K17 DIODE Search Results

k17 DIODE

Abstract: TSI265B1 TSI180B1 TSI200B1 TSI220B1 TSI62B1 crowbar circuit TSIxxB1
Contextual Info: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge : Telephone set Base station for cordless set

TSI180B1

Abstract: TSI200B1 TSI220B1 TSI265B1 TSI62B1 20 kV generator schematic TSI200 k17 DIODE TSIxxB1
Contextual Info: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge : Telephone set Base station for cordless set

TSI180B1

Abstract: TSI200B1 TSI220B1 TSI265B1 TSI62B1 ST Microelectronics SO8 Marking information ST Microelectronics SO8 Marking TSIxxB1
Contextual Info: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION • ■ ■ ■ ■ ■ Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge :

schematic diagram induction

Abstract: short circuit protection schematic diagram ptc resistor diagram induction DIODE marking ED TSI180B1 TSI200B1 TSI220B1 TSI265B1 TSI62B1
Contextual Info: TSIxxB1  Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION • ■ ■ ■ ■ ■ Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge :

TSI265B1

Abstract: TSI180B1 TSI200B1 TSI220B1 TSI62B1 k17 DIODE TSIxxB1
Contextual Info: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION • ■ ■ ■ ■ ■ Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge :

BRS212-280

Abstract: BRS212-220 BR211 BRS212 BRS212-140 BRS212-160 BRS212-180 BRS212-200 BRS212-240 BRS212-260
Contextual Info: Philips Semiconductors Product specification Breakover diodes BRS212 series GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover

DIODE ITT 310

Contextual Info: TSI Terminal set interface protection and diode bridge Features • Stand-off voltage from 62 V to 265 V ■ Peak pulse current: 30 A 10/1000 µs ■ Maximum DC current: IF = 0.2 A ■ Holding current: 150 mA SO-8 Benefits ■ Trisil technology is not subject to ageing and

Contextual Info: Philips Sem iconductors Preliminary specification Breakover diodes BR211SM series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current

24V 4.20MA

Abstract: MTL Surge Technologies 24V to 4-20MA ul 497B requirements for gas discharge tubes MTL Instruments Group
Contextual Info: ZoneBarrier Protects sensitive I/O ports against induced surges and transients ● For 24V, 4-20mA current loop applications ● Industrial Ethernet compatible versions, UL Certified Cat.5 ● Three stage protection including Gas Discharge Tube and Silicon Avalanche Diode

TP10N

Contextual Info: £ 7 7 SGS-THOMSON k7#s. BD glSÌ(S ilLI(@T^ liD(ei Application Specific Discretes a q 25 n TSIxxBI TER M IN AL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and

Contextual Info: 25E J> • bb 53 1 3 1 0 0 2 2 2 ^ 5 3 ■ DEVELOPMENT DATA BR213 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. J K N AMER PH ILI PS /D IS CR ET E T ^2S ^< D S - DUAL BREAKOVER DIODES A range of monolithic dual bidirectional breakover diodes w ith ±12% tolerance of breakover voltage.

Contextual Info: rrr •‘1! , s g s -Th o m s o n MM&œsTHDHOiH; Application Specific Discrètes T S Ix x B I TER M IN AL SET INTERFACE A Q D T M PROTECTION AND DIODE BRIDGE MAIN APPLICATION T elecom equipm en t requiring com bined protection against transient overvoltage s and

Contextual Info: 一華半導體股份有限公司 IR CONTROL MOSDESIGN SEMICONDUCTOR CORP. M21 22 IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能敘述 The M21(22) is a remote control transmitter ASIC for TV, VTR, etc. There are 65,536 customer codes setting by external diodes,

Contextual Info: 一華半導體股份有限公司 IR CONTROL MOSDESIGN SEMICONDUCTOR CORP. M21 22 IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能叙述 The M21(22) is a remote control transmitter ASIC for TV, VTR, etc. There are 65,536 customer codes setting by external diodes,

BR211

Abstract: BR211SM BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280
Contextual Info: Philips Semiconductors Preliminary specification Breakover diodes GENERAL DESCRIPTION BR211SM series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover

BR211-220

Abstract: BR211 equivalent RT-HE BR211 BR211-140 BR211-160 BR211-180 BR211-200 BR211-240 BR211-260
Contextual Info: Philips Semiconductors Product specification Breakover diodes GENERAL DESCRIPTION BR211 series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current

BR211 equivalent

Abstract: BR211-220 philips br211 220 RTHE BR211 BR211-100 BR211-120 BR211-140 BR211-160 BR211-180
Contextual Info: Philips Semiconductors Product specification Breakover diodes BR211 series GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current

209CmQ150

Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Contextual Info: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78

BR211 equivalent

Contextual Info: Philips Semiconductors Product specification Breakover diodes GENERAL DESCRIPTION BR211 series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current

SM2F

Abstract: M2480 BR216
Contextual Info: BR216 _ DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half o f the device conducts normally in one direction, but in the other direction it acts as a breakover diode.

6004 0215

Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BUDI-6000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 60 AMP BUTTON DIODES Mechanical Specification Features Void Free Vacuum Die Soldering For Maximum Mechanical Strength and Heat Dissipation

100MS

Abstract: BR210-100 pjiy M3076
Contextual Info: 25E D • ^53=133. 0G22243 4 ■ BR210 SERIES N AUER PHILIPS/DISCRETE T - 2 S - 0 ^ BREAKOVER DIODES A range of glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak

LT 228

Contextual Info: DEVELOPMENT DATA BR211 SERIES This data sheet contains advance information and specifications are subject to change without notice. BREAKOVER DIODES A range o f bidirectional diodes in hermetically sealed axial-leaded implosion-diode glass outlines w ith a

Contextual Info: 35E D I I bb53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a