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    K BAND DETECTOR DIODE Search Results

    K BAND DETECTOR DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    K BAND DETECTOR DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DDC2354-000

    Abstract: DDC2354-250 CDC7630-000 CDC7631-000 DDC2353-000 DDC2353-250
    Contextual Info: DATA SHEET Zero Bias Silicon Schottky Barrier Detector Diodes Features ● ● High sensitivity Low video impedance Description Skyworks series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K band. The choice of barrier metal and process


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    Alpha Industries pin diodes

    Contextual Info: Zero Bias Silicon Schottky Barrier Detector Diodes EEAlpha CDC, DDC Series Features • High Sensitivity ■ Low Video Impedance Description Alpha’s series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K-band. The choice of barrier


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    Surface Mount RF Schottky Barrier Diodes

    Contextual Info: Silicon Schottky Diodes High performance and high reliability RF and microwave Schottky diodes for your demanding mixer and detector applications New 0201 Surface Mount Silicon — for Mixer Detectors Through K Band .50 x .25 x .30 mm. VB @ 10 µA V CT @ 0.15 V


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    SMS7630-093 SMS7621-096 DMF2820 DME2127 DMJ2823 DMF2821 DME2957 DMJ2777 DMF2344 DME2333 Surface Mount RF Schottky Barrier Diodes PDF

    ND4151-3A

    Abstract: ND4151-3D
    Contextual Info: N E C / CALIFORNIA 1SE D • b427414 0001=145 S SEC K-BAND SILICON MIXER-DETECTOR SCHOTTKY DIODE ND4151-3A ND4151-3D OUTLINE DIMENSIONS FEATURES Units in mm • HIGH SENSITIVITY OUTLINE 3A • LOW DRIVE LEVEL • SMALL SIZE ' 4.0 MIN. - — • LOW COST


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    b427414 ND4151-3A ND4151-3D ND4151-3A ND4151-3D PDF

    Contextual Info: TELEFUNKEN ELECTRONIC •¡FdtUlIPWKiK electronic Cr*l««1*ehnoiegtW 17E D ■ DODÖSbM * «ALGiS S 203 P _ J C J f c k £ S Silicon Photo PIN Diode P-Type) Applications: Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.


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    BPW 89

    Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a^SQCHfci 00Q65E4 a ■ AL66 ^ RPW 89 _ , - m § F « K l& S electronic CrMlrviTschr>oiogt*s ( ^ i f / * S * 3 i Silicon Photo PIN Diode (N-Type j Applications: Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.


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    00Q65E4 5x101 BPW 89 PDF

    090Q

    Abstract: LTC DWG 05-08-1661 "RF Power Amplifier" rf power detector circuit diagram rf power amplifier 850 MHZ RF Power detector LTC1757-1CMS8 LTC1757-2CMS MS10 150K resistor
    Contextual Info: I F I R i l R i L I A i l Electrical Specifications Subject to Change u f m _LTC 1757-1/LTC 1757-2 TECHNOLOGY D iS C R IP TIO n K fìT U lK S Dual Band R F Power Am plifier Control LT C 175 7-2 Internal Schottky Diode Detector Wide Input Frequency Range: 850M Hz to 2 G H z


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    LTC1757-2) 850MHz LTC1757-1) 10-Pin LTC1757-1/LT LTC1757-1 LTC1261 LTC1550/LTC1551 900kHz 090Q LTC DWG 05-08-1661 "RF Power Amplifier" rf power detector circuit diagram rf power amplifier 850 MHZ RF Power detector LTC1757-1CMS8 LTC1757-2CMS MS10 150K resistor PDF

    pulse metal detector

    Abstract: x band diode detector waveguide diode detector x band Silicon Point Contact Mixer Diodes Schottky Barrier Diodes for detectors Silicon Detector Diodes Silicon Detector Silicon Point Contact Diode
    Contextual Info: Silicon Schottky Barrier Detector Diodes Features • ■ ■ Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications


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    Silicon Point Contact Mixer Diodes

    Abstract: ka-band mixer Silicon Detector Diodes Silicon Point Contact Diode
    Contextual Info: ALPHA IN»/ SEMICONDUCTOR 4ÛE D • 05Û54M3 D0011S0 ÔTÏ ■ ALP Silicon Schottky Barrier Detector Diodes To-jol Features Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky


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    D0011S0 Silicon Point Contact Mixer Diodes ka-band mixer Silicon Detector Diodes Silicon Point Contact Diode PDF

    Microwave detector diodes 18 GHz

    Abstract: hp11612a Microwave detector diodes Alpha SMS7630 pn junction diode ideality factor CR05-101J-T SMS7630-079 Microwave zero bias detector diodes CR05-101J microwave detector diode
    Contextual Info: Application Note A Level Detector Design for Dual-Band GSM-PCS Handsets APN1014 Introduction Schottky Detector Fundamentals Schottky diode detectors are commonly used as amplitude demodulators and level detectors in wireless and other RF and microwave signal processors. Detector


