K20X60U Search Results

TK20X60U

Contextual Info: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)

Contextual Info: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.175 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)

TK20X60U

Contextual Info: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)

Contextual Info: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.175 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)

TK20X60U

Abstract: K20X60U
Contextual Info: K20X60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K20X60U ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)

Contextual Info: K20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.175 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)