K X 1 DRAM Search Results

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 12 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung K M 4 2 8 C 1 2 8 is a CMOS 1 2 8 K X 8 bit Dual Port DRAM. It consists ot a 1 2 8 K X 8 dynamic random

28c128

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 128 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 128 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random

Nippon capacitors

Contextual Info: HB56HW164DB Series, HB56HW165DB Series HB56HW164DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 4 k Refresh, 1-Bank Module 4 pcs of 1 M X 16 Components HB56HW165DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 1 k Refresh, 1-Bank Module (4 pcs of 1 M X 16 Components)

Nippon capacitors

Contextual Info: HB56HW164DB Series, HB56HW165DB Series HB56HW164DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 4 k Refresh, 1-Bank Module 4 pcs of 1 M X 16 Components HB56HW165DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 1 k Refresh, 1-Bank Module (4 pcs of 1 M X 16 Components)

Contextual Info: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI

Contextual Info: KMM536512B DRAM MODULES 5 1 2 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 5 1 2 B is a 5 1 2K bit X 3 6 Dynamic RAM high density memory module. The Sam­ sung K M M 5 3 6 5 1 2 B consist of sixteen CMOS 2 5 6 K X 4

Contextual Info: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI

Nippon capacitors

Contextual Info: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)

Nippon capacitors

Contextual Info: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)

Contextual Info: HB56G232 Series, HB56G132 Series HB56G232B/SB 8 MB FP DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56G132B/SB 4 MB FP DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI ADE-203-701C (Z)

Nippon capacitors

Contextual Info: HB56G232 Series, HB56G132 Series HB56G232B/SB 8 MB FP DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56G132B/SB 4 MB FP DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI ADE-203-701C (Z)

RSN 315 H 42

Abstract: RSN 314 H 41 data sheet ic 4558 4558 dd rca 645 RS 4558 64kx1 dram amd 8150 design specification dram 64kx1 Am8157
Contextual Info: Am8150 Display Refresh Controller > 3 DISTINCTIVE CHARACTERISTICS A ddress co ntro lle r in bit-m apped graphics system s Perform s video refresh, m em ory arbitration, dynam ic RAM control, and dynam ic RAM refresh functions 18-bit address supports 1 6 K x 1 , 1 6 K x 4 , 6 4 K x 1 , and

Contextual Info: HB56E836/HB56E436 Series HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M x 4 and 4 pcs of 4 M x 1 Components)

Nippon capacitors

Contextual Info: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)

Contextual Info: HB56UW472EJN Series, HB56UW464EJN Series HB56UW472EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 4 k Refresh, 1-Bank Module 18 pcs of 4 M X 4 Components HB56UW464EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 4 k Refresh, 1-Bank Module (16 pcs of 4 M X 4 Components)

Contextual Info: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)

Contextual Info: Z Am8150 Display Refresh Controller > 3 DISTINCTIVE CHARACTERISTICS A ddress co n tro lle r in bit-m apped graphics system s Perform s video refresh, m em ory arbitration, dynam ic RAM control, and dynam ic RAM refresh functions 18 -bit address supports 1 6 K x 1 , 1 6 K x 4 , 6 4 K x 1 , and

KMM591000B7

Abstract: KMM591000B-7 KMM591000B6 KMM591000B
Contextual Info: KMM591000B DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 9 1 0 0 0 B is a 1 M bit X 9 Dynamic RAM high density m em ory module. The Samsung K M M 5 9 10OOB consist o t nine K M 4 1C 10OOBJ DRAMs

m5324

Abstract: KMM5324004CK KMM5324004CKG
Contextual Info: KM M 5324004C K/C KG K M M 5324104C K /C K G DRAM M O D ULE K M M 5324004C K/CK G & KM M 5324104CK/CKG Fast Page M ode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M M 53240 1 0 4 C K is a 4 M x 3 2 b its

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

XA03

Abstract: AS4LC4M16S0
Contextual Info: Advance information •■ AS4LC16M4S0 AS4LC8M8S0 AS4LC4M16S0 I 3.3V 256Kx32 CM OS synchronous DRAM Features • O rg a n iz a tio n • • • • • • - 4 ,1 9 4 ,3 0 4 w o r d s x 4 b its x 4 b an k s 1 6 M x 4 - 2 ,0 9 7 ,1 5 2 w o r d s x 8 b its x 4 b an k s ( 8 M x 8 )

SBS IN CIRCUIT

Abstract: Nippon capacitors
Contextual Info: HB56A832BS/SBS, HB56A432BR/SBR Series HB56A832BS/SBS 32 MB Unbuffered FP DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56A432BR/SBR 16 MB Unbuffered FP DRAM SIMM 4-Mword X 32-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components)

Contextual Info: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword X 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components) HITACHI