K4M56163DG Search Results

Contextual Info: K4M56163DG - R B N/G/L/F Mobile SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/1.8V The K4M56163DG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the