KM41C1001 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 QG15431 Ô4S KM41C1001C CM OS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

capacitor 1c8

Contextual Info: CMOS DRAM KM41C1001C 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM41C1001BP

Contextual Info: i+2E D S A M S U N G E L E C T R O N I C S INC • 7^4142 KM41C10Ö1B GGIOOSO T ■ SflGK CMOS DRAM 1 M X 1 B it C M O S D y n a m ic R A M w ith N ib b le M o d e ‘I _ ' T ' tt b - Z 5 .- r 5 FEA TU RES GEN ERAL DESCRIPTION • Performance range: The Samsung KM41C1001B is a CMOS high speed

km41c1001

Contextual Info: CMOS DRAM ^ KM41C1001C 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM41C1001

Abstract: A953
Contextual Info: ^ —— SAMSUNG SEM ICO NDUCTOR INC Ifl — i* s PRELIMINARY SPECIFICATION CMOS DRAM KM41C1001 1 Mx 1 Bit Dynamic RAM with Nibble Mode GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAC ♦ rc KM41C1001-10 100ns 25ns 190ns KM41C1001-12 120ns 30ns

KM41C1001bp

Abstract: c1001b KM41C1001BJ
Contextual Info: KM41C1001B CMOS DRAM 1 M X 1 Bit C M O S Dynamic RAM with Nibble M ode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C1001B is a CMOS high speed 1,048,576 x 1 Dynam ic Random A ccess Memory. Its de­ sign is o p tim ized fo r high perform ance ap p lica tio n s

km41c1001

Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 7Tbm42 KM41C1001A CMOS DRAM T '4 -6 '5 1 3 - 1 M x 1 Bit Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: tcAc tnc 70ns 20ns 130ns KM41C1001A- 8 80ns 20ns 150ns KM41C1001A-10 100ns 25ns 180ns

Contextual Info: CMOS DRAM KM41C1001C 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM41C1001B CMOS DRAM 1M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C1001B is a CMOS high speed 1,048,576 x 1 Dynam ic Random A ccess Memory. Its de­ sign is o p tim ized fo r high pe rform ance ap p lica tio n s

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

M541000

Abstract: 18PIN KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 KM41C1001C-6 KM41C1001C-8 KM41C1002C-6 KM41C1002C-7 M5M41000
Contextual Info: - IM CMOS X m % ît £ °C Á D y n a m i c y * TRAC max (ns) TRCY min (ns) TCAD (ns) TAH mm (ns) y RAM (I 0 4 8 5 7 6 x 1 ) % ft +Ï TDH min (ns) THWC V D D or V C C (ns) TOY mm (ns) (ns) (V) TP 1 8 P I N X m I DD max (mA) I DD STANDBY ( I SB/ I SB2) (mA)

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

KM41C464Z

Abstract: KM41C256P KM41C464P KM41C464J KM41C256J KM41C256Z KM41C257J 1MX1 KM41C464
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 D y n a m ic R A M Capacity 2 5 6 K bit 1M bit Part Number Organization Speed ns Technology Features Packages Remark KM41C256P 256K X 1 70/80/100 CMOS Fast Page 16 Pin DIP Now KM41C256J 256K X 1 70/80/100 CMOS

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

HY51C1002-10

Abstract: km41c1000c-6 HY531000-60 511000 HM511002-10 HM511002-12 HM511002-15 HM511002P-12 HM511002P-15 HM571000JP-35R
Contextual Info: - 202 - IM CMOS X m £ í± £ iä g iE ia PC TRAC max ns) TRCY min (ns) D y n a m i c RAM (10 4 85 7 6 X 1 ) 4 V f - y 7 ’ ft fé TCAD T A H T P min ! min min (ns) (ns) i (ns¡ TWCY min (ns) M TDH nin (ns) TRWC V D D or VC C (ns) (V) 18 P I N IDD max

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258