K4H511638F
Abstract: K4H510838F DDR333 DDR400 DDR266
Text: K4H510838F K4H511638F Industrial DDR SDRAM 512Mb F-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4H510838F
K4H511638F
512Mb
K4H511638F
K4H510838F
DDR333
DDR400
DDR266
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DDR333
Abstract: DDR400 K4H510438F K4H510838F K4H511638F K4H510438F-H
Text: K4H510438F K4H510838F K4H511638F DDR SDRAM 512Mb F-die DDR SDRAM Specification 60 FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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PDF
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K4H510438F
K4H510838F
K4H511638F
512Mb
DDR333
DDR400
K4H510438F
K4H510838F
K4H511638F
K4H510438F-H
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K4H510438F
Abstract: K4H511638F-LC DDR266 DDR333 DDR400 K4H510838F K4H511638F samsung pinout 922
Text: K4H510438F K4H510838F K4H511638F DDR SDRAM 512Mb F-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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Original
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PDF
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K4H510438F
K4H510838F
K4H511638F
512Mb
K4H510438F
K4H511638F-LC
DDR266
DDR333
DDR400
K4H510838F
K4H511638F
samsung pinout 922
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K4H511638F
Abstract: K4H510438F K4H510838F DDR266 DDR333 DDR400 k4h511638f-hc
Text: K4H510438F K4H510838F K4H511638F DDR SDRAM 512Mb F-die DDR SDRAM Specification 60 FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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Original
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PDF
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K4H510438F
K4H510838F
K4H511638F
512Mb
K4H511638F
K4H510438F
K4H510838F
DDR266
DDR333
DDR400
k4h511638f-hc
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K4H511638F
Abstract: K4H510438F K4H510838F DDR266 DDR333 DDR400
Text: K4H510438F K4H510838F K4H511638F DDR SDRAM 512Mb F-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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Original
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PDF
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K4H510438F
K4H510838F
K4H511638F
512Mb
K4H511638F
K4H510438F
K4H510838F
DDR266
DDR333
DDR400
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M470L6524FL0
Abstract: M470L2923F60
Text: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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PDF
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512MB,
200pin
512Mb
64Mx8
sTSOPII-300mil
K4H510838F-6*
M470L6524FL0
M470L2923F60
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Untitled
Abstract: No abstract text available
Text: 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb F-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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PDF
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512MB,
184pin
512Mb
64/72-bit
64Mx8
K4H510838F-L*
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k4B2G1646
Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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M368L6523FLS-CCC
Abstract: M368L2923FLN-CCC M368L6523FLS k4h510838 M368L2923 DDR400 K4H510838F M368L2923FLN DDR333 samsung 512mb ddr cl3 184pin
Text: 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb F-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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Original
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PDF
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512MB,
184pin
512Mb
64/72-bit
64Mx8
K4H510838F-L*
M368L6523FLS-CCC
M368L2923FLN-CCC
M368L6523FLS
k4h510838
M368L2923
DDR400
K4H510838F
M368L2923FLN
DDR333
samsung 512mb ddr cl3 184pin
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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Untitled
Abstract: No abstract text available
Text: 512MB, 1GB, 2GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb F-die with 72-bit ECC 66 TSOP-II and 60 ball FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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Original
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PDF
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512MB,
184pin
512Mb
72-bit
256Mx72
M312L5720FH3)
128Mx4
K4H510438F-H*
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Untitled
Abstract: No abstract text available
Text: 512MB, 1GB Unbuffered SODIMM DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb F-die 66 TSOP-II & 54 sTSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
|
Original
|
PDF
|
512MB,
200pin
512Mb
64Mx8
sTSOPII-300mil
K4H510838F-6*
|
Untitled
Abstract: No abstract text available
Text: 512MB, 1GB, 2GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb F-die with 72-bit ECC 66 TSOP-II and 60 ball FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
|
Original
|
PDF
|
512MB,
184pin
512Mb
72-bit
256Mx72
M312L5720FH3)
128Mx4
K4H510438F-H*
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