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    2SK410 Price and Stock

    Rochester Electronics LLC 2SK4100LS

    N-CHANNEL SILICON MOSFET
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    DigiKey 2SK4100LS Bulk 683
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    Rochester Electronics LLC 2SK4101FS

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK4101FS Bulk 567
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    Rochester Electronics LLC 2SK4101FS-V-H

    NCH 10V DRIVE SERIES
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    DigiKey 2SK4101FS-V-H Bulk 188
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    Rochester Electronics LLC 2SK4100LS-T-MG5

    SWITCHING DEVICE
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    DigiKey 2SK4100LS-T-MG5 Bulk 204
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    onsemi 2SK4101FS

    2SK4101FS
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    Verical 2SK4101FS 811,218 655
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    Rochester Electronics 2SK4101FS 811,218 1
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    Find more 2SK410 price and stock on Findchips.com

    2SK410 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK410 Advanced Semiconductor Transistor Original PDF
    2SK410 Hitachi Semiconductor V(dss): 180V V(gss): ±20V 8A 120W silicon N-channel MOS FET. For HF/VHF amplifier Original PDF
    2SK410 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK410 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK410 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK410 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK410 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK410 Unknown FET Data Book Scan PDF
    2SK410 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK4100LS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF
    2SK4101LS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF
    2SK4107 Toshiba Switching Regulator Applications Original PDF
    2SK4108 Toshiba Silicon N-Channel MOS Type Switching Regulator Applications Original PDF

    2SK410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK4105

    Abstract: K4105 2SK41 K-410
    Text: 2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4105 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK4105 SC-67 2-10R1B 2SK4105 K4105 2SK41 K-410

    2SK4103

    Abstract: 2SK41 MOSFET 500V 5A
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4103 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V


    Original     		PDF 2SK4103 2SK4103 16-Apr-09 2SK41 MOSFET 500V 5A

    toshiba k4108

    Abstract: k4108 2SK4108 toshiba 2sk4108 SC-65
    Text: 2SK4108 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK4108 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 14 S (標準)


    Original     		PDF 2SK4108 SC-65 2-16C1B toshiba k4108 k4108 2SK4108 toshiba 2sk4108 SC-65

    toshiba k4108

    Abstract: k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108
    Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Unit: mm Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK4108 150lled toshiba k4108 k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108

    2SK4103

    Abstract: K4103
    Text: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		PDF 2SK4103 2SK4103 K4103

    K4103

    Abstract: 2SK4103
    Text: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		PDF 2SK4103 K4103 2SK4103

    2sk410

    Abstract: Hitachi DSA00382
    Text: 2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry


    Original     		PDF 2SK410 2sk410 Hitachi DSA00382

    K4101

    Abstract: equivalent transistor for K4101 2SK4101LS K4101 equivalents
    Text: 2SK4101LS Ordering number : ENA0745 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .


    Original     		PDF 2SK4101LS ENA0745 A0745-5/5 K4101 equivalent transistor for K4101 2SK4101LS K4101 equivalents

    K4103

    Abstract: 2SK4103 2SK4103,K4103
    Text: 2SK4103 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK4103 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 5.2 ± 0. 2 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)


    Original     		PDF 2SK4103 K4103 2SK4103 2SK4103,K4103

    K4100

    Abstract: 2SK4100ls 2sk4100 transistor k4100 mosfet k4100 K4100 DATASHEET DSA0028595
    Text: 2SK4100LS Ordering number : ENA0778 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4100LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF 2SK4100LS ENA0778 A0778-5/5 K4100 2SK4100ls 2sk4100 transistor k4100 mosfet k4100 K4100 DATASHEET DSA0028595

    2SK4105

    Abstract: Power MOSFET, toshiba TO220-NIS
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4105 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V


    Original     		PDF 2SK4105 O-220NIS 2SK4105 16-Apr-09 Power MOSFET, toshiba TO220-NIS

    Untitled

    Abstract: No abstract text available
    Text: 2SK4101LS Ordering number : ENA0745A N-Channel Silicon MOSFET 2SK4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .


    Original     		PDF 2SK4101LS ENA0745A 2SK4101LS/D

    toshiba k4108

    Abstract: K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410
    Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current


    Original     		PDF 2SK4108 toshiba k4108 K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410

    K4103

    Abstract: 2SK4103 TOSHIBA 2SK4103 toshiba marking code transistor 2SK4103 equivalent marking code c 9 toshiba
    Text: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK4103 K4103 2SK4103 TOSHIBA 2SK4103 toshiba marking code transistor 2SK4103 equivalent marking code c 9 toshiba

    Untitled

    Abstract: No abstract text available
    Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)


    Original     		PDF 2SK4107

    k4101

    Abstract: 2SK4101LS equivalent transistor for K4101 2SK410 2SK4101 K4101 equivalents
    Text: 2SK4101LS Ordering number : ENA0745A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .


    Original     		PDF 2SK4101LS ENA0745A A0745-5/5 k4101 2SK4101LS equivalent transistor for K4101 2SK410 2SK4101 K4101 equivalents

    U 318 m

    Abstract: No abstract text available
    Text: 2SK410 SILICON N-CHANNEL MOS FET PACKAGE STYLE .500 6L FLG DESCRIPTION: A C 1 3 The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications. 2x Ø N FU LL R D 2 B FEATURES: .725/18,42 F G • PG = 17 dB typ. at 100 W/28 MHz


    Original     		PDF 2SK410 2SK410 U 318 m

    k4107

    Abstract: toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107
    Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)


    Original     		PDF 2SK4107 k4107 toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107

    K4101

    Abstract: 2SK4101LS 2SK4101 k4101 mosfet N0707 IT12223 IT12227
    Text: 2SK4101LS 注文コード No. N A 0 7 4 5 B 三洋半導体データシート 半導体データシート No.NA0745A をさしかえてください。 2SK4101LS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


    Original     		PDF 2SK4101LS NA0745A K4101 N0707 IT12224 IT12225 IT12226 IT12227 IT10478 K4101 2SK4101LS 2SK4101 k4101 mosfet IT12223 IT12227

    2SK4106

    Abstract: TO220-NIS package
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4106 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V


    Original     		PDF 2SK4106 O-220NIS 2SK4106 16-Apr-09 TO220-NIS package

    2SK425

    Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418


    Original     		PDF 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK425 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433

    2SK4101

    Abstract: K4101 K4101FS 2SK4101FS a1366 K410 N2608QB
    Text: 2SK4101FS Ordering number : ENA1366A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101FS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee.


    Original     		PDF 2SK4101FS ENA1366A PW10s, A1366-5/5 2SK4101 K4101 K4101FS 2SK4101FS a1366 K410 N2608QB

    K4101

    Abstract: A1365 2SK4101FG equivalent transistor for K4101 k-410 7529 K4101 equivalents N2608QB 2sk4101
    Text: 2SK4101FG Ordering number : ENA1365 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101FG General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF 2SK4101FG ENA1365 A1365-6/6 K4101 A1365 2SK4101FG equivalent transistor for K4101 k-410 7529 K4101 equivalents N2608QB 2sk4101

    2SK425

    Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
    Text: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL


    OCR Scan     		PDF 2SK406 2SK407 2SK408 2SK409 2SK410 2SK531 2SK421 2SK422 2SK423 2SK424 2SK425 2sk423 2SK424 2SK530 2SK422 2SK426 2SK425-13 2SK428 2SK433