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    KM4132G512Q-10

    Abstract: KM4132G512Q KM4132G512 KM4132G512Q7 KM4132G512Q8 KM4132G512Q-7 KM4132G512Q-8 KM4132G512-G KM4132G512TQ10 KM4132G512TQ-6
    Text: KM4132G512 CMOS SGRAM Revision History Revision 2.2 June 1998 • Added Low Power version product (KM4132G512-G*). • Changed ICC3N from 50mA to 60mA, ICC3NS from 30mA to 40mA in DC CHARACTERISTICS. Revision 2.1 (May 1998) • Added KM4132G512-6 product(166MHz @ CL =3).


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    PDF KM4132G512 KM4132G512-G* KM4132G512-6 166MHz KM4132G512-7 143MHz KM4132G512-H/12 100MHz 83MHz 125MHz, KM4132G512Q-10 KM4132G512Q KM4132G512 KM4132G512Q7 KM4132G512Q8 KM4132G512Q-7 KM4132G512Q-8 KM4132G512-G KM4132G512TQ10 KM4132G512TQ-6

    km4132g512

    Abstract: KM4132G512Q8 KM4132G512Q-10 KM4132G512TQ10 bl-4u KM4132G512Q km4132g512q-8 KM4132G512Q10 870-I KM4132G512TQ-7
    Text: KM4132G512 CMOS SGRAM 256K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G512 is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 262,144 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS technol­


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    PDF KM4132G512 32Bit KM4132G512 KM4132G512Q8 KM4132G512Q-10 KM4132G512TQ10 bl-4u KM4132G512Q km4132g512q-8 KM4132G512Q10 870-I KM4132G512TQ-7