWER MOS-FET IN'EUGENT POWER SWITCH Outline Drawings 10*0.2 i.5 ± 0 .2 0 5 .2 iO .2 I -eatures ►C PU direct drive >Cvertemperature, Overcurrent, Overvoltage protection ►Cpen load, short-circuit detection 12^ »L^wer RDSfon IN ST GND OU T

Contextual Info: m H a r r i 0054414 7flt. • HAS . s . . f ^ _ . . R F H 2 5 N R F H 2 5 N . ^ 1 2 8 N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features TO-218AC TOP VIEW • 25A , 180V and 2 0 0V • rDSf011) = 0 .1 5 ft • S O A is P ow er-D issipation Lim ited

GC20930

Abstract: 6v dc motor IG 2200 19
Contextual Info: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

Contextual Info: SÌ4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product V p s (V» -12 RDSfOM} ( ° ) I d (A) 0.023 @ VGs = -4.5 V ±7.5 0.030 @ VGS = -2 .5 V ±6 .7 0.045 @ Vqs = -1 -8 V ±5.4 -JuA 9° ' A V* Si S2 p p SO-8 Gì “n ! 3- n ! n Di n O2 Dt

F5001

Abstract: F5001H
Contextual Info: F5001H FUJI POWER MOS-FET IN'EUGENT POWER SWITCH Outline Drawings • -eatures • C PU direct drive • C vertemperature, Overcurrent, Overvoltage protection • Cpen load, short-circuit detection 1 2 3' • U w e r RDSf0n} IM I • high surge capability

fu110

Contextual Info: I n t e r n a t i o n a l R e c t if ie r HEXFET Power MOSFETS V B%SS Draln-to-Source BreakdownVoltage (Volt. Part Number RDSfon) On-State Resistance (Ohms) iQContinuous Drain Current 100* C 25* C (Amps) (Amps) RthJC Max Thermal Resistance row) PdOTo 2S“C

Contextual Info: CS62 www.vishay.com Vishay Milwaukee Customer Special Roundwire Resistor CS62 , Wirewound Resistors, Industrial Power, Tubular, Fixed, Adjustable, RDEF, RDSF, RDEA, RDSA CAPABILITIES • Customer special design options include -Electrical: Tolerance, wattage, resistance, dielectric

HDWB, HDWK

Abstract: RDEA, RDSA RDEF, RDSF RBEA, RBSA RBEF, RBSF RBEF RBSA
Contextual Info: HDWB, HDWK www.vishay.com Vishay Milwaukee Hardware Kits and Specifications for RBEF, RBSF, RBEA, RBSA, RDEF, RDSF, RDEA, RDSA Resistors • RBEF, RBSF datasheet: www.vishay.com/doc?31807 • RDEF, RDSF datasheet: www.vishay.com/doc?31829 • RBEA, RBSA datasheet: www.vishay.com/doc?31809

Contextual Info: RDEF, RDSF www.vishay.com Vishay Milwaukee Wirewound Resistors, Industrial Power, Tubular, Roundwire RD , Fixed (RDEF, RDSF) FEATURES • High temperature silicone or vitreous enamel coatings • Non-inductive options available • All welded construction

IRFD120

Abstract: IRFD121 IRFD122 IRFD123 irfd1201
Contextual Info: Standard Power MOSFETs - IRFD120, IRFD121, IRFD122, IRFD123 File Number 2315 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistore N -C H A N N EL E N H A N C EM EN T M O DE 1.1 A and 1.3 A, 60 V - 100 V rDsfoni= 0.3 O and 0.4 O

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta - 25 O RDSfon ID •VGS Applications Voss CV> V(tff ID (A) PD m Teh CC) VGSS(off) (V> RDS (on) m ax(Q) |Yls| @ VDS - ID ID <A) VGS (V) VDS a ID (A)

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

Contextual Info: MX25L2026E MX25L2026E DATASHEET P/N: PM1580 1 REV. 1.4, NOV. 14, 2013 MX25L2026E Contents FEATURES. 4

Contextual Info: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4

8-USON

Contextual Info: MX25L512E MX25L512E DATASHEET P/N: PM1669 1 REV. 1.3, DEC. 10, 2013 MX25L512E Contents FEATURES. 4

Serial Flash

Contextual Info: MX25L25735F MX25L25735F DATASHEET P/N: PM1799 MX25L25735F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6

MX25L12873F

Abstract: MXIC MX25l12873f
Contextual Info: MX25L12873F MX25L12873F DATASHEET P/N: PM1914 MX25L12873F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6

Contextual Info: MX25L12875F MX25L12875F DATASHEET P/N: PM1855 MX25L12875F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6

VPT09050

Abstract: *08P06P transistor SMD 352
Contextual Info: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3

VN1310N3

Contextual Info: Gì Super tex inc. VN13A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS/ Order Number / Package ^ D S O N ' d io n i (max) (min) TO-39 TO-92 40V 8Ì2 0.5A VN1304N2 VN1304N3 60V 8 ii 0.5A VN1306N2 VN1306N3

Contextual Info: Tem ic SÌ9802DY S e m i c o n d u c t o r s Dual N-Channel Reduced Qg, Fast Switching MOSFET Product Summary V D S V 20 r D S (on)(^) I d (A ) 0.055 @ V os = 4.5 V ± 4 .5 0.075 @ Vo s = 3.0 V ± 3 .8 Dì U SO-8 s, Tl Q _ o, [T S2 CE G- GE D, °i ~ T |

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

4E7 philips

Abstract: KY 711 VN2406L FL 210 transistor
Contextual Info: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n