K3561 SILICON N CHANNEL MOS TYPE Search Results

K3561 SILICON N CHANNEL MOS TYPE Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
DE6B3KJ151KB4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ471KN4AE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6E3KJ222MA4B	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ101KN4AE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive

K3561 SILICON N CHANNEL MOS TYPE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K3561 Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356 Contextual Info: TENTATIVE 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage	Original	2SK3561 K3561 transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356	PDF
K3561 Abstract: transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3561 K3561 transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type	PDF
Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3561	PDF
K3561 Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561 Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561	PDF
K3561 Abstract: transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.)	Original	2SK3561 K3561 transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet	PDF
K3561 Abstract: transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561 Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3561 K3561 transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561	PDF
K3561 Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.)	Original	2SK3561 K3561 transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application	PDF