KA BAND DETECTOR Search Results

KA band detector

Abstract: AMP3001 AMP-90 AMM9002 AMH9001 AMP9001
Contextual Info: SCHOTTKY BARRIER MIXER DIODES LOW BARRIER NTYPE FREQUENCY BAND TYPE NUMBER S S S X X X X Km Km Km Ka K. K. Ka Ka AML3001 AML3002 AML3003 AML9001 AML9002 AML9003 AML9004 AML1601 AML1602 AML1603 AML1604 AML3S01 AML3502 AML3503 AML3504 AML3505 FREQUENCY BAND

1N830A

Abstract: "Point Contact Diodes" 1N32 VIDEO DETECTOR MicroMetrics tangential 1N1611 1N32 1N32A 1N830 1N833
Contextual Info: Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal

"Point Contact Diodes"

Abstract: 1N1611A 1N32A 1N830 1N32 1N32 VIDEO DETECTOR 1N377 tangential point contact 1N3778
Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal

Contextual Info: Zero Biased Ka Band Waveguide Detector, WR-28, Negative Video Out, 26.5 GHz to 40 GHz, UG-599/U TECHNICAL DATA SHEET PE80T3005 The PE80T3005 is an Ka Band Waveguide Detector. The Detector operates in the 26.5 GHz to 40 GHz Frequency Range and has a Negative Output with a Sensitivity of -1000 mv/mW Minimum. The unit operates over a 0°C to +50°C Temperature

RF remote control 10 MHz 17 Pin

Abstract: RF power amplifier MHz
Contextual Info: BLOCK UPCONVERTERS FOR INTEGRATION IN HIGH POWER AMPLIFIERS Ka-Band Model C-, X-, Ku- and DBS-Band Models FEATURES • 32 dB attenuation control • 10 MHz reference input on RF input or external reference input connector • Analog and RS485 remote control

UG-383

Abstract: WR6 DIODE ZBD-06 UG-387 ZBD 10 WR19 UG599 UG383 UG-383/U waveguide ZBD-28
Contextual Info: Zero-Biased Detectors, 26.5 to 170 GHz ZBD-Series Zero-biased Detectors, 26.5 to 170 GHz. Typical Ka-band sensitivity 3,500 mV/mW. Specifications MODEL NUMBER Frequency Range GHz Input Waveguide Waveguide Flange Typical Video Sensitivity at –20 dBm Input

MA40266

Abstract: MA40204 MA400 MA40052 ma402
Contextual Info: Silicon Schottky Detector Diodes Features • WIDE SELECTION OF PACKAGES FOR STRIPLINE, COAXIAL AND WAVEGUIDE DETECTORS ■ CHIP DIODES AVAILABLE ■ BOTH P AND N TYPE DIODES ■ EXCELLENT SENSITIVITY THROUGH Ka-BAND ■ LOW 1/f NOISE Description Applications

Contextual Info: Schottky Detector Diodes Schottky Detector Diodes Rev. V3 Features • Wide Selection of Packages for Stripline, Coaxial, and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band • Low 1/F Noise

ma40208

Abstract: MA400 MA40052 MA40268-276
Contextual Info: Chip and Packaged Silicon Schottky Detector Diodes Features • WIDE SELECTION OF PACKAGES FOR STRIPLINE, COAXIAL AND WAVEGUIDE DETECTORS ■ CHIP DIODES AVAILABLE 120 ■ BOTH P AND N TYPE DIODES 276 I ■ EXCELLENT SENSITIVITY THROUGH Ka-BAND ■ LOW 1/f NOISE

Contextual Info: AjfaEM M art A M P co m p a n y Schottky Detector Diodes V 2.00 Features Case Styles • Wide Selection of Packages for Stripline, Coaxial and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band

MA40264-186

Abstract: MA40207-120 MA40270-135A MA40207 MA40272 MA40108 JD2078 MA40264 MA40272 135A MA40053
Contextual Info: Æ an A M P company Schottky Detector Diodes V 2.00 Features Case Styles See appendix for complete dimen­ • Wide Selection of Packages for Stripline, Coaxial and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band

APH131C

Contextual Info: APH131C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 35 to 40 GHz • Linear gain: 16 dB • PldB: 23 dBm • Built-in output power detector with reference port • Unconditionally stable • DC power: 4 Vdc at 600 mA Description and Applications

A40272

Abstract: A4022
Contextual Info: M a n A M P \ co m p an y Schottky Detector Diodes V3.00 Features Case Styles • Wide Selection o f Packages for Stripline, Coaxial and W aveguide Detectors • Chip D iodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band

Contextual Info: TFF1007HN Low phase noise LO generator for VSAT applications Rev. 1 — 23 August 2012 Product data sheet 1. General description The TFF1007HN is a frequency generator intended for low phase noise Local Oscillator LO circuits for Ka band VSAT transmitters and transceivers. The specified phase noise

Contextual Info: TGA4537-SM 29 – 35 GHz 1W Power Amplifier Applications • Point-to-Point Radio • Ka-band Sat-Com 26 lead 5x5mm ACQFN package Product Features Functional Block Diagram Frequency Range: 29 – 35 GHz Power: 31 dBm Psat, 30 dBm P1dB Gain: 18 dB TOI: 39 dBm at 20 dBm/tone

AML3501

Abstract: k and ka band radar detector AMP-90 AMP3001 ADN16 KA band diode detector waveguide ADN3002 AMH3001
Contextual Info: 0258354 ADVANCED SEMICONDUCTOR 92D 0 0 1 0 6 D 7• '-¿ ? 7 -ö 7 ]>E|0ESa3SM OOOOlOt, 7 | SCHOTTKY BARRIER MIXER AND DETECTOR DIODES ASI’s Schottky Barrier Mixer and Detector Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to

Contextual Info: DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diode Singles, Pairs, and Quads Bondable Beam-Lead Devices Applications • Microwave Integrated Circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion

DMF2820-220

Abstract: DMJ2092-222 DMF2822 DMF2828 dmj2836 ka-band mixer DME2127-000 DME2333-000 MAX182 DMF2344-000
Contextual Info: DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs & Quads, Bondable & Packaged Chips Applications x Microwave Integrated Circuits x Mixers x Detectors Features x Low 1/f noise x Low intermodulation distortion x Epoxy and hermetically sealed packages

Contextual Info: DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs & Quads, Bondable & Packaged Chips Applications x Microwave Integrated Circuits x Mixers x Detectors Features x Low 1/f noise x Low intermodulation distortion x Epoxy and hermetically sealed packages

LN358

Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
Contextual Info: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

1N1611AR

Abstract: UHF diode 1N830A DIODE KU 105 D Silicon Point Contact Diode 1N358R
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 4flE D • 0 5 6 5 4 4 3 Q 0 0 1 1 7 0 bfl? ■ ALP Silicon Point Contact Detector Diodes 'Tcr>o7 Features ■ Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed

x band diode detector waveguide

Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Contextual Info: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes

DMJ3086

Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages