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    K3561 Price and Stock

    Fluke Corporation FLK-3561 FC 3YR

    Sensitivity:± 32G; Frequency Range:10Hz To 1Khz; Sampling Rate:25.6Khz; External Height - Metric:2.42Mm; External Width - Metric:0.95Mm; External Depth - Metric:-; Product Range:- Rohs Compliant: Yes |Fluke FLK-3561 FC 3YR
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    Newark FLK-3561 FC 3YR Bulk 1
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    Fluke Corporation FLK- 3561 FC KIT

    Sensitivity:± 32G; Frequency Range:10Hz To 1Khz; Sampling Rate:25.6Khz; External Height - Metric:2.42Mm; External Width - Metric:0.95Mm; External Depth - Metric:-; Product Range:- Rohs Compliant: Yes |Fluke FLK- 3561 FC KIT
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    Newark FLK- 3561 FC KIT Bulk 1
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    Fluke Corporation FLK-3561/3502 FC

    Sensitivity:± 32G; Frequency Range:10Hz To 1Khz; Sampling Rate:25.6Khz; External Height - Metric:2.42Mm; External Width - Metric:0.95Mm; External Depth - Metric:-; Product Range:- Rohs Compliant: Yes |Fluke FLK-3561/3502 FC
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    Newark FLK-3561/3502 FC Bulk 1
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    Fluke Corporation FLK-3561/3502 FC 3YR

    Sensitivity:± 32G; Frequency Range:10Hz To 1Khz; Sampling Rate:25.6Khz; External Height - Metric:2.42Mm; External Width - Metric:0.95Mm; External Depth - Metric:-; Product Range:- Rohs Compliant: Yes |Fluke FLK-3561/3502 FC 3YR
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    Newark FLK-3561/3502 FC 3YR Bulk 1
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    Fluke Calibration FLK-3561 FC 3YR

    VIBRATION SENSOR 3YR Expansion Kit w/SW | Fluke FLK-3561 FC 3YR
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    RS FLK-3561 FC 3YR Bulk 1
    • 1 $1995.12
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    K3561 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3561

    Abstract: 2SK3561 K356
    Text: K3561 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3561 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.5 S (標準)


    Original     		PDF 2SK3561 SC-67 2-10U1B k3561 2SK3561 K356

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356
    Text: TENTATIVE K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ K3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		PDF 2SK3561 K3561 transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356

    transistor m1104

    Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182
    Text: Contents List of Ordering Codes 5 8 Multilayer Chip Capacitors 11 Multilayer Leaded Capacitors 57 General Technical Information Mounting Instructions for Chip Capacitors 75 88 Measuring and Test Conditions Quality Assurance 99 103 Taping and Packing 111 Symbols and Terms


    Original     		PDF filt05 transistor m1104 transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
    Text: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561

    transistor k2333

    Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392
    Text: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression


    Original     		PDF KKE0272-V 30-K5273-K01 -K5333-K01 -K5393-K01 -K5473-K01 B37931-K0472-K01 C/C25 transistor k2333 k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392

    Untitled

    Abstract: No abstract text available
    Text: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3561

    G1966M SAW FILTER

    Abstract: K9253M G1966M G1968M K3561M K9260M K2977M M1859M K2958M K6272K
    Text: SAW DEVICE SELECTION TABLE for Multimedia Applications TV, CATV, VCR, DVB, DAB, SAT Content IF Filters for Intercarrier Applications IF Filters for Quasi/Split Sound Applications IF Filters for Video Applications IF Filters for Audio Applications Bandpass Filters for Digital Cable Applications


    Original     		PDF K2953M K2958M K2959M K2963M G1966M SAW FILTER K9253M G1966M G1968M K3561M K9260M K2977M M1859M K2958M K6272K

    K3561

    Abstract: transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type
    Text: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3561 K3561 transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type

    k3332

    Abstract: k3562 k3102 k2333 k1271 k3272 K1124 K2182 k3561 K1153
    Text: Multilayer Chip Capacitors X7R Features • ■ ■ ■ High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength Applications ■ ■ ■ ■ Blocking Coupling Decoupling Interference suppression Terminations


    Original     		PDF

    K3561

    Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application
    Text: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3561 K3561 transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application

    K3561

    Abstract: transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet
    Text: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.)


    Original     		PDF 2SK3561 K3561 transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet

    K3561

    Abstract: transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561
    Text: K3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3561 K3561 transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561

    transistor k2333

    Abstract: k2333 k3562 k3332 transistor k2182 k2182 k3272 K3561 transistor k1102 K0392
    Text: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression


    Original     		PDF KKE0272-V B37872-K0224-K62 B37931; B37931-K5221-K60 B37931-K5331-K60 B37931-K5471-K60 B37931-K5681-K60 B37931-K5102-K60 B37931-K5152-K60 B37931-K5222-K60 transistor k2333 k2333 k3562 k3332 transistor k2182 k2182 k3272 K3561 transistor k1102 K0392

    23z9 tube

    Abstract: k3561 23z9 triode FU 50 k356 ScansU9X24
    Text: — PRODUCT INFORMATION — TUBES Page 1 Compactron Dissimilar-Double-Triode Pentode VERTICAL OSCILLATOR 140 VOLTS B+ VERTICAL OUTPUT PENTODE SYNC CLIPPER The 23Z9 is a compactron containing a medium-mu triode, a high-mu triode, and a highperveance beam pentode. The pentode is intended for vertical output service in monochrome


    OCR Scan     		PDF K-55611-TD24D-2 23z9 tube k3561 23z9 triode FU 50 k356 ScansU9X24