K10N60 IGBT Search Results
K10N60 IGBT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) |
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| GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS |
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| GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) |
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| GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) |
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| GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS |
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K10N60 IGBT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
k10n60
Abstract: SKW10N60A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKP10N60A 1000NC
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SKP10N60A SKW10N60A PG-TO-220-3-1 PG-TO-247-3 k10n60 SKW10N60A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKP10N60A 1000NC | |
k10n60Contextual Info: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls |
Original |
SKP10N60A SKW10N60A PG-TO-220-3-1 SKW10N60A k10n60 | |
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Contextual Info: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: |
Original |
SKP10N60A SKW10N60A PG-TO-220-3-1 | |
k10n60
Abstract: k10n60 igbt SKP10N60A
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Original |
SKP10N60A SKW10N60A PG-TO-220-3-1 O-220AB) SKP10N60 SKW10N60 k10n60 k10n60 igbt | |
k10n60
Abstract: SKP10N60 K10N60 K10N
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SKP10N60A SKW10N60A PG-TO-220-3-1 O-220AB) SKP10N60 SKW10N60 k10n60 SKP10N60 K10N60 K10N | |
k10n60
Abstract: fast recovery diode 1000v 10A SKP10N60 K10N60
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Original |
SKP10N60A SKW10N60A PG-TO-220-3-1 O-220AB) SKP10N60 SKW10N60 k10n60 fast recovery diode 1000v 10A SKP10N60 K10N60 | |
k10n60
Abstract: SKB10N60A
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Original |
SKB10N60A SKB10N60A k10n60 | |
K10N60
Abstract: SKB10N60A ND marking
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Original |
SKB10N60A P-TO-220-3-45 K10N60 SKB10N60A ND marking | |
k10n60Contextual Info: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls |
Original |
SKB10N60A SKB10N60A k10n60 | |
k10n60
Abstract: PG-TO-263-3-2 SKB10N60A diode smd marking 5P
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Original |
SKB10N60A k10n60 PG-TO-263-3-2 SKB10N60A diode smd marking 5P | |
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Contextual Info: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for frequency inverters for washing machines, |
Original |
SKB10N60A |