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    K23 MOSFET Search Results

    K23 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    K23 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = +25°C • Low Gate Threshold Voltage  Low Input Capacitance 100V 6.0Ω @ VGS = 10V 0.17  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating


    Original     		PDF BSS123 AEC-Q101 DS30366

    Untitled

    Abstract: No abstract text available
    Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Lead Free/RoHS Compliant Note 1


    Original     		PDF BSS123W AEC-Q101 OT323 J-STD-020 MIL-STD-202, DS30368

    K23 mOSFET

    Abstract: BSS123W BSS123W-7-F
    Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Lead Free/RoHS Compliant Note 1


    Original     		PDF BSS123W AEC-Q101 OT323 J-STD-020 MIL-STD-202, DS30368 K23 mOSFET BSS123W BSS123W-7-F

    Untitled

    Abstract: No abstract text available
    Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data •     Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating    Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


    Original     		PDF BSS123W OT323 J-STD-020 MIL-STD-202, DS30368

    K23 mOSFET

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating


    Original     		PDF BSS123 DS30366 K23 mOSFET

    K23 mOSFET

    Abstract: K23 mOSFET DIAGRAM DS30366
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating


    Original     		PDF BSS123 DS30366 K23 mOSFET K23 mOSFET DIAGRAM

    K23 SOT23 MARKING

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating


    Original     		PDF BSS123 DS30366 K23 SOT23 MARKING

    Untitled

    Abstract: No abstract text available
    Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID TA = +25°C 170mA making it ideal for high efficiency power management applications. • • • • • • • • Applications Mechanical Data • • • • • V BR DSS RDS(ON) 100V


    Original     		PDF BSS123W 170mA DS30368

    Untitled

    Abstract: No abstract text available
    Text: BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 100V 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance,


    Original     		PDF BSS123W 170mA AEC-Q101 DS30368

    BSS123Q-13

    Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating


    Original     		PDF BSS123 DS30366 BSS123Q-13 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7

    Untitled

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating


    Original     		PDF BSS123 DS30366

    kingston ddr2 memory schematic

    Abstract: MDLS-20265 LCM-S01602 lcm-s02402 KVR667D2S5 crucial 512mb sodimm Vishay SOT23 MARKING G7 MDLS-20189 OPTREX C-51505 MDLS-24265
    Text: LatticeECP2 Advanced Evaluation Board User’s Guide January 2009 Revision: EB23_01.6 LatticeECP2 Advanced Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeECP2 Advanced Evaluation Board provides a convenient platform to evaluate, test and debug user


    Original     		PDF LatticeECP2-50 672-ball 64-bit kingston ddr2 memory schematic MDLS-20265 LCM-S01602 lcm-s02402 KVR667D2S5 crucial 512mb sodimm Vishay SOT23 MARKING G7 MDLS-20189 OPTREX C-51505 MDLS-24265

    intel g41 crb

    Abstract: AJ33 AJ34 AJ35 AJ36 AJ37 AJ38 AJ39 AJ40 AJ41 AJ42 schematic intel g41 g31 crb socket am3 pinout g41 crb MOSFET BA7 intel G41 MOTHERBOARD crb LGA1366 ISL6334EVAL1Z
    Text: Technical Brief 486 ISL6334EVAL1Z User Guide Board Specifications 1. Intel VR11.1 compliant. 2. 4-Phase, 130W, 400kHz, Load Line = 0.8mΩ. 3. Socket: LGA1366, die sensing, can be configured for motherboard sensing. 4. 6 Layer Board: Top/Bottom - 0.5oz plated, 1.5oz


    Original     		PDF ISL6334EVAL1Z 400kHz, LGA1366, ISL6612A, ISL6622) ISL6596/ISL6620) TB486 intel g41 crb AJ33 AJ34 AJ35 AJ36 AJ37 AJ38 AJ39 AJ40 AJ41 AJ42 schematic intel g41 g31 crb socket am3 pinout g41 crb MOSFET BA7 intel G41 MOTHERBOARD crb LGA1366

