K4H561638 Search Results

Contextual Info: DDR SDRAM K4H561638J 256Mb J-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K4H560438H

Abstract: k4h561638h-zc DDR333 DDR400 K4H560838H K4H561638H
Contextual Info: K4H560438H K4H560838H K4H561638H DDR SDRAM 256Mb H-die DDR SDRAM Specification 60 FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4H561638h

Contextual Info: K4H561638H Only for Aisin-AW Preliminary Industrial DDR SDRAM 256Mb H-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K4H561638N

Abstract: K4H560838N 266-pin K4H560438N samsung pinout 922
Contextual Info: Rev. 1.01, May. 2010 K4H560438N K4H560838N K4H561638N 256Mb N-die DDR SDRAM 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4H561638H

Abstract: DDR266 DDR333 DDR400
Contextual Info: K4H561638H Industrial DDR SDRAM 256Mb H-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K4H560438H K4H560838H K4H561638H DDR SDRAM 256Mb H-die DDR SDRAM Specification 60 FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4H561638H-UC

Contextual Info: K4H560438H K4H560838H K4H561638H DDR SDRAM 256Mb H-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4H561638H

Abstract: K4H560838H K4H560438H DDR266 DDR333 DDR400 K4H561638H-UC
Contextual Info: K4H560438H K4H560838H K4H561638H DDR SDRAM 256Mb H-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4H560838J

Contextual Info: K4H560438J K4H560838J K4H561638J DDR SDRAM 256Mb J-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: K4H560438J K4H560838J K4H561638J DDR SDRAM 256Mb J-die DDR SDRAM Specification 60 FBGA with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4H561638J

Abstract: K4H560838J k4h560438j K4H561638 DDR266 DDR333 DDR400 k4h561638j-lc
Contextual Info: K4H560438J K4H560838J K4H561638J DDR SDRAM 256Mb J-die DDR SDRAM Specification 66 TSOP-II with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Hynix Cross Reference

Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
Contextual Info: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T

K4H561638J

Abstract: DDR266 DDR333 DDR400 samsung 922 pinout K4H561638JL
Contextual Info: DDR SDRAM K4H561638J 256Mb J-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Pb-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

M368L1624DTL

Contextual Info: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

256mb ddr333 200 pin

Abstract: DDR266 DDR266A DDR266B DDR333 K4H560438D-GC K4H561638D
Contextual Info: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition

Contextual Info: 512Mb x16, DDP DDR SDRAM DDP 512Mbit DDR SDRAM 8M x 16bit x 4 Banks DDR SDRAM Specification Revision 1.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

Contextual Info: M470L1624DT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M470L1624DT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release.

SDH ADM

Abstract: MultiService Access Platform Frame structure for Multiplexing of four E2 streams into E3 stream barker code motorola STM-1 Physical interface PHY STS-3c-SPE DS33 k4h561638f trace code micron label
Contextual Info: ABRIDGED DATA SHEET Rev: 101508 DS33M30/DS33M31/DS33M33 Ethernet Over SONET/SDH Mapper _ General Description _Features ♦ Support for EoS in One STS-3c/VC-4, EoS Over Up to Three Concatenated STS-1/VC-3s,

ixp435

Abstract: Si3050-FT KENDIN KSZ8995M PNX1702EH/G rt9214 PC28F128J3D PNX1702 TM3260 SI3201-FS IXDP465
Contextual Info: Intel IXP435 Multi-Service Residential Gateway Reference Platform User’s Guide June 2007 Document Number: 316848; Revision: 001US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

k4h510838d

Contextual Info: 512Mb x16, DDP DDR SDRAM DDP 512Mbit SDRAM 32M x 16bit x 4 Banks DDR SDRAM Specification Revision 0.0 Apr. 2002 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as

Contextual Info: M368L1624BTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 184pin Unbuffered DDR SDRAM MODULE M368L1624BTL Revision History

K4H561638H-UCB3

Abstract: 256mb ddr333 200 pin 66 pin tsop package DDR300 DDR333 DDR400 WV3EG6437S-D4
Contextual Info: White Electronic Designs WV3EG6437S-D4 ADVANCED* 256MB – 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED FEATURES DESCRIPTION Unbuffered Double-data-rate architecture The WV3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR