K71 PACKAGE Search Results

transistor k70

Abstract: MIL-STD-1835 K73 Package K70 Package K63 Package diode k70 K69 Package K74 PACKAGE DIAGRAM CERPACK equivalent
Contextual Info: Package Diagram Cerpacks 24-Lead Square Cerpack K63 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A 2 Package Diagram

MIL-STD-1835

Abstract: transistor k70 K70 Package 11F11 80059 80061 diode k70 CERPACK K73 11F-11 K804
Contextual Info: Package Diagram Cerpacks 24-Lead Square Cerpack K63 51-80056 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 51-80057 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 51-80058 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A

k72 transistor

Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224
Contextual Info: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.

C2021 m

Abstract: C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB
Contextual Info: K :Æ^ = PAL C20 Series r fÆ CYPRESS :.-. = Sr SEMICONDUCTOR Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 Features • CMOS EPROM technology for repro­ grammability • Higb performance at quarter power

16L88

Abstract: PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB
Contextual Info: 256=^2 ooQb^o s d c y p MbE D CYPRESS SEMICONDUCTOR PAL C20 Series ~ SEMICONDUCTOR Features • CMOS EPROM technology for « p ro ­ grammability • High performance at quarter power • — tpo = 25 ns — ts = 20 ns — tco = 15 ns — Ice = 45 mA • High performance at military

Contextual Info: es Br Sm QYPRESS 'W SEMICONDUCTOR PAL C20 Series = Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 — tpi> = 20 ns • High reliability — Proven EPROM technology — > 1500V input protection from elec­ trostatic discharge — 100% AC and DC tested — 10% power supply tolerances

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)

SJ27

Abstract: PALC16R 143X1
Contextual Info: PAL C20 Series CYPRESS = SEMICONDUCTOR • C M O S E PR O M technology Tor rep ro g ram m ability • H igh p erform ance a t q u a rte r pow er — t p D = 25 ns — ts = 20 ns • H igh reliability — Proven E P R O M technology — > 1500V in p u t protection from elec­

Contextual Info: CY7C168 CY7C169 r CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — t*A = 25 ns — *a c e = 15 ns (7C169) Low active power — 385 mW Low standby power (7C168) — 83 mW

7c169A

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

Contextual Info: PAL C 20 Series CYPRESS — SEMICONDUCTOR Reprogrammable CMOS PAL® C 16L8, 16R8, 16R6, 16R4 Features • C M O S E P R O M technology for reprogrammability • H igh performance at quarter power — tpD “ 25 ns — ts = 20 ns — t c o = 15 ns — I c e = 45 mA

D164K

Abstract: L69 MARKING CODE 5962-9206203MYX CY7C245-35DMB smd CY 203 CY7C424-40DMB 14LX smd cross reference SMD MARKING CODE UV 5962-85525
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative for the latest SMD update. DESC SMD Standardized Military Drawing Approvals[1] Package[3] SMD Number 84036 84036

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected 7C168A • CMOS for optimum speed/power • High speed — t « = IS ns • Low active power — 385 mW • Low standby power (7C168) - 8 3 mW — tACE = 10 ns (7CI69A)

v 2164

Abstract: CY7C167A-35VC
Contextual Info: CY7C167A SEMICONDUCTOR 16,384 x 1 Static RAM Features Functional Description • Automatic power-down when dese­ lected • CMOS for optim um speed/power • High speed — 15 ns T he CY7C167A is a high-performance CMOS static RAM organized as 16,384 words by 1 bit. Easy memory expansion is

CY7C167A

Abstract: cy7c167a-35pc VA SO
Contextual Info: CYPRESS SEMICONDUCTOR 4b ED a S S f l T b h SO G Q t S O DSaCYP "T ^ b-Z V 05 CYPRESS SEMICONDUCTOR Features Automatic power-down when dese­ lected CMOS for optimum speed/power Highspeed — IS ns Low active power —275 mW Low standby power — 83 mW TTL-compatiblc inputs and outputs

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAS70BRW /BAS70DW-04 / SOT-363 BAS70DW-05 /BAS70DW-06 /BAS70TW SCHOTTKY BARRIER DIODE ARRAYS FEATURES  Low Forward Voltage Drop  Fast Switching  Small Surface Mount Package

16L8-25

Abstract: 16r4-25pc 16L8L-25WC 16R6-20DMB 16R4-40QMB 16R4-4 16L8-30LMB
Contextual Info: _ PAL C 20 Series SEMICONDUCTOR Reprogrammable CMOS PAL® C 16L8, 16R8, 16R6, 16R4 Features C M O S E P R O M technology for reprogrammability • H igh reliability' — Proven E P R O M technology — > 1500V input protectio n from electrostatic discharge

Contextual Info: _ PAL C 20 Series SEMICONDUCTOR Reprogrammable CMOS PAL® C 16L8, 16R8, 16R6, 16R4 Features C M O S E P R O M technology for reprogramm ability • H igh perform ance at quarter power — tPD = 25 ns — t s = 20 ns — t c o = 15 ns

K73 Package

Abstract: DIODE marking A2 c3 marking marking c3 SOT-363 marking 05 BAS70BRW BAS70DW-04 BAS70DW-05 BAS70DW-06 BAS70TW
Contextual Info: BAS70TW /DW-04 / DW-05 /DW-06 /BRW NEW PRODUCT SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features • · · · Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection SOT-363 A B C

7C167A

Contextual Info: _CY7C167A SEMICONDUCTOR 16,384 x 1 Static RAM Features Functional Description • Automatic power-down when dese­ lected T h e CY 7C167A is a high-perform ance C M O S static R A M organized as 16,384 words by 1 bit. Easy m em ory expansion is

Contextual Info: BAS70TW /DW-04 / DW-05 /DW-06 /BRW NEW PRODUCT SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features • · · · Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection SOT-363 A KXX

329u

Contextual Info: CY7C167A CYPRESS SEMICONDUCTOR 16,384 x 1 Static RAM Functional Description Features Automatic power-down when dese­ lected CMOS for optimum speed/power High speed — 15 ns Low active power — 275 mW Low standby power — 83 mW TTL-compatible inputs and outputs

marking CODE nw

Abstract: marking code 04 sot-363 sot363 marking 02
Contextual Info: BAS70TW /DW-04 / DW-05 /DW-06 /BRW NEW PRODUCT SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features • · · · Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection SOT-363 A · ·