KM44S4020 Search Results

Contextual Info: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.

Contextual Info: KM44S4020B CMOS SDRAM 2M x 4Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply The KM44S4020B is 16,777.216 bits synchronous high data LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits,

KM44S4020CT

Abstract: KM44S4020
Contextual Info: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

Contextual Info: KM44S4020C CMOS SDRAM Revision History Revision ,4 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. REV. 4 Nov. '97 ELECTRONICS CMOS SDRAM

KM44S4020AT

Abstract: 71142 a
Contextual Info: KM44S4020AT SDRAM 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL compatible with multiplexed address. • Dual Bank. • MRS cycle with address key programs. -. CAS Latency 1, 2, 3 -. Burst Length {1, 2, 4, 8 & Full page)

KM44S4020AT10

Abstract: KM44S4020A
Contextual Info: PRELIMINARY KM44S4020A 4M X CMOS SDRAM 4 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEATURES - JEDEC standard 3.3V power supply. - LVTTL compatible with multiplexed address. - Dual bank / Pulse ftAS. - WCBR cycle with address key programs. • Latency Access from column address

KM44S4020BT

Abstract: a9283
Contextual Info: KM44S4020BT SDRAM ELECTRONICS 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed The KM44S4020B/KM44S4021B are 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .

KM44S4020CTG

Abstract: KM44S4020C
Contextual Info: KM44S4020C CMOS SDRAM 2M x 4BH x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S4020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol­

samsung power module

Abstract: KMM374S400BTN-G2 ADQ37 71b4
Contextual Info: KMM374S400BTN NEW JEDEC SDRAM MODULE KMM374S400BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S400BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

CDC2509

Abstract: KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL KM44S4020
Contextual Info: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 -. Input leakage current (Inputs) I IL is updated. -. Input Capacitances are updated. Revision 7 (May 1998) -. Revised PLL Input cap. 20pF to 5pF. -. CLK Input Cap. is added by PLL Input Cap. (5pF)

Contextual Info: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 Input leakage current (Inputs) I IL is updated. Input Capacitances are updated. Revision 7 (May 1998) -. Revised PLL Input cap. 20pF to 5pF. -. CLK Input Cap. is added by PLL Input Cap. (5pF)

CDC2509

Contextual Info: Prelim inary SDRAM MODULE KM M375S400CT KMM375S400CT SDRAM DIMM 4Mx72 SDRAM DIMM with PLL & Register based on 4Mx4, 4K Ref., 3.3V Synchronous DRAMs with SPD G E N E R A L DESCRIPTION FEATURE The Samsung KMM375S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

CDC2509

Abstract: KM44S4020 KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL 0A10
Contextual Info: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 -. Input leakage current (Inputs) I IL is updated. -. Input Capacitances are updated. REV. 6 May '98 Preliminary KMM375S400CT SDRAM MODULE KMM375S400CT SDRAM DIMM 4Mx72 SDRAM DIMM with PLL & Register based on 4Mx4, 4K Ref., 3.3V Synchronous DRAMs with SPD

hy57v16801

Abstract: KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out
Contextual Info: 2M/4M x 72 SYNCHRONOUS DRAM DIMM REFERENCE DESIGN APPLICATION NOTE AN-156 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION DESIGN KIT CONTENTS Expectations of main memory performance have finally reached a point that calls for the use of synchronous DRAMs.

schematic circuit adsl router part list

Abstract: 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon
Contextual Info: Excellence in Low-Power The way MICOM/DSP should be KS32C5000 A /KS32C50100 32-bit RISC Microcontroller for Network Solution Mar. 1999 ELECTRONICS Contents n n n Network Protocol n What is Network ? n OSI Reference Model and TCP/IP n TCP/IP Networking Software & Basic Protocol

KM48S2020BT-G10

Abstract: KM48S8030AT-G10 KM48S8030BT-G10 KM44S4020BT-G10 D4564821G5-A10-9JF KM48S2020AT KM48S2020AT-G10 MT48LC2M8A1 D4564821G5-A10 Viking
Contextual Info: This is a snapshot of our AlphaPC 164LX DIMM Qualification testing as of the 15th of October 1997. DIMMs PASSED QUALIFICATION TESTING Note :- AlphaPC 164LX uses x72 DIMMs only. Vendor MB/ Bank Dataram Kingston Kingston Kingston Micron Micron NEC NEC NEC NEC

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

Contextual Info: K M 4 4 S 4 0 2 1BT SDRAM ELECTRONICS 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

CDC2509

Contextual Info: Preliminary KMM378S400CT SDRAM MODULE KMM378S400CT SDRAM DIMM 4M x72 SDRAM DIMM with PLL & R egister based on 4M x4, 4K Ref. 3.3V S ynchronous DRAM s FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM378S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM366S400BTN NEW JEDEC SDRAM MODULE KMM366S400BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S400BTN is a 4M bit x 64 Synchronous Performance range Dynamic RAM high density memory module. The Samsung