KM44C101 Search Results

Contextual Info: PRELIMINARY KM44C1010A CMOS DRAM 1 M X 4 Bit C M O S Dynamic R A M with Fast Page M ode Write Per Bit M ode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C K M 4 4 C 1 0 1 0A- 7 70 ns 20 n s 13 0 n s K M 4 4 C 1 0 1 0A- 8 80ns 20 ns

Contextual Info: KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION The Samsung KM44C1012A is a CMOS high speed 1,048,576 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

1010a

Contextual Info: PRELIMINARY KM44C1010A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES The Samsung KM 44C 1010A is a high speed CMOS 1 ,0 4 8 ,5 7 6 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 T b 4 m 2 GDlSTOb 332 ■ KM44C1010B CMOS DRAM 1M X 4Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1010B is a high speed CMOS 1,048,576x4 Dynamic Random Access Memory. Its

Contextual Info: CMOS DRAM KM44C1010C 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES •Performance range: • • • • • • • • • • • tRAC tCAC tRC KM44C1010C-5 50ns 13ns 90ns KM44C1010C-6 60ns 15ns 110ns

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TlbHlMS 00132^3 44b »SflGK KM44C1010A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fasi Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC I rc 70ns 20ns 130ns KM44C1010A-8 80ns 20ns

on 1012a ic

Abstract: 1012a AE12A
Contextual Info: PRELIMINARY KM44C1012A CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 1012A is a high speed CMOS 1 ,0 4 8 ,5 7 6 X 4 Dynamic Random Access Memory. Its

Contextual Info: PRELIMINARY CMOS DRAM KM44C1010A 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range: T h e S a m s u n g K M 4 4 C 1 0 1 0 A is a h ig h s p e e d C M O S tC A C 1 , 0 4 8 , 5 7 6 X 4 D y n a m ic R an d o m A c c e s s M e m o ry . Its

Contextual Info: KM44C1010A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM44C1010A is a CMOS high speed 1,048,576 b it x 4 D ynam ic Random A ccess M em ory. Its design is op tim ize d fo r high perform ance a p p lica tio n s

Contextual Info: KM44C1012B CMOS DRAM 1M x 4Bit CM O S Dynamic R A M with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: true •cac I rc KM44C1012A-7 70ns 20ns 130ns KM44C1012A-8 80ns 20ns 150ns KM44C1012A-10 100ns 25ns 180ns The Samsung KM44C1012A is a CMOS high speed

Contextual Info: KM44C101 OC CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit Fast Page M ode C M O S D RAM s. Fast Page M ode o ffe rs high speed random acce ss o1 m em ory cells w ithin th e sam e row. A ccess tim e(-5, -6, -7 or -8) and pa cka ge typ e (SO J ,

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 Q01S74S QÛ2 I KM44C1012B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its

Contextual Info: KM44C1010A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM44C1010A is a C M OS high speed 1,048,576 b it x 4 D ynam ic Random A cce ss M em ory. Its design is o p tim ize d fo r high pe rform ance a p p lica tio n s

Contextual Info: KM44C1010C CMOS DRAM 1 Mx 4 B i t CM O S Dynamic RAM with Fast Page Mode Write Per Bit Mode DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit Fast Page M ode C M O S D RAM s. Fast Page M ode o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. A ccess tim e(-5, -6, -7 or -8) and p a ckage type (SO J ,

Contextual Info: PRELIMINARY KM44C1012A CMOS DRAM 1 M X 4 Bit C M O S Dynamic RAM with Static Column M ode Write P er Bit M ode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 1 2 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 X 4 Dynamic Random A cce ss Mem ory. Its

ICT 20 PIN PLASTIC 300 MIL DIP

Contextual Info: KM44C1010B CMOS DRAM 1M X 4Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: I rac • • • • • • • • • • • tcAC tRC 110ns KM44C1010B-6 60ns 15ns KM44C1010B-7 70ns 20ns 130ns

Contextual Info: CMOS DRAM KM44C1010C 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES The S a m sun g K M 4 4 C 1 0 1 0 C is a high sp ee d C M O S 1, 0 4 8 , 5 7 6 x 4 D y n a m ic R a n d o m A c c e s s M e m o ry . Its

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

23c2100

Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7

Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23

SJ08

Abstract: MCM54400A mn414400asj mcm514400 20PIN KM44C1000ASL-10 KM44C1002A-7 KM44C1010A-10 KM44C1010A-7 MN414400
Contextual Info: - 234 - 4M m £ ì& m m tt £ ro CMOS x TRAC max ns TRCY (ns) D y n a m i c RAM (1 0 4 8 5 7 6 X 4 ) € 'i 7 f TCAD rain (ns) TAH (ns) TP tir (ns) TOCY min (ns) TDH rain (ns) TRWC min (ns) V D D or V C C (V) 2 0 P I N M I DD isax (mA) À I DD STANDBY U SV 1SB 2)

KM418C256

Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80