KM4132G271 Search Results

KM4132G271B

Contextual Info: KM4132G271B CMOS SGRAM 128K X 32Bit X 2 Banks Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271B is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS technol­

Contextual Info: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS

samsung CL21

Abstract: 2G271
Contextual Info: KM4132G271 ELECTRONICS Graphic Memory 128K x 32Bit x 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance

KM4132G271B

Contextual Info: KM4132G271B CMOS SGRAM Revision History Revision 2.4 May 1998 • Added KM4132G271B-7 product(143MHz @ CL =3). Revision 2.3 (March 1998) • Added Reverse Type Package in ODERING INFORMATION and PIN CONFIGURATION. • Removed KM4132G271B-H/12 product(-H : 100MHz @ CL =2, -12 : 83MHz @ CL=3).

Contextual Info: Preliminary KM4132G271 CMOS SGRAM 128K x 32 x 2Bit Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply The KM4132G271 is 8,388,608 bits synchronous high data • LVTTL com patible with multiplexed address rate Dynamic RAM organized as 2 x 131,072 words by 32

KM4132G271B

Contextual Info: KM4132G271B CMOS SGRAM 8Mbit SGRAM 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL Revision 2.4 May 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 2.4 May 1998 KM4132G271B CMOS SGRAM Revision History

Contextual Info: KM4132G271B CMOS SGRAM 8Mbit SGRAM 128K X 32bit X 2 Banks Synchronous Graphic RAM LVTTL Revision 2.4 May 1998 Samsung Electronics reserves the right to change products or specification without notice. Rev. 2.4 May 1998 ELECTRONICS KM4132G271B CMOS SGRAM

DQ 51

Abstract: KM4132G271A KM4132G271A-10 KM4132G271A-12 KM4132G271A-8
Contextual Info: KM4132G271A CMOS SGRAM 128K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION The KM4132G271A is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits,

Contextual Info: KM4 13 2 G 2 7 1 ELECTRONICS Graphic Memo ry 128K x32B itx2B ank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG’S high performance

Contextual Info: KM4132G271B CMOS SGRAM 8Mbit SGRAM 128K X 32bit X 2 Banks Synchronous Graphic RAM LVTTL Revision 2.4 May 1998 Samsung Electronics reserves the right to change products or specification without notice. Rev. 2.4 May 1998 KM4132G271B CMOS SGRAM Revision History

samsung 42" plasma tv power supply diagrams

Abstract: samsung plasma tv circuit diagram Genesis microchip dat samsung plasma 51 LCD tv display pinout diagram MICRONAS MARKING STYLE C2002-DAT-01D marking Microchip GMVLX1A-X VPX32 vlx1a
Contextual Info: DATA SHEET gmVLX1A-X C2002-DAT-01D April 2000 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 2150 Gold Street, Alviso, CA USA 95002 Tel: (408) 262-6599 Fax: (408) 262-6365 www.genesis-microchip.com / info@genesis-microchip.com

mip 2h2

Abstract: Solid state CCIR ca 152 sh ei 33ca RGB565 to rgb888 PMB 8888 660-227 331 dim hee nv tag 8514 SERVICE MANUAL tv sharp A205D
Contextual Info: Advance This document contains information on a product under development. Information is not warranted and is subject to change. Bt2166 High-Performance PCI/AGP 3D Video/Graphics Controller Applications Feature Summary • • • • • • • Microsoft Windows 95 Direct3D accelerator

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

km4132g512

Abstract: SGRAM RC2H KM4232W
Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE . 9 II. DUAL PORT RAM DATA SHEETS 1.KM4216C256 . VRAM EDO, 2WE , 256Kx16 . 13 2.KM4216C258 . VRAM(EDO, 2CAS), 256Kx16 .54

KM4132G512Q-10

Abstract: plasma tv BLOCK diagram samsung KM4132G512Q hitachi plasma tv diagram hitachi plasma electronic diagram up C2002 C2002 km4132g512 samsung tv plasma SAA7112
Contextual Info: Product Brief gmVLX1A-X C2002-PBR-01H Description Features The Genesis Microchip gmVLX1A-X is a low-cost, highly integrated IC for progressive television, DVD and Home Theater applications. This feature-packed chip offers Genesis state-of-the-art Vertical/Temporal

