K4E160411 Search Results

K4E160412C

Contextual Info: K4E170411C, K4E160411C K4E170412C, K4E160412C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K

K4E160411D

Abstract: K4E160411D-B K4E160412D K4E160412D-B K4E170411D K4E170411D-B K4E170412D K4E170412D-B 304X4
Contextual Info: K4E170411D, K4E160411D K4E170412D, K4E160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

4Mx32bits

Contextual Info: M53230400CW0/CB0 M53230410CW0/CB0 DRAM MODULE M53230400CW0/CB0 & M53230410CW0/CB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0C

Contextual Info: Preliminary M53640400DW0/DB0 M53640410DW0/DB0 DRAM MODULE M53640400DW0/DB0 & M53640410DW0/DB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0D is a 4Mx36bits Dynamic RAM

Contextual Info: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C

Contextual Info: Preliminary M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

Contextual Info: Preliminary M53230400DW0/DB0 M53230410DW0/DB0 DRAM MODULE M53230400DW0/DB0 & M53230410DW0/DB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D

Contextual Info: M53230400DW0/DB0 M53230410DW0/DB0 DRAM MODULE M53230400DW0/DB0 & M53230410DW0/DB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D

64mb edo dram simm

Abstract: K4E160411C
Contextual Info: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C

Contextual Info: M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

Contextual Info: M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 Fast Page Mode with EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

Contextual Info: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D

Contextual Info: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C

Contextual Info: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D

DQ9-DQ12

Contextual Info: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C