K4101 Search Results

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
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K4101

Abstract: equivalent transistor for K4101 2SK4101LS K4101 equivalents
Contextual Info: K4101LS Ordering number : ENA0745 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET K4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

mcc 90-12

Abstract: MCC 90-16 mcc 250 thyristor abb mcc 90-12 ABB thyristor modules MCC 65 ABB mcc MCC 90-06 io 8 Thyristor mcc mcc 90-08 ABB thyristor modules
Contextual Info: A S E A BROUN/ABB SEMICON Netz-Thyristor-Module aJ- F | 00Mfl30fl ouuuiiii i l ] Phase control Thyristor-Modules T - 2 5 - 2 3 EE! Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: K4101LS Ordering number : ENA0745A N-Channel Silicon MOSFET K4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

K4101

Abstract: equivalent transistor for K4101 a1366 2SK4101FS K4101 equivalents ENA1366 k4101 mosfet equivalent transistor for N2608QB 2SK4101
Contextual Info: K4101FS Ordering number : ENA1366 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET K4101FS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

5516 DIODE

Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

k4101

Abstract: 2SK4101LS equivalent transistor for K4101 2SK410 2SK4101 K4101 equivalents
Contextual Info: K4101LS Ordering number : ENA0745A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET K4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

mcc 55-12

Abstract: mcc 40-12 MCC 65-16 ABB mcc mcc 65-12 MCC 55-08 mcc 55-16 MCC 40 -14io8 ABB mcc 40-12 MCC 40 -12io8
Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-Module D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

W3100

Abstract: DIODE REDRESSEMENT T-25-23 ABB thyristor modules k4101 K21-0120A Diodes de redressement
Contextual Info: A S E A BROUN/ABB “ñ3 SEMICON Netz-Thyristor-Diode-Module iT | □□4ñ30ñ □□□Dns 2 1 ~ -^ -_ 2 5 -2 3 Phase control Thyristor-Diode-Modules D aten pro D iode Oder T h y ris to r/d a ta p e r d io d e o r th y r is to r /ie s ca racté ristiq u es se ra p p o rte n t à 1 d io d e ou à 1 th y ris to r

K4101

Abstract: 2SK4101LS 2SK4101 k4101 mosfet N0707 IT12223 IT12227
Contextual Info: K4101LS 注文コード No. N A 0 7 4 5 B 三洋半導体データシート 半導体データシート No.NA0745A をさしかえてください。 K4101LS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

2SK4101

Abstract: K4101 K4101FS 2SK4101FS a1366 K410 N2608QB
Contextual Info: K4101FS Ordering number : ENA1366A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET K4101FS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee.

K4101

Abstract: A1365 2SK4101FG equivalent transistor for K4101 k-410 7529 K4101 equivalents N2608QB 2sk4101
Contextual Info: K4101FG Ordering number : ENA1365 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET K4101FG General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

25-12io8

Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

k4150

Contextual Info: K41 TYPE -40°C +85°C 15000H • Surge-proof capacitor in aluminium can with insulation sleeve. • To be mounted with ring clips or with threaded stud. • Design optimized for long term vibration stress, traction market. • Octagonal can shape. APPLICATIONS