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    K3880 Price and Stock

    Henkel Corporation / Loctite LOCTITE ABLESTIK 3880 5CC

    Loctite Ablestik 3880 |Loctite LOCTITE ABLESTIK 3880 5CC
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    Newark LOCTITE ABLESTIK 3880 5CC Bulk 10
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    Thomson Components-Mostek Corp MK3880N

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    Bristol Electronics MK3880N 40
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    Thomson Components-Mostek Corp MK3880P-4

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    Bristol Electronics MK3880P-4 14
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    MK3880P-4 1
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    Vishay Intertechnologies CRCW060337K4FKEA

    Thick Film Resistors - SMD 1/10watt 37.4Kohms1% 1%
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    TTI CRCW060337K4FKEA Reel 110,000 5,000
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    Amphenol Corporation 91-565834-19P

    Circular MIL Spec Connector TV 19C 19#20 PIN RECP NI
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    TTI 91-565834-19P Each 2,175 1
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    K3880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk3880

    Abstract: No abstract text available
    Text: K3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV K3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 2sk3880

    membrane switch

    Abstract: mw 137 k276 BMW ABS countersunk screw membrane key sm phillips K2750
    Text: NEXT FIND IT Keyboard enclosures are ergonomically designed and available in a wide range of styles and sizes. You may choose from types with standard or slanted designs, as well as from types that have membrane switches, cutouts for ribbon cables and 9V battery


    Original     		PDF K4-550SM K4-660SM K4-770SM K4-550SMW K4-660SMW K4-770SMW membrane switch mw 137 k276 BMW ABS countersunk screw membrane key sm phillips K2750

    K3880

    Abstract: toshiba K3880
    Text: K3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 K3880 toshiba K3880

    l9938

    Abstract: K9950 h9940 l9923 L9939 l9940 z9936 z9939 l9934 PQFP208 drawing
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 2000 TABLE OF CONTENTS Section I: Introduction Section II:


    Original     		PDF H73235 H73622 H73101 T13716 H74016G 79RV364Y 71V432VF 70V9289Y 723631Z 70914Y l9938 K9950 h9940 l9923 L9939 l9940 z9936 z9939 l9934 PQFP208 drawing

    h9910

    Abstract: K9930 L9938 PB44 L9939 h9940 L9924 Z178 K2837 K3296
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 2000 TABLE OF CONTENTS Section I: Introduction Section II:


    Original     		PDF T13351H H67541 72V841W H67444 71V124N B11539 71V016N H67495 62373L A20338G h9910 K9930 L9938 PB44 L9939 h9940 L9924 Z178 K2837 K3296

    K3880

    Abstract: 2SK3880 toshiba K3880
    Text: K3880 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3880 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.2S (標準)


    Original     		PDF 2SK3880 10VID 2-16F1B K3880 2SK3880 toshiba K3880

    K3880

    Abstract: 2SK3880 diode marking 1200
    Text: K3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 K3880 2SK3880 diode marking 1200

    h9910

    Abstract: h9940 L9939 z9939 l9923 hyundai 9734 ram K9930 l9934 733W K2837
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS January 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT January 2000 TABLE OF CONTENTS Section I: Introduction Section II:


    Original     		PDF PN100 PN120 72V3670Z 70V261Z 723631Z Y12526 H64413 Y12663G 7130S 71215Y h9910 h9940 L9939 z9939 l9923 hyundai 9734 ram K9930 l9934 733W K2837

    L9939

    Abstract: h9940 z9939 l9940 k9920 z9936 l9938 P9924 K9932 L9923
    Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS July 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 2000 TABLE OF CONTENTS Section I: Introduction Section II:


    Original     		PDF 70V9269Z 70261Z 2841W 2211W T13506 H69725 H69754 T13531 71V016K 71256TT L9939 h9940 z9939 l9940 k9920 z9936 l9938 P9924 K9932 L9923

    K3880

    Abstract: 2SK3880 toshiba K3880
    Text: K3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 K3880 2SK3880 toshiba K3880

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF

    k3880

    Abstract: No abstract text available
    Text: K3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 k3880

    K3880

    Abstract: 2SK3880
    Text: K3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 K3880 2SK3880

    Untitled

    Abstract: No abstract text available
    Text: K3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880

    MK3881

    Abstract: mk3882 MK3887 z80b mostek microcomputer Z80 Mostek 3870 MK3870/40
    Text: MICROCOMPUTER SYSTEMS DATA BOOK <» MOSTEK Copyright 1 9 8 0 M ostek Corporation A ll rights reserved Trade Marks Registered Mostek reserves the right to make changes in specifications at any time and without notice. The information furnished by Mostek in this publication is believed to be accurate and reliable. However, no responsibility is


    OCR Scan     		PDF

    2516 2k eprom

    Abstract: MK37000-5 2764 EPROM specification MOSTEK 2716 MOSTEK ROM eprom 2516 Mostek MK3880 32x8 EPROM MK3880 mostek mk37000
    Text: MOSTEK. •UIÜDINÆ 64K-BIT MOS READ-ONLY MEMORY MK37000 P/J/NJ-5 FEATURES □ Organization: 8K x 8 Bit ROM - JEDEC Pinout □ Mask ROM replacement for M K2764 EPROM □ Pin compatible with Mostek's BYTiEWYDE Memory Family □ No Connections allow easy upgrade to future


    OCR Scan     		PDF 64K-BIT MK37000 MK2764 MK37000-5 300ns 450ns MK37000 MK276 2516 2k eprom 2764 EPROM specification MOSTEK 2716 MOSTEK ROM eprom 2516 Mostek MK3880 32x8 EPROM MK3880 mostek mk37000

    MK3882

    Abstract: MK3870/20 siemens semiconductor manual mostek microcomputer Mostek 3870 AIM shugart mostek Am9511 MK3884 MOSTEK MEMORY MK36000
    Text: MICROCOMPUTER SYSTEMS DATA BOOK MOSTEK Copyright 1980 Mostek Corporation All rights reserved Trade Marks Registered Mostek reserves the right to make changes in specifications at any time and without notice. The information furnished by Mostek in this publication is believed to be accurate and reliable. However, no responsibility is


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643