K4S281632 Search Results

K4S281632C-TL1L

Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L

K4S281632K

Abstract: k4s281632k-ui K4S28163 K4S2816
Contextual Info: Industrial Synchronous DRAM K4S281632K 128Mb K-die SDRAM Specification Industrial Temp. -40 to 85°C RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4S281632K-UC

Abstract: K4S281632K K4S280832K K4S281632KUC K4S280432K K4S280432K-U K4S28163
Contextual Info: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4S281632B-N

Contextual Info: shrink-TSOP CMOS SDRAM K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by

K4S280832

Abstract: K4S281632K-U
Contextual Info: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4S281632C-N

Abstract: samsung 0441 K4S281632C-NL K4S281632CNL
Contextual Info: shrink-TSOP CMOS SDRAM K4S281632C-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S281632C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by

Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM Industrial Temp Support 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D CMOS SDRAM

K4S281632K

Abstract: k4s281632k-uc K4S280832K k4s281632 K4S281632K-U
Contextual Info: K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

K4S281632F-TC75

Abstract: M366S0924FTS-C7A 64Mb samsung SDRAM
Contextual Info: SERIAL PRESENCE DETECT M366S0924FTS-C7A Organization :8Mx64 Composition :8Mx16*4ea Used component part # :K4S281632F-TC75 # of rows in module:1 Row # of banks in component :4 banks Feature :1,000 mil height & single sided component Refresh :4K/64ms Contents :

K4S281632I

Abstract: K4S280832I k4s281632 8Mb x 16 K4S280432i
Contextual Info: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4S281632K

Abstract: K4S281632K-UI K4S281632K-U X2097
Contextual Info: Industrial Synchronous DRAM K4S281632K 128Mb K-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K4S281632B-TC/L1L

Abstract: K4S281632B K4S281632B-TC-L1H
Contextual Info: K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632B CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM

K4S281632M-TL10

Abstract: M466S0924MT0-L10 M466S1723MT2-L10 M466S1723MT3-L10 M466S1724MT2-L10 K4S280832m
Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb M-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924MT0-L10 • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632M-TL10

Contextual Info: K4S281632A CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632A CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM

Contextual Info: IC INFORMATION Function 128Mbit SDRAM CMOS Type VDD K4S281632C-TL1L AVIC-H09 Model 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address

K4S281632K

Abstract: K4S280432K-U K4S280832K K4S280432K
Contextual Info: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

samsung dimm 128mb pc100 144pin

Abstract: 64Mb samsung SDRAM samsung date code 16MX64 8MX16
Contextual Info: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 Feb. 2000 Rev 0.1 Feb. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S0924CT1-L1H/L1L, C1H/C1L • Organization : 8MX64 • Composition : 8MX16 *4 • Used component part # : K4S281632C-TL1H/L1L, C1H/C1L

K4S281632F-TC75

Abstract: K4S28163 M464S0924FTS-C7A serial memory spd memory samsung K4S281632F K4S281632
Contextual Info: SERIAL PRESENCE DETECT M464S0924FTS-C7A Organization :8Mx64 Composition :8Mx16*4ea Used component part # :K4S281632F-TC75 # of rows in module:1 Row # of banks in component :4 banks Feature :1,000 mil height & double sided component Refresh :4K/64ms Contents :

K4S281632O

Abstract: K4S281632O-LL K4S280832O sdram voltage 8Mb samsung SDRAM
Contextual Info: Rev. 1.0, May. 2010 K4S280832O K4S281632O 128Mb O-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D CMOS SDRAM Revision History Revision 0.0 July, 2001

Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM 3.3V - Super Low Power 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Oct. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Oct. 2001 K4S281632D CMOS SDRAM

Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM Extended Temp Support 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D CMOS SDRAM

AC digital ampermeter

Abstract: K4S281632D
Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S281632D CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM

K4S281632D

Abstract: Synchronous DRAM and Samsung
Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001