KM416S16230 Search Results
KM416S16230 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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KM416S16230AT-G/F8 |
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256Mbit SDRAM | Original | 134.39KB | 11 | ||
KM416S16230AT-G/FA |
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256Mbit SDRAM | Original | 134.39KB | 11 | ||
KM416S16230AT-G/FH |
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256Mbit SDRAM | Original | 134.39KB | 11 | ||
KM416S16230AT-G/FL |
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256Mbit SDRAM | Original | 134.39KB | 11 |
KM416S16230 Price and Stock
Samsung Electro-Mechanics KM416S16230AT-GL16M X 16 SYNCHRONOUS DRAM, 5.4 NS, PDSO54 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM416S16230AT-GL | 44 |
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KM416S16230 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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XC5LContextual Info: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS |
OCR Scan |
KM416S16230A 16Bit KM44S64230A 10/AP XC5L | |
KM416S16230Contextual Info: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May 1999 KM416S16230A CMOS SDRAM Revision History |
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KM416S16230A 256Mbit 16bit A10/AP KM416S16230 | |
Contextual Info: Preliminary CMOS SDRAM KM416S16230A 4M X 16Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S64230A is 268,435,456 bits synchronous high data • JED EC standard 3.3V pow er supply rate Dynam ic RAM organized as 4 x 4,196,304 w ords by 16 |
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KM416S16230A 16Bit 44S64230A 10/AP | |
Contextual Info: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Jun 1999 KM416S16230A CMOS SDRAM Revision History |
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KM416S16230A 256Mbit 16bit A10/AP | |
Contextual Info: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS |
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KM416S16230A 16Bit KM44S64230A A10/AP | |
Contextual Info: KM416S16230A Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Jan., 1999 • PC133 first published. REV. 0 Jan. '99 Preliminary PC133 CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply |
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KM416S16230A PC133 16Bit KM44S64230A A10/AP | |
TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
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256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260 | |
Contextual Info: KMM366S1654AT PC100 SDRAM MODULE KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654AT is a 16M bit x 64 Synchro • Performance range nous Dynamic RAM high density memory module. The Sam |
OCR Scan |
KMM366S1654AT PC100 KMM366S1654AT 16Mx64 16Mx16, M366S1654AT-G8 125MHz 400mil | |
Contextual Info: PC100 SDRAM MODULE KMM366S1654ATS KMM366S1654ATS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654ATS is a 16M bit x 64 Synchro • Performance range nous Dynamic RAM high density memory module. The Sam |
OCR Scan |
PC100 KMM366S1654ATS KMM366S1654ATS 16Mx64 16Mx16, 400mil 168-pin | |
Contextual Info: SERIAL PRESENCE DETECT SDRAM MODULE PC100 Unbuffered SDRAM SODIMM 144pin SPD Specification REV. 1.50 November 1998 REV. 1.50 Nov. 1998 SERIAL PRESENCE DETECT SDRAM MODULE KMM464S424CT1-FH/FL •Organization : 4MX64 •Composition : 4MX16 *4 •Used component p a rt# : KM416S4030CT-FH/FL |
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PC100 144pin) KMM464S424CT1-FH/FL 4MX64 4MX16 KM416S4030CT-FH/FL 4K/64ms 100MHz | |
Contextual Info: KMM366S1654AT PC100 SDRAM MODULE KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654AT is a 16M bit x 64 Synchro • Performance range nous Dynamic RAM high density memory module. The Sam |
OCR Scan |
KMM366S1654AT KMM366S1654AT PC100 16Mx64 16Mx16, 400mil 168-pin | |
km48s2020ct
Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
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KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030 | |
Contextual Info: PC100 SODIMM KMM464S1654AT1 Revision History Revision 0.1 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. |
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KMM464S1654AT1 PC100 16Mx16 KM416S16230AT | |
Contextual Info: PC100 SODIMM KMM464S3254AT1 Revision History Revision 0.1 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. |
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KMM464S3254AT1 PC100 16Mx16 KM416S16230AT | |
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Contextual Info: PC100 SDRAM MODULE KMM366S3254ATS KMM366S3254ATS SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S3254ATS is a 32M bit x 64 Synchro • Performance range nous Dynamic RAM high density memory module. The Sam |
OCR Scan |
PC100 KMM366S3254ATS KMM366S3254ATS 32Mx64 16Mx16, 400mil 168-pin | |
ad 149Contextual Info: KMM366S3254AT PC100 SDRAM MODULE KMM366S3254AT SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S3254AT is a 32M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung |
OCR Scan |
KMM366S3254AT KMM366S3254AT PC100 32Mx64 16Mx16, 400mil 168-pin ad 149 | |
KMM366S1654AT-G8
Abstract: KMM366S1654AT-GH KMM366S1654AT-GL
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KMM366S1654AT PC100 Cycles/64ms Cycles/64ms. KMM366S1654AT 16Mx64 16Mx16, KMM366S1654AT-G8 KMM366S1654AT-GH KMM366S1654AT-GL | |
Contextual Info: Preliminary PC100 144pin SDRAM SODIMM KMM464S1654AT1 KMM464S1654AT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM464S1654AT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM464S1654AT1 consists of four CMOS 16M x 16 bit |
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KMM464S1654AT1 KMM464S1654AT1 PC100 144pin 16Mx64 16Mx16, 400mil 144-pin | |
KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
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KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT |