KM416S1020C Search Results

Contextual Info: KM416S1020C CMOS SDRAM 1Mx 16 SDRAM 5 12K X 16bit X 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.6 Sep. 1998 ELECTRONICS KM416S1020C CMOS SDRAM

KM416S1020

Abstract: 2 Banks x 512K x 16
Contextual Info: KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 0.6 Sep. 1998 KM416S1020C CMOS SDRAM Revision History

Contextual Info: KM416S1020C CMOS SDRAM 512K X 16Bitx 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S1020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS technol­

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

RFU1A

Contextual Info: KM416S1020C CMOS SDRAM 512K X 16Bit X 2 Banks Synchronous DRAM FEATURES • • • • GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs The KM416S1020C is 16,777,216 bits synchronous high data

Contextual Info: KM416S1020C CMOS SDRAM Revision History Revision 0.4 April 17, 1998 • Changed DC/AC Test Output Load from 30pF to 50pF in AC OPERATING TEST CONDITIONS . • Changed tOH from 2.5ns to 3ns in KM416S1020C-8/H/L/10 in AC CHARACTERISTICS . Revision 0.3 (April 2, 1998)

Contextual Info: KM416S1020C Preliminary CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .2 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.

KM416S1020

Abstract: KM416S1020CT
Contextual Info: KM416S1020C CMOS SDRAM 16Mbit SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.4 April 1998 -1- Rev. 0.4 Apr. 1998 KM416S1020C CMOS SDRAM Revision History Revision 0.4 (April 17, 1998) • Changed DC/AC Test Output Load from 30pF to 50pF in AC OPERATING TEST CONDITIONS .

CAMERA motion detection

Abstract: motion DETECTOR CIRCUIT DIAGRAM dpcm AF SO5 camera module af ECST dcp27 mark gb0 motion DETECTOR block DIAGRAM motion DETECTOR CIRCUIT
Contextual Info: DATA SHEET KS7333 PRODUCT INFORMATION PRODUCT SUMMARY KS7333 is a product used in video camera systems, such as camcorders and surveillance camera systems that use charge coupled devices CCD . It takes the CCD input as digital data and performs 3-D interpolation, image

sio lpc chip intel p4 motherboard

Abstract: rdi-dmt-1206 980020 NAND RJMG-5312-11-01 Amphenol RJMG intel 810 MOTHERBOARD pcb CIRCUIT rdi DMT-1206 intel 810 MOTHERBOARD pcb CIRCUIT diagram c.i GD75232 smd 82801 g SCHEMATIC DIAGRAM
Contextual Info: Intel 810 Chipset Design Guide June 1999 Order Number: 290657-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability

Contextual Info: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5 u A to ± 1uA, llL(DQ) : ± 5 u A to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1.4V ±200 mV.

km4132g512

Abstract: SGRAM RC2H KM4232W
Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE . 9 II. DUAL PORT RAM DATA SHEETS 1.KM4216C256 . VRAM EDO, 2WE , 256Kx16 . 13 2.KM4216C258 . VRAM(EDO, 2CAS), 256Kx16 .54

Contextual Info: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

XC5L

Contextual Info: KMM466S204CT 144pin SDRAM SODIMM KMM466S204CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S204CT Is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The SamsunQ

KMM366S204CTL-G0

Contextual Info: KMM366S204CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM466S104CT-F0

Abstract: KM416S1020CT-F10
Contextual Info: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.

gmZ4S

Abstract: 5400 samsung lcd monitor circuit diagram C0012-DSR-01C gmZ4U hyundai L19 MC141584 genesis lcd controller dram FSDATA45 lg crt monitor circuit diagram GM72V161621ET
Contextual Info: DATA SHEET gmZ4 C0012-DAT-01C July 2000 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 2150 Gold Street, Alviso, CA USA 95002 Tel: (408) 262-6599 Fax: (408) 262-6365 www.genesis-microchip.com / info@genesis-microchip.on.ca

Contextual Info: KM M466S1 04 CT 144pm S D R A M S O D IM M Revision History R evision .2 M ar. 1998 •Som e Parameters values & Characteristics of comp, level are changed as below : -In p u t leakage currents (Inputs) : ± 5 u A to ± 1 u A . -In p u t leakage currents (I/O) : ± 5 u A to ± 1 u A .

Contextual Info: KM M466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Som e Parameters values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 u A .

Contextual Info: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.

Contextual Info: Preliminary PC100 SDRAM MODULE KMM366S204CT Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(lnputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23 °C, f = 1MHz, V

KM48S2020

Abstract: KM48S2120 KM416S1120D KM44S4120D
Contextual Info: Memory Application Team Tel: 82-331-209-5371 Fax: 82-2-760-7990 GRAPHIC MEMORY APPLICATION NOTE Refresh Cycle change from 4K/64ms in C-die to 2K/32ms in 16M SDRAM D-die Refresh cycle time change from 4K/64ms to 2K/32ms This note has been prepared in an attempt to inform you that the refresh cycle time of

KMM366S104CT-G8

Abstract: KMM366S104CT-GH KMM366S104CT-GL
Contextual Info: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.