KM416S4031 Search Results

km416s4031ct-g

Contextual Info: Preliminary CMOS SDRAM KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs

Contextual Info: KM416S4031B CMOS SDRAM 1M X 16Bit X 4 Banks Synchronous DRAM with SSTL interface GENERAL DESCRIPTION FEATURES T he KM 416S4031B is 67,108,864 bits synchronous high data •JE D E C standard 3.3V power supply rate Dynam ic RAM organized as 4 x 1,048,576 w ords by 16

KM416S4031C

Abstract: 1M x 16Bit x 4 Banks Synchronous DRAM km416s4031ct-g
Contextual Info: Preliminary CMOS SDRAM KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs

KM416S4031BT-G8

Contextual Info: KM416S4031B CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION •JEDEC standard 3.3V power supply •SSTL_3 Class II compatible with multiplexed address •Four banks operation •MRS cycle with address key programs

KM416S4031BT-G8

Abstract: KM416S4031BT-G7
Contextual Info: Preliminary CMOS SDRAM KM416S4031B 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs

Contextual Info: Preliminary KM416S4031C CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • • • • The KM416S4031C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS

KM416S4031BT-GS

Abstract: KM416S4031 KM416S4031BT-G8
Contextual Info: Preliminary KM416S4031B CMOS SDRAM 1M X 16Bit X 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • • • • The KM416S4031B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS

KM416S4030A

Abstract: km416s4031 KM416S4030AT-G
Contextual Info: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.

KM416S4030AT

Abstract: ZX-03 KM416S4030AT-G
Contextual Info: KM416S4030AT SDRAM ELECTRONICS 1M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .