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    K337 Search Results

    K337 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3377(0)-ZK-E1-AY Renesas Electronics Corporation Nch Single Power Mosfet 60V 20A 44Mohm Visit Renesas Electronics Corporation
    2SK3377-Z-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3377(0)-Z-E2-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3377-Z-E2-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3377-Z-E1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    K337 Price and Stock

    Nextgen Components CA45C6R3K337TA

    CAP TANT 330UF 10% 6.3V 2312
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    DigiKey CA45C6R3K337TA Reel 359,772 500
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    Nextgen Components CA45D6R3K337TA

    CAP TANT 330UF 10% 6.3V 2917
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    DigiKey CA45D6R3K337TA Reel 309,545 500
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    Toshiba America Electronic Components SSM3K337R,LF

    MOSFET N-CH 38V 2A SOT23F
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    DigiKey SSM3K337R,LF Reel 9,000 3,000
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    SSM3K337R,LF Cut Tape 2,303 1
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    Mouser Electronics SSM3K337R,LF 29,434
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    Avnet Asia SSM3K337R,LF 24 Weeks 3,000
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    EBV Elektronik SSM3K337R,LF 25 Weeks 3,000
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    KEMET Corporation A750KK337M1CAAE014

    CAP ALUM POLY 330UF 20% 16V TH
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    DigiKey A750KK337M1CAAE014 Bulk 2,978 1
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    Newark A750KK337M1CAAE014 Bulk 508 10
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    RS A750KK337M1CAAE014 Bulk 5,000
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    TME A750KK337M1CAAE014 2
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    Chip 1 Exchange A750KK337M1CAAE014 2,860
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    Avnet Abacus A750KK337M1CAAE014 35 Weeks 5,000
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    Cornell Dubilier Electronics Inc AFK337M35G24VT-F

    CAP ALUM 330UF 20% 35V SMD
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    DigiKey AFK337M35G24VT-F Reel 1,500 500
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    AFK337M35G24VT-F Cut Tape 179 1
    • 1 $3.74
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    Richardson RFPD AFK337M35G24VT-F 500
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    K337 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3374

    Abstract: 2SK3374
    Text: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


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    PDF 2SK3374 k3374 2SK3374

    2SK3373

    Abstract: No abstract text available
    Text: K3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


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    PDF 2SK3373 2SK3373

    2SK3371

    Abstract: 53-common
    Text: K3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm 5.2 ± 0.2 Features 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


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    PDF 2SK3371 2SK3371 53-common

    B824 transistor

    Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
    Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information


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    PDF T110/T212 CSR13) MIL-PRF-39003/1 T111/T213 CSR91) MIL-PRF-39003/4 CSR09) MIL-PRF-39003/2 T140/T242 CSR23) B824 transistor a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor

    elko

    Abstract: B43502-D
    Text: Snap-in-Kondensatoren LL-Typ B 43 502 Hohe Brauchbarkeitsdauer Einsatz bis 85 ˚C Aufbau ● ● ● ● ● ● ● Schaltfest, gepolt Al-Gehäuse, voll isoliert Snap-in-Lötanschlüsse für Selbsthalterung Minuspolkennzeichnung auf Gehäuseoberfläche Minuspol nicht gegen Gehäuse isoliert


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    PDF B43502-D227-M B43502 F/400 elko B43502-D

    K3373

    Abstract: 2SK3373 toshiba marking code transistor
    Text: K3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)


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    PDF 2SK3373 K3373 2SK3373 toshiba marking code transistor

    k3374

    Abstract: 2SK3374
    Text: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •


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    PDF 2SK3374 k3374 2SK3374

    K3371

    Abstract: No abstract text available
    Text: K3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


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    PDF 2SK3371 SC-64 K3371

    2SK3371

    Abstract: No abstract text available
    Text: K3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


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    PDF 2SK3371 2SK3371

    transistor a564

    Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
    Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information


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    PDF T110/T212 CSR13) MIL-C-39003/1 T111/T213 CSR91) MIL-C-39003/4 CSR09) MIL-C-39003/2 T140/T242 CSR23) transistor a564 a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026

    2SK3373

    Abstract: K3373 k337
    Text: K3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)


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    PDF 2SK3373 2SK3373 K3373 k337

    cx 20015 a

    Abstract: dipped tantalum capacitor markings 335 35K CX02 capacitor B1253 J476 k337 T35X TANTALUM DIPPED / RADIAL - POLAR T368
    Text: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for


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    PDF C-7301 C-7301/7303 cx 20015 a dipped tantalum capacitor markings 335 35K CX02 capacitor B1253 J476 k337 T35X TANTALUM DIPPED / RADIAL - POLAR T368

    TANTALUM DIPPED / RADIAL - POLAR

    Abstract: T351-4C 2/48VDC
    Text: TANTALUM DIPPED / RADIAL - POLAR T350, T351, T352, T353, T354, T355 & T356 SERIES “ULTRADIP II” The KEMET ‘UltraDip II’ Capacitors offer the designer of quality instruments and entertainment systems the widely recognized advantages inherent in solid tantalum capacitors at competitive


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    K3371

    Abstract: 2SK3371 2SK3371,K3371
    Text: K3371 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOS V K3371 ○ スイッチングレギュレータ用 単位: mm 1.7 ± 0. 2 6.8 MAX. 5.2 ± 0. 2 0.95 MAX. 0.6 ± 0.15 絶対最大定格 (Ta = 25°C) 項 目 記 号 定


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    PDF 2SK3371 SC-64 K3371 2SK3371 2SK3371,K3371

    a564 transistor

    Abstract: a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K
    Text: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for


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    PDF C-7301 C-7301/7303 a564 transistor a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K

    a564 transistor

    Abstract: transistor a564 335 35K T35 diode A564 transistor datasheet B565 K186 F5653 A564 a684 transistor
    Text: KEMET TANTALUM DIPPED / RADIAL - POLAR T350, T351, T352, T353, T354, T355 & T356 SERIES “ULTRADIP II” The KEMET ‘UltraDip II’ Capacitors offer the designer of quality instruments and entertainment systems the widely recognized advantages inherent in solid tantalum capacitors at competitive


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    PDF 035AS a564 transistor transistor a564 335 35K T35 diode A564 transistor datasheet B565 K186 F5653 A564 a684 transistor

    Untitled

    Abstract: No abstract text available
    Text: K3373 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3373 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)


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    PDF 2SK3373

    K3371

    Abstract: No abstract text available
    Text: K3371 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


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    PDF 2SK3371 K3371

    TANTALUM capacitor 685 35K

    Abstract: 685 35K MIL-STD-127 T36X KEMET T355 capacitor a475 T350 f5653 RS-468 T35X
    Text: TANTALUM DIPPED / RADIAL — POLAR KEMET PERFORMANCE CHARACTERISTICS • CAPACITANCE/VOLTAGE RANGE: T35X/T39X: 0.1-680µF, 3-50 Volts. T36X: 0.1-330µF, 6-50 Volts. • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10%


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    PDF T35X/T39X: 035AS TANTALUM capacitor 685 35K 685 35K MIL-STD-127 T36X KEMET T355 capacitor a475 T350 f5653 RS-468 T35X

    a564 transistor

    Abstract: transistor a564 a684 transistor transistor a684 J476 series cx 20015 A564 transistor datasheet B565 A224 K277
    Text: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for


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    PDF

    K277

    Abstract: A475 k337 capacitor a475 D1863 a475 C K187 D336 E476 k227
    Text: KEMET TANTALUM DIPPED / RADIAL T368 SE R IE S ULTRADIP II' T368 CAPACITOR OUTLINE DRAWING C & D CASES T368 DIMENSIONS — INCHES + MILLIMETERS .100 MAX. (2.54) ,025±.002 (.64±.05) .187±.032 (4.75±.81) •250±.015 (6.351.38) CASE SIZE TMAX WMAX HMAX


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    PDF 120Hz T368C826 006AS T368C107 T368C127 T368C157 T368D187 K277 A475 k337 capacitor a475 D1863 a475 C K187 D336 E476 k227

    t3512

    Abstract: capacitor a475 T3B6 A475 k337 a475 C L337 A106 k227 a335
    Text: KE MET TANTALUM DIPPED I RADIAL Tnfifl SERIES U L1HAÜ IP II T368 C A P A C IT O R O U T LIN E DRAW ING C & D C A SES T368 D IM EN SIO N S — IN C H ES ♦ M IL L IM E T E R S .100 MAX. <2.54) oat. oo2 (Ä 4 L0 3 I >r 107t.O32 CASE SIZ E TIAAX WMAX HMAX


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    PDF T3680626 T368C 006AS T368C127 T368C157 T3880187Q T366D227 t3512 capacitor a475 T3B6 A475 k337 a475 C L337 A106 k227 a335

    DMK2307-000

    Abstract: DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226
    Text: EBAIphi GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low N oise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancem ent Mixers Passivated Planar Construction for Reliability Description A lpha’s series of gallium arsenide Schottky barrier


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    PDF AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AK006L1-00 AS004M2-08 DMK2307-000 DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226

    k2862

    Abstract: k3354
    Text: EBAlpha GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low Noise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancement Mixers X Passivated Planar Construction for Reliability Description Alpha’s series of gallium arsenide Schottky barrier


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    PDF