    ALC 655

    Abstract: RTL8101L W83L517 W83L950 BE220 MOSFET A13 MOSFET B20 p03 RTL8101bl
    Text: 5 4 3 2 1 SOCKET 479 Banias 478 uFCPGA MS1003 BLOCK DIAGRAM PAGE 3,4,5 D D HOST BUS 100MHZ 4X NORTH BRIDGE CRT DISPLAY PAGE 18 SYS POWER DDR DRAM 100/133MHZ 1X Odem MCH-M LCD DISPLAY VGA PAGE 19 PAGE 6,7,8 M10-P PAGE 14,15,16 LINEAR REGULATOR VCCP VCCA VCC_MCH


    Original     		PDF MS1003 100MHZ 66MHz 100/133MHZ M10-P 66MHZ MAX1907 SC1486 MAX1999 SG4Mx32 ALC 655 RTL8101L W83L517 W83L950 BE220 MOSFET A13 MOSFET B20 p03 RTL8101bl

    WPC775L

    Abstract: G5281RC1U-GP TPS51125 SCD22U6D3V2KX-1GP SNLVC1G08DCKRG4-GP 750R2F-GP 51125 htc one x SCD1U16V2KX-3GP wistron
    Text: 5 4 3 2 S13 Block Diagram DDRII Slot 0 8 667/800 DDRII 667/800 MHz Channel A DDRII Slot 1 9 667/800 DDRII 667/800 MHz Channel B 1 CPU V_CORE Project code PCB Number Revision Thermal & Fan G792 21 AMD S1G2 CPU : 91.4H801.001 : 48.4H801.0SB : SB INPUTS OUTPUTS


    Original     		PDF 638-Pin 4H801 ISL6265 TPS51124 ICS9LPR480 16X16 RS780M TPS51125 RS780M WPC775L G5281RC1U-GP TPS51125 SCD22U6D3V2KX-1GP SNLVC1G08DCKRG4-GP 750R2F-GP 51125 htc one x SCD1U16V2KX-3GP wistron

    LC1 D12 P7

    Abstract: APL1805 P55 MOSFET which is used in inverter s3ct C540 DIODE u3037 MLT 22 MOSFET AUDIO AMPLIFIER LC1 D18 P7 fet B20 p03 CDL 0844 diode S4 68a
    Text: A B C Switching Power Max1907AETL 32 INPUTS OUTPUT DCBATOUT VCC_CORE CPU PIV Banias ULV/LV 900MHz/1GHz CLOCK Generator 1.2/1.05V DC/DC TPS5110 INPUTS 4,5 HOST BUS 400MHz CRT 1D2V_S0 DDR DRAM Socket *2 1D05V_S0 DC/DC&CHARGER DDR 266 6,7,8 9,10,11 36 13 HDD


    Original     		PDF Max1907AETL ICS950813CG 900MHz/1GHz TPS5110 400MHz Max1645 R5C551 DMA-100 TPS5130 82562ET LC1 D12 P7 APL1805 P55 MOSFET which is used in inverter s3ct C540 DIODE u3037 MLT 22 MOSFET AUDIO AMPLIFIER LC1 D18 P7 fet B20 p03 CDL 0844 diode S4 68a

    W83L950

    Abstract: ragpc W83L517 855PM-MCH J12D1 fds66794 10kf12 TP4666 MAX1907 25VPW
    Text: 5 4 3 2 1 SOCKET 479 Banias 478 uFCPGA MS1003 BLOCK DIAGRAM PAGE 3,4,5 D D HOST BUS 100MHZ 4X NORTH BRIDGE CRT DISPLAY PAGE 18 SYS POWER DDR DRAM 100/133MHZ 1X Odem MCH-M LCD DISPLAY VGA PAGE 19 PAGE 6,7,8 M10-P PAGE 14,15,16 REGULAR VCCP VCCA VCC_MCH VCC FOR M10P


    Original     		PDF MS1003 100MHZ 66MHz 100/133MHZ M10-P 66MHZ MAX1907 SC1486 MAX1999 SG4Mx32 W83L950 ragpc W83L517 855PM-MCH J12D1 fds66794 10kf12 TP4666 MAX1907 25VPW

    diode in48

    Abstract: IN58 diode SN105125
    Text: User's Guide SBAU186 – March 2011 DDC264EVM User's Guide DDC264EVM This user's guide describes the characteristics, operation, and use of the DDC264EVM. This evaluation module EVM is an evaluation kit for evaluating the DDC264, a 64-channel, current input, 20-bit


