Untitled
Abstract: No abstract text available
Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.
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KM44S4020C
PC100
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KM44S4020CT
Abstract: KM44S4020
Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.
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KM44S4020C
PC100
KM44S4020CT
KM44S4020
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CDC2509
Abstract: KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL KM44S4020
Text: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 -. Input leakage current (Inputs) I IL is updated. -. Input Capacitances are updated. Revision 7 (May 1998) -. Revised PLL Input cap. 20pF to 5pF. -. CLK Input Cap. is added by PLL Input Cap. (5pF)
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KMM375S400CT
KMM375S400CT
4Mx72
CDC2516
100Min
540Min)
150Max
CDC2509
KMM375S400CT-G0
KMM375S400CT-G8
KMM375S400CT-GH
KMM375S400CT-GL
KM44S4020
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KM48S2020
Abstract: KM48S2120 KM416S1120D KM44S4120D
Text: Memory Application Team Tel: 82-331-209-5371 Fax: 82-2-760-7990 GRAPHIC MEMORY APPLICATION NOTE Refresh Cycle change from 4K/64ms in C-die to 2K/32ms in 16M SDRAM D-die Refresh cycle time change from 4K/64ms to 2K/32ms This note has been prepared in an attempt to inform you that the refresh cycle time of
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4K/64ms
2K/32ms
2K/32ms
2K/32ms.
KM48S2020
KM48S2120
KM416S1120D
KM44S4120D
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CDC2509
Abstract: KM44S4020 KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL 0A10
Text: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 -. Input leakage current (Inputs) I IL is updated. -. Input Capacitances are updated. REV. 6 May '98 Preliminary KMM375S400CT SDRAM MODULE KMM375S400CT SDRAM DIMM 4Mx72 SDRAM DIMM with PLL & Register based on 4Mx4, 4K Ref., 3.3V Synchronous DRAMs with SPD
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KMM375S400CT
KMM375S400CT
4Mx72
400mil
20-bits
24-pin
CDC2516
CDC2509
KM44S4020
KMM375S400CT-G0
KMM375S400CT-G8
KMM375S400CT-GH
KMM375S400CT-GL
0A10
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hy57v16801
Abstract: KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out
Text: 2M/4M x 72 SYNCHRONOUS DRAM DIMM REFERENCE DESIGN APPLICATION NOTE AN-156 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION DESIGN KIT CONTENTS Expectations of main memory performance have finally reached a point that calls for the use of synchronous DRAMs.
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AN-156
200pin
4Mx72
A0-11
DQ0-72
hy57v16801
KM48S2020
FCT3932
KM44S4020
nec 44pin
AN-156
FCT163501
KM48S
HY57V16401-10
DIMM 72 pin out
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schematic circuit adsl router part list
Abstract: 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon
Text: Excellence in Low-Power The way MICOM/DSP should be KS32C5000 A /KS32C50100 32-bit RISC Microcontroller for Network Solution Mar. 1999 ELECTRONICS Contents n n n Network Protocol n What is Network ? n OSI Reference Model and TCP/IP n TCP/IP Networking Software & