K 2445 TRANSISTOR Search Results

a6j* pnp transistor

Abstract: transistor a6f transistor A6A marking a6a marking a6h A6k SURFACE MOUNT marking A6f transistor A6A 5 transistor A6K transistor a6f motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUH2111LT1 S E R IE S PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Device« This new series of digital transistors is designed to replace a single device and its

a6j* pnp transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola P referred D evices This new series of digital transistors is designed to replace a single device

TRANSISTOR L 287 A

Abstract: ma-6008 2SA104 2SA1048 2SC2442 337B
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Rogers RO4003

Abstract: PCB Rogers RO4003 Rogers RO4003C ro4003 RO4003C Rogers RO4003* characteristic impedance Ro4003c to FR4 3214W-1-202E BGA7124 GRM1885C1H680JA01D
Contextual Info: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 01 — 21 April 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and

A2168

Contextual Info: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 3 — 9 September 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and

BGA7124

Abstract: resistor trimmer 3214W-1-202E GRM1885C1H680JA01D RO4003C rogers* RO4003C
Contextual Info: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and

ro4003

Abstract: Rogers RO4003 PCB Rogers RO4003 RO4003C BGA7124 GRM1885C1H120JA01D 3214W-1-202E GRM1885C1H680JA01D GRM1885C1H3R3CZ01D 5512 connector molex
Contextual Info: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 3 — 9 September 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and

2SB624

Abstract: 2SD596 F50450
Contextual Info: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)

ULN2455A

Abstract: Integral ULN2455A ULN-2455A 2455A LN-2445A uln drive principle ULN pnp 2445A driver ULN pnp types of uln
Contextual Info: ULN-2435A, U LN-2445A, ULN-2455A AUTOM OTIVE LAM P MONITORS ULN-2435A, ULN-2445A, AND ULN-2455A AUTOMOTIVE LAMP MONITORS FEATURES • No Standby Power • Integral to Wiring Assem bly • Fall-Safe • Reverse Voltage Protected • Internal Transient Protection

2SJ45

Abstract: ct1010 jh074 PA33 9014 transistor 2 SC 9014 BS 5467
Contextual Info: NEC j Junction Field Effect Transistor 2SJ45 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Amplifier #S/FEA TU RES ^H /PACKA G E D IM E N S IO N S Unit : mm O itJIfEE, High gm'C't'o V gdo S4 0 V |y fs | = 9.0 mS T Y P . ( V DS = ~10 V , I D= - 1 .0 m A ,f= 1 .0 kHz)

2SD1518

Abstract: 5AE0 2SD1581 C3052
Contextual Info: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^

t1c8

Abstract: 2sk459 2SK45 JE 33 T460
Contextual Info: NEC m MOS Field E ffe c t P o w e r T r a n s is t o r + T f x r x 2SK459 FET I t f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK459ii, FET ^ • ^ E I/ P A C K A G E DIMENSIONS Unit '•mm T, S JS S D C -D C ^ v a -^, K y - f ^*4: ¿ f w a i i j f f l t L T f

2SC3733

Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Contextual Info: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier

8115, transistor

Abstract: TFK03 2SC3360 T108
Contextual Info: NEC j '> U =1 > h i> J* ^ T r a n s is t o r = 7 > S ilic o n 2SC3360 N P N x t °^ + '> 7 ; P i'> ¡ Ü I Î / ± ± i ifs «fc * U =3 > h ^ -r -y ^ V X ^ NPN Epitaxial Silicon Transistor High Voltage Amplifier and Switching ^ B U / P A C K A G E DIMENSIONS

2SK659

Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #

TRANSISTOR XL08

Abstract: XL08 tr xl08 988u 2SD1579 T460
Contextual Info: NEC Ì Ì T / \ f S ilic o n Z T r a n s is to r 2SD1579 r N P N X tf 9 3 V 1-7 |J > “ h > - ^ 3 S 5 S ffiJS iftW * i t « , « J S * x iffl NPN Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use 2SD1579ÌÌ 3 V ? 9 •

2SK426

Abstract: marking x26 2SK42 9012 transistor
Contextual Info: NEC j m^Tivrx A J u n c tio n Field E ffe c t T ra n s is to r 2SK426 N ^ - t * u =i h - ? > i > x ? N-Channel Silicon Junction Field Effect Transistor Audio Frequency Amplifier 4 $ * / FEATURES ftW M /P A C K A G E DIMENSIONS Unit : mm o i& s t ^ - e t o

8115, transistor

Abstract: 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m
Contextual Info: NEC A l i f / v Silicon T ra n sisto r A t z 2SC3209 NPN NPN Silicon Triple Diffused Transistor Chroma Output Use of Color TV or Driver of Horizontal Deflection W-MEE]/ PACKAGE DIMENSIONS ^ /F E A T U R E S U n i t : mm o ifij¡itB E "C o Vcbo —300 V,

2SC1622A

Contextual Info: NEC j > IJ Z1 > h- =7 > 9 S ilic o n T ra n s is to r 2SC1622A N P N i k ^ + v ' / ’VUJfc '> U NPN Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier H&m / P A C K A G E ^/FEA TU RES » S'J 7"') DIMENSIONS KICffl t U f t i t t o U n it : mm)

stk 2155

Abstract: stk 490 110 2SC3733 transistor NPN 2sc3733 2SA1460 N50M 2sa1460-t
Contextual Info: NEC i '> V = 3 > Silicon Tran sisto r 2S C 3 7 3 3 N P N J it x i f f l N PN Silicon Epitaxial Transistor High Speed S w itch in g , High Frequency A m plifier Industrial Use ^ H I/P A C K A G E D IM E N S IO N S 4 # * / FEATURES o ^ : i5 r L < 7 |iiii X 'f

upa74ha

Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Contextual Info: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )

NEC .PA1400H

Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
Contextual Info: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7

2SA953

Abstract: 2SA954 PA33 2sa953 TRANSISTOR
Contextual Info: NEC j m ^ T / v r x '> Y =7 U =3 V Silicon Transistors A 2SA953,954 P N P Silicon Epitaxial T ran sisto r Audio Frequency Am plifier o ¿r— f - i Y ~7 4 ^ < hz O 2S C 2002, 2 0 0 3 ¿ ^ > 7 ° u y > f o S l t P T= E , ì t « h FET " f o mW 600 u t ì è m t ^