M5323080 Search Results

K4E641611C

Contextual Info: DRAM MODULE M53230804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230804CY0/CT0-C DRAM MODULE M53230804CY0/CT0-C

Contextual Info: Preliminary M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

Contextual Info: M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

Contextual Info: M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 Fast Page Mode with EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

Contextual Info: M53230800CW0/CB0 M53230810CW0/CB0 DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C

8Mx32 dram simm

Abstract: 8mx32 simm 72 pin
Contextual Info: DRAM MODULE M53230804BY0/BT0-C 4Byte 8Mx32 SIMM PDpin 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53230804BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.