KM432V515 Search Results

Contextual Info: KM432C515, KM432V515 CMOS DRAM 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cyde 1K, access time (-5 o r -6), power

Contextual Info: Preliminary KM432V515 CMOS DRAM 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +3.3V, refresh cycle 1K, access time -6, power consumption Normal or Low power and SOJ package type are features of this device. This device has CAS-before-ftAS refresh, RAS-only

Contextual Info: KM432C515, KM432V515 CMOS DRAM 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle 1K, access time (-5 or -6), power

KM432V515

Contextual Info: Preliminary CMOS DRAM KM432V515 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +3.3V, refresh cycle 1K, access time -6, power consumption Normal or Low power and SOJ package type are features of this device. This device has CAS-before-RAS refresh, RAS-only

KM432V515

Contextual Info: Preliminary CMOS DRAM KM432V515 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +3.3V, refresh cycle 1K, access time -6, power consumption Normal or Low power and SOJ package type are features of this device. This device has CAS-before-RAS refresh, RAS-only

Contextual Info: CMOS DRAM KM432C515, KM432V515 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION T his is a 524,288 x 32 bit E xtended D ata O ut C M O S DRAM . E xtended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page M ode. P ow er sup ply v oltage +5.0V o r +3.3V , refresh cycle 1 K, acce ss tim e (-5 o r -6), pow er

KM432V515

Contextual Info: KM432C515, KM432V515 CMOS DRAM 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle 1K, access time (-5 or -6), power

4MB DRAM

Abstract: 4MX16 1MX16
Contextual Info: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

KM4232W259

Contextual Info: GRAPHIC MEMORY PRODUCT GUIDE I. GRAPHIC BUFFER MEMORY PRODUCT GUIDE i N iä ä * Power Supply 1 o Product Part Number Speed Features V Package Remark 256K X 16 5V±10% KM4216C256# KM4216C258# 60/70/80 50/60/70 F/F EDO, 2W E F/F(EDO, 2CAS) 64SSO P Now Now

k2624

Contextual Info: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#