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    K15A60 Price and Stock

    Toshiba America Electronic Components TK15A60U(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS
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    DigiKey TK15A60U(STA4,Q,M) Tube
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    Toshiba America Electronic Components TK15A60D(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS
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    Mouser Electronics TK15A60D(STA4,Q,M) 145
    • 1 $2.23
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    Chip1Stop TK15A60D(STA4,Q,M) Bulk 21
    • 1 $0.78
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    Toshiba America Electronic Components TK15A60U(STA4,X,S)

    TK15A60U - MOSFET N-Channel 600V 15A
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    Rochester Electronics TK15A60U(STA4,X,S) 37,450 1
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    Vishay Intertechnologies VS-15EWX06FNTR-M3

    Rectifiers Hyperfast 15A 600V 18ns
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    TTI VS-15EWX06FNTR-M3 Reel 2,000 2,000
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    Vishay Intertechnologies VS-15AWL06FNTR-M3

    Rectifiers Ultrafast 15A 600V 60ns
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    TTI VS-15AWL06FNTR-M3 Reel 2,000
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    K15A60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TK15A60D

    Abstract: K15A60D TK15A60D N K15A60 TK15A60 k15a
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω(typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D TK15A60D K15A60D TK15A60D N K15A60 TK15A60 k15a

    K15A60D

    Abstract: TK15A60D K15A60 k15a
    Text: K15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		PDF TK15A60D K15A60D TK15A60D K15A60 k15a

    Untitled

    Abstract: No abstract text available
    Text: K15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U

    K15A60

    Abstract: No abstract text available
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D K15A60

    K15A60D

    Abstract: K15A60 TK15A60D S1612
    Text: K15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		PDF TK15A60D K15A60D K15A60 TK15A60D S1612

    k15a60u

    Abstract: K15A60 TK15A60U k15a
    Text: K15A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ K15A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.24Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 8.5 S (標準)


    Original     		PDF TK15A60U SC-67 2-10U1B 20070701-JA k15a60u K15A60 TK15A60U k15a

    K15A60

    Abstract: k15a60u TK15A60U k15a TK15A60 2415a TK15A
    Text: K15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U K15A60 k15a60u TK15A60U k15a TK15A60 2415a TK15A

    K15A60D

    Abstract: No abstract text available
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D K15A60D

    K15A60

    Abstract: K15A60U TK15A60 k15a TK15A60U TK15A A2440
    Text: K15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U K15A60 K15A60U TK15A60 k15a TK15A60U TK15A A2440

    K15A60U

    Abstract: No abstract text available
    Text: K15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U K15A60U

    k15a60u

    Abstract: TK15A60U k15a K15A60 TK15A60
    Text: K15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U k15a60u TK15A60U k15a K15A60 TK15A60

    k15a60u

    Abstract: K15A60 TK15A60
    Text: K15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U k15a60u K15A60 TK15A60

    k15a60d

    Abstract: K15A60 TK15A60D N k15a
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D k15a60d K15A60 TK15A60D N k15a

    K15A60U

    Abstract: K15A60 k15a TK15A60U
    Text: K15A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ K15A60U ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 : RDS (ON) = 0.24Ω (標準) • 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 8.5 S (標準)


    Original     		PDF TK15A60U SC-67 2-10U1B K15A60U K15A60 k15a TK15A60U