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Toshiba America Electronic Components TK13A65U(STA4,Q,M) MOSFET N-CH 650V 13A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK13A65U(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK13A65D(STA4QM) Trans MOSFET N-CH 650V 13A 3-Pin TO-220SIS (Alt: TK13A65D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	TK13A65D(STA4QM)			24 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

K13A65 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K13A65U Abstract: TK13A65U k13a65 650VVGS marking code TC Silicon N Channel MOS Type Switching Regulator Contextual Info: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)	Original	TK13A65U K13A65U TK13A65U k13a65 650VVGS marking code TC Silicon N Channel MOS Type Switching Regulator	PDF
K13A65U Abstract: TK13A65U k13a65 k13a Contextual Info: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)	Original	TK13A65U K13A65U TK13A65U k13a65 k13a	PDF
k13a65 Contextual Info: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)	Original	TK13A65U k13a65	PDF
Contextual Info: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 650 V)	Original	TK13A65U	PDF
K13A65U Abstract: k13a65 TK13A65U 65A10 Contextual Info: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K13A65U Switching Regulator Applications VDSS 650 V Gate-source voltage VGSS ±30 V (Note 1) ID 13 Pulse (t = 1 ms) (Note 1) IDP 26 Drain power dissipation (Tc = 25°C) PD 40 W	Original	TK13A65U K13A65U k13a65 TK13A65U 65A10	PDF
K13A65U Abstract: TK13A65U K13A65 2-10U1B Contextual Info: K13A65U 東芝電界効果トランジスタシリコンNチャネルMOS形 DTMOSⅡ K13A65U ○ スイッチングレギュレータ用 : Vth = 3.0～5.0 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 記号定格単位ドレイン・ソース間電圧	Original	TK13A65U K13A65U TK13A65U K13A65 2-10U1B	PDF
K13A65U Abstract: TK13A65U k13a65 Contextual Info: K13A65U 東芝電界効果トランジスタシリコンNチャネルMOS形 DTMOSⅡ K13A65U ○ スイッチングレギュレータ用 : Vth = 3.0～5.0 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 記号定格単位ドレイン・ソース間電圧	Original	TK13A65U K13A65U TK13A65U k13a65	PDF
K13A65U Contextual Info: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)	Original	TK13A65U K13A65U	PDF