SGRAM

Abstract: KMM966G512BQ KM4132G
Contextual Info: SGRAM MODULE KMM965G512BQ P N / KMM966G512BQ(P)N 4MB SGRAM MODULE (512Kx64 SODIMM based on 256Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.5 July 1998 -1ELECTRONICS Rev. 2.5 (July. 1998) SGRAM MODULE KMM965G512BQ(P)N / KMM966G512BQ(P)N

TDQ40

Contextual Info: SGRAM MODULE KMM966G512BQ P N KMM966G512BQ(P)N SGRAM SODIMM 512Kx64 SGRAM SODIMM based on 256Kx32,1K Refresh, 3.3V Synchronous Graphie RAMs FEATURES GENERAL DESCRIPTION • Performance Range Part NO. Max. Freq. (tee) I KMM966G512BQ(P)N-G8 125MHz (8ns) @CL=3

Contextual Info: KMM966G512BQ P N SGRAM MODULE 4MB SGRAM MODULE (512Kx64 SO DIM M based on 256Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.1 December 1997 Rev.2.1 (Dec. 1997) BEHMB KMM966G512BQ(P)N SGRAM MODULE Revision History Revision 2.1 (December 3,1997)

KMM966G512AQN-G0

Abstract: 30H22 KMM966G512AQN-G2
Contextual Info: KMM966G512AQN SGRAM MODULE 4MB SGRAM MODULE 512Kx64 SO DIM M based on 256Kx32 SGRAM Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.0 December 1997 Rev.2.0 (Dec. 1997) BEHMB KMM966G512AQN SGRAM MODULE Revision History Revision 2.0 (December 3,1997)

lm 398- SAMPLE AND HOLD

Contextual Info: KMM966G256BQ P N SGRAM MODULE KMM966G256BQ(P)N SGRAM SODIMM 256Kx64 SGRAM SODIMM based on 256Kx32, 1K Refresh, 3.3V Synchronous Graphie RAMs FEATURE GENERAL DESCRIPTION • Performance range Part NO. Max. Freq. (tcc) KMM966G256BQ(P)N-G8 125MHz (8ns) GCL=3

KMM966G512BQ

Abstract: km4132g
Contextual Info: SGRAM MODULE KMM965G512BQ P N / KMM966G512BQ(P)N Revision History Revision 2.5 (July 1998) • Added -7(143MHz) speed product. • Changed SPD data, Byte #62 from 02h to 00h. • Changed Pin #43 from DQ34 to DQ35 in PIN CONFIGURATIONS. Revision 2.4 (June 1998)

Contextual Info: KM4 1 3 2 G2 7 1 B C M O S SGRAM 8Mbit SGRAM 1 2 8 K X 3 2 b ìt X 2 B a n k s S y n c h r o n o u s G ra p h ic R A M LVTTL Revision 2.1 November 1997 ISOTROPO -1 - Rev.2.1 Nov. 1997 KM4 1 3 2 G2 7 1 B C M O S SGRAM Revision History R ev i s i on 2.1 ( N o v e m b e r 1 997)

KMM966G256AQN

Contextual Info: KMM966G256AQN SGRAM MODULE 2MB SGRAM MODULE 256Kx64 SODIMM based on 256Kx32 SGRAM Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.0 December 1997 Rev.2.0 (Dec. 1997) ELECTRONO KMM966G256AQN SGRAM MODULE Revision History Revision 2.0 (December 3,1997)

Contextual Info: SGRAM MODULE KMM965G256BQ P N / KMM966G256BQ(P)N Revision History Revision 2.5 (July 1998) • Added -7(143MHz) speed product. • Changed SPD data, Byte #62 from 02h to 00h. Revision 2.4 (June 1998) • Added KMM965G256B product which does not support SPD.