K4026
Contextual Info: K4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K4026 Switching Regulator Applications 1.5 ± 0.2 Unit: mm Features 1.6 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)
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k4026
Abstract: 2SK4026
Contextual Info: K4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ Features １． ６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)
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K4026
Abstract: 2SK4026
Contextual Info: K4026 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOS V K4026 ○ スイッチングレギュレータ用 1.5 ± 0.2 単位: mm オン抵抗が低い。 : RDS (ON) = 6.4 Ω (標準) • 順方向伝達アドミタンスが高い。
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2SK4026
K4026
2SK4026
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K4026
Abstract: 2SK4026
Contextual Info: K4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K4026 Switching Regulator Applications 1.5 ± 0.2 Unit: mm Features 1.6 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)
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2SK4026
K4026
2SK4026
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PDF
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K4026
Abstract: 2SK4026
Contextual Info: K4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ Features １．６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)
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Original
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2SK4026
K4026
2SK4026
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PDF
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K4026
Abstract: 2SK4026
Contextual Info: K4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V K4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ １．６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)
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Original
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2SK4026
K4026
2SK4026
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