KM41C4000C Search Results

Contextual Info: CMOS DRAM KM41C4000C/CL/CSL 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM41C4000C/CL/CSL-5 50ns 13ns 90ns KM41C4000C/CL/CSL-6 60ns 15ns 110ns KM41C4000C/CL/CSL-7 70ns 20ns 130ns KM41C4000C/CL7CSL-8

Contextual Info: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KM418C256

Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80

BY 235

Contextual Info: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 4 ,1 94 ,3 0 4 x 1 bit Fast Page M ode C M O S DRA M s. Fast P age M ode offe rs high speed random acce ss of m em ory ce lls w ithin the sam e row. P ow er su p p ly vo lta ge +5.0V o r + 3.3V , acce ss

Contextual Info: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

km41c4000c

Abstract: as4u
Contextual Info: CMOS DRAM KM41C4000C/CL/CSL 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000C/CUCSL is a high speed C M O S 4 ,1 9 4 ,3 0 4 x 1 D yn a m ic R and om A cce ss Memory. Its design is optimized for high performancd

KM41C4000C

Contextual Info: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

powec

Contextual Info: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: DRAM MODULE 16 Mega Byte KMM5334100A/AG Fast Page Mode 4M x33 DRAM SIM M , 2K Refresh , 5V x / Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5334100A is a 4M bit x 33 Dynamic RAM high density memory module. The Samsung KMM5334100A consists of eight CMOS

Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23

Contextual Info: DRAM MODULE / 16 Mega Byte KM M5324000CV/CVG Fast Page Mode 4Mx32 DRAM SIMM Using 4Mx1 DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324000CV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000CV consists of thirty two CMOS 4Mx1bit DRAMs in 20-pin SOJ packages

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

4Mx8 dram simm

Abstract: KM41C4000CJ
Contextual Info: DRAM MODULE 4 Mega Byte KMM584000C1 Fast Page Mode 4Mx8 DRAM SIMM , 1K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM584000C1 is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584000C1 consists of eight CMOS 4Mx1bit DRAMs in 20-pin SOJ packages mounted on

KM41C4000CJ

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364100A1 /A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5364100A1 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100A1 consists of eight CMOS

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100A1/A1G Fast Page Mode 8Mx36 DRAM SIMM Module, 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5368100A1 is a 8M bit x 36 Dynamic RAM high density memory module. The

KM44C4100AJ

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364100A1/A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Sam sung KMM5364100A1 is a 4M bit x 36 • Performance Range: D ynam ic RAM high density m em ory module. The

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

km41c4000cj

Abstract: ka5 capacitor
Contextual Info: DRAM MODULE 4 Mega Byte KMM594000C1 Fast Page Mode 4Mx9 DRAM SIMM , 1K Refresh , 5V G E N E R A L DESCRIPTIO N FEATURES The Samsung KMM594000C1 is a 4M bit x 9 Dynamic RAM high density memory module. The • Performance Range: Samsung KMM594000C1 consists of nine CMOS

KM416C60-7

Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Contextual Info: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55

KM44C4100AJ

Abstract: KM41C4000CJ
Contextual Info: DRAM MODULE 4 Mega Byte KMM5941OOAN Fast Page Mode 4M x9 DRA M S IM M , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DES C R IPTIO N The S am sung KM M 594100A N is a 4M bit x 9 FEATURES • Performance Range: D ynam ic RAM high de nsity m em ory module. The