KM416V1000B Search Results

Contextual Info: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

C1000B

Abstract: KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B
Contextual Info: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power

C-1000B

Contextual Info: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

C1000B

Abstract: 3020C
Contextual Info: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L with Fast Page Mode 2M x 32 DRAM SODIMM, using1MX16, 4K & 1K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M x 32 bits Dynamic RAM high density memory module. The Samsung

Contextual Info: KM416V1200BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM416C1200BJ C M O S DRAM ELECTRO NICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

C1000B

Abstract: KM416CI200BJ
Contextual Info: KM416C1200BJ CMOS DRAM ELECTRONICS 1M x 1 6 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L with Fast Page Mode 2M X 32 DRAM SODIMM, using1MX16, 4K & 1K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M x 32 bits Dynamic RAM

Contextual Info: KM416V1200BT CMOS DRAM ELECTR O NICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L with Fast Page Mode 1M x 32 DRAM SODIMM, 4K & 1K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KM M 332V10 2 4BT is a 1M x 32 bits Dynamic Part Identification

Contextual Info: KM416C1000BT C MOS DR A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: Preliminary KMM332V104BT-L KMM332V124BT-L DRAM MODULE KMM332V104BT-L & KMM332V124BT-L Fast Page Mode 1Mx32 DRAM DIMM, Low Power, 4K & 1K Refresh, 3.3V G ENERAL FEATURES DESCRIPTIO N The Samsung KMM332V10 2 4BT is a 1M bit x 32 Dynamic RAM high density memory module. The

C1000B

Abstract: I22S stt 300
Contextual Info: K M 4 1 6 V l O O O BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM OS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

KM416C60-7

Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Contextual Info: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55

km44c2560

Abstract: KM48V2104B-6 KM44C16004A-5
Contextual Info: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8

C1000B

Abstract: C-1000B
Contextual Info: KM416C1200BT ELECTRONICS C MO S D R A M 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

04BJ

Abstract: I2142 v10204b
Contextual Info: KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B Preliminary CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power