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    K8A60 Search Results

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    K8A60 Price and Stock

    Toshiba America Electronic Components TK8A60W,S4VX

    MOSFET N-CH 600V 8A TO220SIS
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    DigiKey TK8A60W,S4VX Tube 34 1
    • 1 $3.27
    • 10 $3.27
    • 100 $1.4842
    • 1000 $1.11792
    • 10000 $1.075
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    Avnet Americas TK8A60W,S4VX Tube 16 Weeks 50
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    • 1000 $0.9546
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    Mouser Electronics TK8A60W,S4VX
    • 1 $2.66
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    • 100 $1.49
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    Toshiba America Electronic Components TK8A60W5,S5VX

    MOSFET N-CH 600V 8A TO220SIS
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    DigiKey TK8A60W5,S5VX Tube 1
    • 1 $2.41
    • 10 $2.41
    • 100 $1.0878
    • 1000 $0.76192
    • 10000 $0.7075
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    Avnet Americas TK8A60W5,S5VX Tube 16 Weeks 50
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    Mouser Electronics TK8A60W5,S5VX 196
    • 1 $2.46
    • 10 $2.46
    • 100 $1.11
    • 1000 $0.725
    • 10000 $0.707
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    Toshiba America Electronic Components TK8A60DA(STA4,Q,M)

    MOSFET N-CH 600V 7.5A TO220SIS
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    DigiKey TK8A60DA(STA4,Q,M) Tube
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    Toshiba America Electronic Components TK8A60W,S4VX(M

    Mosfet, N-Ch, 600V, 8A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Toshiba TK8A60W, S4VX(M
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    Newark TK8A60W,S4VX(M Bulk 223 1
    • 1 $1.74
    • 10 $1.49
    • 100 $1.21
    • 1000 $1.01
    • 10000 $0.804
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    EBV Elektronik TK8A60W,S4VX(M 23 Weeks 50
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    Toshiba America Electronic Components TK8A60W5,S5VX(M

    Mosfet, N-Ch, 600V, 8A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Toshiba TK8A60W5,S5VX(M
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    Newark TK8A60W5,S5VX(M Bulk 1
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    EBV Elektronik TK8A60W5,S5VX(M 23 Weeks 50
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    K8A60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k8a60da

    Abstract: K8A60D k8a60 TK8A60DA CHC10
    Contextual Info: K8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original
    TK8A60DA k8a60da K8A60D k8a60 TK8A60DA CHC10 PDF

    K8A60DA

    Abstract: TK8A60DA K8A60D k8a60 TK8A60D S12C
    Contextual Info: K8A60DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K8A60DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.8 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original
    TK8A60DA SC-67 2-10U1B 20070701-JA K8A60DA TK8A60DA K8A60D k8a60 TK8A60D S12C PDF

    k8a60da

    Abstract: tk8a60da K8A60D TK8A60D k8a60
    Contextual Info: K8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original
    TK8A60DA k8a60da tk8a60da K8A60D TK8A60D k8a60 PDF

    Contextual Info: K8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original
    TK8A60DA PDF

    k8a60da

    Abstract: TK8A60DA k8a60
    Contextual Info: K8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)


    Original
    TK8A60DA k8a60da TK8A60DA k8a60 PDF

    k8a60da

    Contextual Info: K8A60DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K8A60DA 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.8 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original
    TK8A60DA k8a60da PDF