BR213 Search Results

Contextual Info: BR213-260 Thyristors Dual Bidirectional Breakover Diode V BO Min. (V) V(BO) Max. (V)292 I(S) Max. (A)1.0 I(TRM) Max. (A)40 @ t(w) (s) (Test Condition)320u I(TSM) Max. (A)30 @ t(w) (s)10m V(R) Max. (V)228 I(H) Max. (A) Holding Current150m V(TM) Max. (V)2.5

Contextual Info: BR213-280 Thyristors Dual Bidirectional Breakover Diode V BO Min. (V) V(BO) Max. (V)314 I(S) Max. (A)1.0 I(TRM) Max. (A)40 @ t(w) (s) (Test Condition)320u I(TSM) Max. (A)30 @ t(w) (s)10m V(R) Max. (V)246 I(H) Max. (A) Holding Current150m V(TM) Max. (V)2.5

breakover device

Abstract: BR213
Contextual Info: DEVELO PM ENT DATA BR213 SERIES T h is d ata sheet c o n ta in s a dva nce in fo r m a t io n and sp e c ific a tio n s are sub ject to ch a n g e w it h o u t notice. y \ _ DUAL BREAKOVER DIODES A range of m on olithic dual bidirectional breakover diodes w ith ±12% tolerance o f breakover voltage.

Contextual Info: 25E J> • bb 53 1 3 1 0 0 2 2 2 ^ 5 3 ■ DEVELOPMENT DATA BR213 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. J K N AMER PH ILI PS /D IS CR ET E T ^2S ^< D S - DUAL BREAKOVER DIODES A range of monolithic dual bidirectional breakover diodes w ith ±12% tolerance of breakover voltage.

breakover device

Contextual Info: 25E D • bb53T31 0[]222b5 3 ■ U h V E L Q P M E N T DATA BR213 SERIES T h is d a ta sheat c o n ta in s advance in fo r m a tio n and s p e c ific a tio n s are s u b je c t to change w it h o u t n o tic e . 7~2S ^<D S - - N ANER P H I L I P S / D I S C R E T E

breakover device

Contextual Info: SbE D • IPHIN 711 D Ö 2 b G041i07D 753 DEVELO PM ENT DATA BR213 SERIES T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. PHILIPS 5bE ]> INTERNATIONAL DUAL BREAKOVER DIODES A range o f m onolithic duai bidirectional breakover diodes w ith ±12% tolerance o f breakover voltage.

pby 345

Abstract: BYW93 pbyr BYX56 56360A BYW31
Contextual Info: INDEX _y v. Type No. Page 43 55 65 69 81 BYV92 series B Y V 1 18 series BYV118F series B Y V 120 series BYV121 series 461 469 479 483 491 BY229 series BY229F series BY249 series BY249F series BY329 series 93 105 117 123 131 BYV133 series BYV133F series BYV143 series

Contextual Info: N AUER PHILIPS/DISCRETE 55E D • bhS3T31 QQlbaQ? 3 ■ Power Devices BREAKOVER DIODES TYPE NO. PACKAGE OUTLINE BREAKOVER VOLTAGE ±12% . TRANSIENT ' PEAK CURRENT HOLDING CURRENT It r m 8/20/rS | 10/700/rS itt 25°C SWITCHING CURRENT la 25°C dv/dt i ON-STATE

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

BR220 160

Abstract: 10A 140V DIODE BR210-120 BR213-120 BR216-78 BR220-120 BR210 AT5A
Contextual Info: N AMER PHILIPS/DISCRETE SSE J> • 1^53131 OOlbEQ? 3 ■ Power Devices BREAKOVER DIODES TYPE NO. PACKAGE OUTLINE BREAKOVER VOLTAGE ±12% - TRANSIENT V PEAK CURRENT Itrm 8/20/jS I 10/700/18 HOLDING CURRENT fH 25°C SWITCHING CURRENT I* 25°C . dv/dt i ON-STATE