KDS114 Search Results

Contextual Info: SEMICONDUCTOR KDS114V MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking P1 No. 2005. 3. 28 Item Marking Description Device Mark P1 KDS114V Revision No : 0 1/1

KDS114E

Contextual Info: SEMICONDUCTOR KDS114E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Low Series Resistance : rS=0.5 Typ. . 1 A Small Total Capacitance : CT=1.2pF(Max.). E C B CATHODE MARK Small Package. 2 D MAXIMUM RATING (Ta=25

KDS114V

Contextual Info: SEMICONDUCTOR KDS114V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES CATHODE MARK ・Small Package. ・Small Total Capacitance : CT=1.2pF Max. . C D 1 2 ・Low Series Resistance : rS=0.5Ω(Typ.). B DIM A B C D E

kds114

Contextual Info: SEMICONDUCTOR KDS114 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. L K A ᴌSmall Total Capacitance : CT=1.2pF Max. . H F ᴌLow Series Resistance : rS=0.5ή(Typ.). 1 E ᴌSmall Package. G B CATHODE MARK FEATURES 2 J D

Contextual Info: SEMICONDUCTOR KDS114 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. L K H F Low Series Resistance : rS=0.5 Typ. . A Small Total Capacitance : CT=1.2pF(Max.). 1 E Small Package. G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25

KDS114

Abstract: MARKING R3
Contextual Info: SEMICONDUCTOR KDS114 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 R3 1 2 Item Marking Description Device Mark R3 KDS114 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KDS114E

Contextual Info: SEMICONDUCTOR KDS114E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking UD No. 2000. 12. 27 Item Marking Description Device Mark UD KDS114E Revision No : 0 1/1

KDS114

Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KDS114 SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES • Small Package. • Small Total Capacitance : Gr=1.2pF Max. . • Low Series Resistance : rs=0.5ß (Typ.). MAXIMUM RATINGS (Ta=25°C)

DIODE W7

Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE Features • Small package • Small total capacitance • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W7 Applications • VHF tuner band switch Top View Marking Code: "W7" Simplified outline SOD-323 and symbol

Contextual Info: SEMICONDUCTOR KDS114E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. Small Total Capacitance : CT=1.2pF Max. . Low Series Resistance : rS=0.5 (Typ.). E C 1 A Small Package. B CATHODE MARK FEATURES 2 D MAXIMUM RATING (Ta=25

MARKING y vsc

Contextual Info: SEMICONDUCTOR KDS114V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES CATHODE MARK Small Package. Small Total Capacitance : CT=1.2pF Max. . C D 1 2 Low Series Resistance : rS=0.5 (Typ.). B DIM A B C D E F A MAXIMUM RATING (Ta=25

KDS114

Contextual Info: SEMICONDUCTOR KDS114 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. L K H F ・Low Series Resistance : rS=0.5Ω Typ. . A ・Small Total Capacitance : CT=1.2pF(Max.). 1 E ・Small Package. G B CATHODE MARK FEATURES 2 J D

kds114

Abstract: ud marking
Contextual Info: SEMICONDUCTOR KDS114 MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking UD 0 1 2 1 No. Item Marking Description Device Mark UD KDS114 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KDS114E

Contextual Info: SEMICONDUCTOR KDS114E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES G 1 G ・Low Series Resistance : rS=0.5Ω Typ. . E C A ・Small Total Capacitance : CT=1.2pF(Max.). B CATHODE MARK ・Small Package. 2 D MAXIMUM RATING (Ta=25℃)

Sod marking w7

Abstract: DIODE W7
Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"

marking code w7

Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"

W7 sod 323

Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"

Contextual Info: KDS114WS SILICON EPITAXIAL PLANAR DIODE Features • Small package • Small total capacitance • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W7 Applications • VHF tuner band switch Top View Marking Code: "W7" Simplified outline SOD-323 and symbol

KDS114E

Contextual Info: SEMICONDUCTOR KDS114E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌLow Series Resistance : rS=0.5ή Typ. . E 1 A ᴌSmall Total Capacitance : CT=1.2pF(Max.). C B CATHODE MARK ᴌSmall Package. 2 D F MAXIMUM RATING (Ta=25ᴱ)

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor