KM416V4104AS Search Results
KM416V4104AS Price and Stock
Samsung Semiconductor KM416V4104AS64M X 16 EDO DRAM EDO DRAM, 4MX16, 60ns, CMOS, PDSO50 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM416V4104AS6 | 56 |
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KM416V4104AS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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KM416V4104ASContextual Info: KM416V4104AS CMOS D R A M ELECTRONICS 4 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , |
OCR Scan |
KM416V4104AS 4Mx16 D033TbS KM416V4104AS | |
Contextual Info: DRAM MODULE KMM332F804AS/AZ-L KMM332F804AS/AZ-L EDO Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F804A |
OCR Scan |
KMM332F804AS/AZ-L KMM332F804AS/AZ-L 4MX16, KMM332F804A 8Mx32bits 4Mx16bits 72-pin | |
KM416V4104ASContextual Info: KMM466F404AS1-L ELECTRONICS DRAM Module KMM466F404AS1 -L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404AS1-L is a 4M bit x 64 • Part Identification Dynamic RAM high density memory module. The |
OCR Scan |
KMM466F404AS1-L KMM466F404AS1 4Mx64 4Mx16, KMM466F404AS1-L 4Mx16bit 50-pin 400mil 144-pin KM416V4104AS | |
KM416V4104AS-LContextual Info: DRAM MODULE KMM332F404AS/AZ-L KMM332F404AS/AZ-L EDO Mode 4M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F404A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F404A |
OCR Scan |
KMM332F404AS/AZ-L KMM332F404AS/AZ-L 4MX16, KMM332F404A 8Mx32bits 4Mx16bits 72-pin KM416V4104AS-L | |
KM48S2020CT-G10
Abstract: hy57v168010a HY57V168010ATC10 en210b HY57V168010a-tc-10 KM416S4030AT-F10 KM416V4104AS-L6 D4516821 THA04D04 M5M4V16s30
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10BaseT 100BaseTx XJ4336J FMC-560 3C563C-TP APA-1460A PRD-250WN KM48S2020CT-G10 hy57v168010a HY57V168010ATC10 en210b HY57V168010a-tc-10 KM416S4030AT-F10 KM416V4104AS-L6 D4516821 THA04D04 M5M4V16s30 | |
KM416V4104ASContextual Info: DRAM MODULE KMM466F804AS1 -L KMM466F804AS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804AS1-L is a 8Mx64bits Dynamic RAM high density memory module. The - KMM466F804AS1 -L 4096 cycles/128ms, TSOP, L-ver |
OCR Scan |
KMM466F804AS1 KMM466F804AS1-L 4Mx16, 8Mx64bits 4Mx16bits 400mil 144-pin KM416V4104AS |