    Original     		PDF SBAU186 DDC264EVM DDC264EVM DDC264EVM. DDC264, 64-channel, 20-bit DDC264 DDC264EVMm diode in48 IN58 diode SN105125

    diode C531

    Abstract: c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504
    Text: NCP5318DEMO NCP5318 Four Phase Demonstration Board Note Switching Regulator Controller http://onsemi.com DEMONSTRATION NOTE Features Protection Features • Programmable 2/3/4 Phase Operation • Lossless Current Sensing • Enhanced V2 Control Method Provides Fast Transient


    Original     		PDF NCP5318DEMO NCP5318 NCP5318DEMO/D diode C531 c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504

    csc-b1

    Abstract: csc-b1 transformer csc-b1 transformer diagram MS1020 W83L517 W83L950 R2643 M2K5 Socket AM2 R2617
    Text: 5 4 3 2 1 SOCKET 479 Banias 478 uFCPGA MS1020 BLOCK DIAGRAM PAGE 3,4,5 D D HOST BUS 100MHZ 4X NORTH BRIDGE CRT DISPLAY PAGE 18 SYS POWER DDR DRAM 100/133MHZ 1X Odem MCH-M LCD DISPLAY VGA PAGE 27 PAGE 6,7,8 M18 PAGE 15,16,19 REGULAR VCCP VCCA VCC_MCH VCC FOR M10P


    Original     		PDF MS1020 100MHZ 66MHz 100/133MHZ 66MHZ MAX1907 SC1486 MAX1999 128MB 32bit csc-b1 csc-b1 transformer csc-b1 transformer diagram W83L517 W83L950 R2643 M2K5 Socket AM2 R2617

    UP7711U8

    Abstract: RTM880T-792-LF max17480G rtl8112 UP7711 UP7714BMA5-00 RS780MN rtm880t G780P11U IT8752E
    Text: 5 4 3 2 1 K40AA SCHEMATIC R1.2 D D Content PAGE PAGE Content SYSTEM PAGE REF. C B A 3 4 5 6 7 8 9 10 11 12 13 14 15 20 21 22 23 24 25 29 30 31 32 33 34 35 36 37 38 40 41 42 43 44 45 46 48 50 51 52 53 56 57 58 60 61 62 63 65 66 69 70 71 72 73 74 75 76 77 SCHEMATIC INFORMATION


    Original     		PDF K40AA CLK-ICS9LPR363DGLF-T EC-IT8512 RTL8111C CODEC-ALC663 AMP-1431 UP7704U8 220mA/350mA 1UF/25V UP7711U8 RTM880T-792-LF max17480G rtl8112 UP7711 UP7714BMA5-00 RS780MN rtm880t G780P11U IT8752E

    Untitled

    Abstract: No abstract text available
    Text: International g K]Rectifier HEXFRED PD-2.375 Provisional Data Sheet HFA45HC120C ULTRA FAST, SOFT RECOVERY DIODE Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units 1200 V lF AV 28 A trr (per leg) 135 ns


    OCR Scan     		PDF HFA45HC120C 00A//1S, 00A/pS, TD-258AA

    Untitled

    Abstract: No abstract text available
    Text: 000 PWR-82331 and PWR-82333 ILC DATA DEVICE _ _ CORPORATION_ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PW R-82331 has a 200V rating and uses MOSFETs in the output stage while the


    OCR Scan     		PDF PWR-82331 PWR-82333 PWR-82333 R-82331 8233X PWR-82331/333

    TT 2188 transistor

    Abstract: 12w transistor 82331
    Text: QQB PWR-82331 and PWR-82333 ILC DATA DEVICE _ CORPORATIONS_ SMART POWER 3-PHASE MOTOR DRIVES ê: DESCRIPTION APPLICATIONS The PWR-82331 and PW R-82333 are 30 A 3-phase m otor drive hybrids. The PWR-82331 has a +200 V rating and uses M O SFETs in the output stage


    OCR Scan     		PDF PWR-82331 PWR-82333 R-82331/333 PWR-82333 TT 2188 transistor 12w transistor 82331