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    K4175 Search Results

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    K4175 Price and Stock

    ebm-papst R3G250AK4175

    EC BACKWARD-CURVED MOTORIZED IMP
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    Vishay Intertechnologies CRCW1210267RFKEA

    Thick Film Resistors - SMD 1/2watt 267ohms 1%
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    TTI CRCW1210267RFKEA Reel 5,000 5,000
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    K4175 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4175

    Abstract: KGL4175HW
    Text: 1Electronic Components GTD-18609 Rev. 1.1 Preliminary KGL4175HW September 9, 2002 10.7 Gbps Direct Modulation Driver IC FEATURES • Low Power • High Sensitive Input • Modulation Current Control • Bias Current Control • X-Point Controllability : 0.6 W excluding modulation current and bias current


    Original     		PDF GTD-18609 KGL4175HW K4175 KGL4175HW

    K4175

    Abstract: K417 JW Electronic Systems
    Text: ODHKGL4175JW-01 Electronic Components KGL4175JW September 2, 2002 Preliminary 10.7 Gbps Direct Modulation Driver IC FEATURES • Low Power • High Sensitive Input • Modulation Current Control • Bias Current Control • X-Point Controllability • Surface Mount Type PKG


    Original     		PDF KGL4175JW ODHKGL4175JW-01 K4175 K417 JW Electronic Systems

    K4175

    Abstract: laser diode chip for 10GbE GTD18810 KGL4175JW STM-64 k417
    Text: ODHKGL4175JW-02 Electronic Components KGL4175JW Issue Date:Oct 20, 2004 10.7 Gbps Direct Modulatin LASER Driver IC FEATURES • Low Power : 0.6 W excluding modulation current and bias current High Sensitive Input : 0.25 Vpp (differential) Modulation Current Control : 20 mApp to 50 mApp


    Original     		PDF ODHKGL4175JW-02 KGL4175JW OC-192 STM-64 10GBE KGL4175JW 10GBE K4175 laser diode chip for 10GbE GTD18810 k417

    K4175

    Abstract: KGL4175JW
    Text: 1Electronic Components GTD-18607 Rev. 1.0 Preliminary KGL4175JW September 2, 2002 10.7 Gbps Direct Modulation Driver IC FEATURES • • • • • • Low Power High Sensitive Input Modulation Current Control Bias Current Control X-Point Controllability


    Original     		PDF GTD-18607 KGL4175JW K4175 KGL4175JW

    K4175

    Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor
    Text: PH ILIP S I NTE RN ATI ON AL bSE D H 7 1 1 0 6 2 b 00b3flfib T5^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in IS O T O P envelope. The device is intended for use in


    OCR Scan     		PDF 711DflSb BUK417-500AE/BE OT227B BUK417 -500AE -500BE BUK417-500AE K4175 BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor