K10T60 Search Results
K10T60 Datasheets Context Search
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k10t60
Abstract: igbt 1000v 10A IKB10N60T PG-TO263-3-2
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IKB10N60T k10t60 igbt 1000v 10A IKB10N60T PG-TO263-3-2 | |
K10T60
Abstract: IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A
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IKP10N60T K10T60 IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A | |
IKP10N60T
Abstract: IKP10N60T IGBT k10t60
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IKP10N60T PG-TO-220-3-1 O-220AB) IKP10N60T IGBT k10t60 | |
k10t60
Abstract: 2.2 k resistor K10T
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IKB10N60T k10t60 2.2 k resistor K10T | |
k10t60
Abstract: IKP10N60T PG-TO-220-3-1
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IKP10N60T k10t60 IKP10N60T PG-TO-220-3-1 | |
k10t60
Abstract: Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681
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IKP10N60T IKB10N60T P-TO-220-3-1 O-220AB) Oct-04 k10t60 Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681 | |
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Contextual Info: TRENCHSTOP Series IKB10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s |
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IKB10N60T | |
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Contextual Info: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
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IKB10N60T | |
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Contextual Info: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
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IKB10N60T | |
k10t60
Abstract: 5304 marking code IKA10N60T
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IKA10N60T Oct-04 k10t60 5304 marking code IKA10N60T | |
k10t60Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
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IKP10N60T PG-TO-220-3-1 k10t60 | |
k10t60
Abstract: diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A
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IKA10N60T PG-TO-220-3-31 O-220 k10t60 diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A | |
MJ-06
Abstract: Q67040-S4681
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IKB10N60T MJ-06 Q67040-S4681 | |
k10t60Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
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IKP10N60T k10t60 | |
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Contextual Info: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs |
Original |
IKA10N60T | |
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Contextual Info: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time – 5s |
Original |
IKA10N60T | |
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Contextual Info: IKA10N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s |
Original |
IKA10N60T | |
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Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
Original |
IKP10N60T | |
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Contextual Info: TRENCHSTOP Series IKP10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s |
Original |
IKP10N60T | |
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Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
Original |
IKP10N60T | |
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Contextual Info: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C |
Original |
IKA10N60T | |