K4S560832B Search Results
K4S560832B Price and Stock
Samsung Semiconductor K4S560832B-TC1H |
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K4S560832B-TC1H | 269 |
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Samsung Semiconductor K4S560832B-TC75 |
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K4S560832B-TC75 | 35 |
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Samsung Electro-Mechanics K4S560832B-TC75IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC |
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K4S560832B-TC75 | 28 |
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Samsung Electro-Mechanics K4S560832B-TC1HIC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC |
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K4S560832B-TC1H | 10 |
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K4S560832B Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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K4S560832B |
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256Mbit SDRAM 8M x 8-Bit x 4 Banks Synchronous DRAM LVTTL | Original | 131.9KB | 11 | |||
K4S560832B-TC/L1H |
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8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Original | 131.91KB | 11 | |||
K4S560832B-TC/L1L |
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8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Original | 131.91KB | 11 | |||
K4S560832B-TC/L75 |
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8M x 8-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Original | 131.91KB | 11 |
K4S560832B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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K4S560432B-TC75
Abstract: M390S6450BT1-C75 32MX72 64MX4 PC133 SDRAM registered DIMM 512MB samsung
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PC133 168pin) M390S3253BT1-C75 32MX72 32MX8 K4S560832B-TC75 8K/64ms 128bytes K4S560432B-TC75 M390S6450BT1-C75 32MX72 64MX4 PC133 SDRAM registered DIMM 512MB samsung | |
K4S560832B
Abstract: RA12
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K4S560832B 256Mbit 133MHz" A10/AP K4S560832B RA12 | |
Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers, |
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K4S510832B 512Mbit | |
M374S3253BTS
Abstract: M374S3253BTS-C1H M374S3253BTS-C1L
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M374S3253BTS PC100 M374S3253BTS 32Mx72 32Mx8, 400mil 168-pin M374S3253BTS-C1H M374S3253BTS-C1L | |
32MX72
Abstract: 64MX4
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PC100 168pin) 256Mb M377S3253BT3-C1H/C1L 32MX72 32MX8 K4S560832B-TC1H/1L 8K/64ms 32MX72 64MX4 | |
M366S6453BT0
Abstract: M366S6453BT0-C1H M366S6453BT0-C1L
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PC100 M366S6453BT0 M366S6453BT0 64Mx64 32Mx8, 400mil 168-pin M366S6453BT0-C1H M366S6453BT0-C1L | |
Contextual Info: M374S6453BT0 PC133 Unbuffered DIMM Revision History Revision 0.0 May, 2000 • PC133 first published. Revision 0.1 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics. REV. 0.1 July. 2000 M374S6453BT0 PC133 Unbuffered DIMM |
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M374S6453BT0 PC133 PC100 M374S6453BT0 64Mx72 32Mx8, | |
M366S0924CTS-C7A
Abstract: M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75
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PC133 168pin) M366S0424DTS-C7A 4Mx64 4Mx16 K4S641632D-TC75 000mil 4K/64ms M366S0924CTS-C7A M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75 | |
RA12Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations |
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K4S510832B 512Mbit A10/AP RA12 | |
M390S3253BTU-C1L
Abstract: M390S3253BTU-C75 PC133 registered reference design
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M390S3253BTU PC133/PC100 M390S3253BTU 32Mx72 32Mx8, 32Mx8 M390S3253BTU-C1L M390S3253BTU-C75 PC133 registered reference design | |
PC133 registered reference designContextual Info: M390S3253BT1 PC133 Registered DIMM Revision History Revision 0.0 May. 2000 • PC133 first published REV. 0 May. 2000 M390S3253BT1 PC133 Registered DIMM M390S3253BT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD |
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M390S3253BT1 PC133 M390S3253BT1 32Mx72 32Mx8, PC133 registered reference design | |
M366S3253BTS-C75
Abstract: M366S3253BTS
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M366S3253BTS PC133 PC100 M366S3253BTS 32Mx64 32Mx8, M366S3253BTS-C75 | |
M366S6453BT0Contextual Info: M366S6453BT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M366S6453BT0 PC133 Unbuffered DIMM M366S6453BT0 SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
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M366S6453BT0 PC133 M366S6453BT0 64Mx64 32Mx8, | |
M366S3253BTS
Abstract: M366S3253BTS-C7A
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M366S3253BTS PC133 M366S3253BTS 32Mx64 32Mx8, M366S3253BTS-C7A | |
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M374S3253BTSContextual Info: M374S3253BTS PC133 Unbuffered DIMM Revision History Revision 0.0 May, 2000 • PC133 first published. Revision 0.1 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics. REV. 0.1 July. 2000 M374S3253BTS PC133 Unbuffered DIMM |
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M374S3253BTS PC133 PC100 M374S3253BTS 32Mx72 32Mx8, | |
M366S6453BT0
Abstract: M366S6453BT0-C75
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M366S6453BT0 PC133 PC100 M366S6453BT0 64Mx64 32Mx8, M366S6453BT0-C75 | |
M366S3253BTS
Abstract: M366S3253BTS-C1H M366S3253BTS-C1L
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PC100 M366S3253BTS M366S3253BTS 32Mx64 32Mx8, 400mil 168-pin M366S3253BTS-C1H M366S3253BTS-C1L | |
Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Unbuffered SDRAM DIMM 168pin SPD Specification REV. 1.3 March. 2000 REV. 1.3 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0424DTS-C75(Intel SPD 1.2B ver. base) ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü |
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PC133 168pin) M366S0424DTS-C75 4Mx64 4Mx16 K4S641632D-TC75 000mil 4K/64ms | |
M374S6453BT0Contextual Info: M374S6453BT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M374S6453BT0 PC133 Unbuffered DIMM M374S6453BT0 SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
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M374S6453BT0 PC133 M374S6453BT0 64Mx72 32Mx8, | |
Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as |
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K4S510832B 512Mbit | |
K4S281632B-TC75
Abstract: K4S640832D-TC75 M366S1623DT0-C7A K4S280832A-TC75
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PC133 168pin) M366S0824DT0-C7A 8Mx64 4Mx16 K4S641632D-TC75 375mil 4K/64ms K4S281632B-TC75 K4S640832D-TC75 M366S1623DT0-C7A K4S280832A-TC75 | |
INT72R8F32M8H-B75AV
Abstract: K4S560832B-TC75 Date code samsung resistors cl HT012
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INT72R8F32M8H-B75AV 256MB) 168-Pin PC133) PC133 INT72R8F32M8H-B75AV cycles/64ms 54-pin 400-mil K4S560832B-TC75 Date code samsung resistors cl HT012 | |
tsop sensors
Abstract: K4S560832B toshiba Nand flash bga stc 3001
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ISSD64M8STC tsop sensors K4S560832B toshiba Nand flash bga stc 3001 | |
M374S3253BTS-C7A
Abstract: M374S3253BTS
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M374S3253BTS PC133 M374S3253BTS 32Mx72 32Mx8, M374S3253BTS-C7A |