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    APN1014 SMS7630 SMS7630-079 8/00A Microwave detector diodes 18 GHz hp11612a Microwave detector diodes Alpha SMS7630 pn junction diode ideality factor CR05-101J-T Microwave zero bias detector diodes CR05-101J microwave detector diode PDF

    DDB-4503

    Abstract: KA band detector
    Contextual Info: 0585443 ALPHA ~0Ì IND/ SEMICONDUCTOR 03E 00 37 3 T-07-0 7 D eT | 05A5443 0D0D373 4 Silicon Schottky Barrier Detector Diodes -u r- • f e : '/- .- /- •: > Features • Low 1/f Noise • Bonded Junctions for Reliability • Planar Passivated Beam-Lead and Chip Construction


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    T-07-0 05A5443 0D0D373 0a37L, DDB-4503 KA band detector PDF

    180 Degree hybrid ku band

    Contextual Info: Universal Chip Mixer and 0 3 Alpha Detector Schottky Barrier Diodes t,.- , „• CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector


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    CDX76XX, CME7660 CDB7619 CDB7620 CDC7622 180 Degree hybrid ku band PDF

    Contextual Info: AjfaEM M art A M P co m p a n y Schottky Detector Diodes V 2.00 Features Case Styles • Wide Selection of Packages for Stripline, Coaxial and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band


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    MA40264-186

    Abstract: MA40207-120 MA40270-135A MA40207 MA40272 MA40108 JD2078 MA40264 MA40272 135A MA40053
    Contextual Info: Æ an A M P company Schottky Detector Diodes V 2.00 Features Case Styles See appendix for complete dimen­ • Wide Selection of Packages for Stripline, Coaxial and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band


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    100Kfl MA40264-186 MA40207-120 MA40270-135A MA40207 MA40272 MA40108 JD2078 MA40264 MA40272 135A MA40053 PDF

    MA40143

    Contextual Info: Schottky Detector Diodes Schottky Detector Diodes Rev. V4 Features Case Styles • Wide Selection of Packages for Stripline, Coaxial, and Waveguide Detectors • Chip Diodes Available • N Type Diodes • Low 1/F Noise Description This family of low capacitance Schottky diodes is


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    16GHz. MA40143 PDF

    Contextual Info: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector


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    CDX76XX, CME7660 comm69 1E-05 CDC7622 3E-06 1E-11 CDB7619 3E-09 PDF

    x band diode detector waveguide

    Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
    Contextual Info: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes


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    Contextual Info: Schottky Detector Diodes Schottky Detector Diodes Rev. V3 Features • Wide Selection of Packages for Stripline, Coaxial, and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band • Low 1/F Noise


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    alpha detector

    Abstract: CDC7622 on/gold detectors circuit
    Contextual Info: Universal Chip Mixer and Detector Schottky Barrier Diodes EBA lpha CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 W ire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector


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    CDX76XX, CME7660 CDB7619 3E-09 1E-11 1E-05 1E-05 CDC7622 CDB7619 alpha detector CDC7622 on/gold detectors circuit PDF

    Contextual Info: GEC PLES S EY S F >1 I C O N 1 U C I O K S DC1841/45 PLANAR DOPED BARRIER MICROSTRIP LID/MICROLID DETECTOR DIODE Planar Doped Barrier PDB) diodes represent a major advancement in detector technology. These diodes otter very high tangential sensitivity, high compression point and very


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    DC1841/45 retr11 DC1841 DC1845 35GHz) PDF

    LN358

    Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
    Contextual Info: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­


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    backward diode

    Abstract: tunnel diode General Electric "backward diode"
    Contextual Info: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a


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    CT3508-1 backward diode tunnel diode General Electric "backward diode" PDF

    Microwave detector diodes 18 GHz

    Abstract: hp11612a 302J Microwave detector diodes metal detector circuit with pcb SMS7630-079 Metal Detector Microwave PIN diode spice APN1014 20 GHz schottky diode
    Contextual Info: APPLICATION NOTE APN1014: A Level Detector Design for Dual-Band GSM-PCS Handsets Introduction Schottky Detector Fundamentals Schottky diode detectors are commonly used as amplitude demodulators and level detectors in wireless and other RF and microwave signal processors. Detector designs are simple to


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    APN1014: SMS7630 Microwave detector diodes 18 GHz hp11612a 302J Microwave detector diodes metal detector circuit with pcb SMS7630-079 Metal Detector Microwave PIN diode spice APN1014 20 GHz schottky diode PDF

    MA40266

    Abstract: MA40204 MA400 MA40052 ma402
    Contextual Info: Silicon Schottky Detector Diodes Features • WIDE SELECTION OF PACKAGES FOR STRIPLINE, COAXIAL AND WAVEGUIDE DETECTORS ■ CHIP DIODES AVAILABLE ■ BOTH P AND N TYPE DIODES ■ EXCELLENT SENSITIVITY THROUGH Ka-BAND ■ LOW 1/f NOISE Description Applications


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    MA40250 MA40266 MA40204 MA400 MA40052 ma402 PDF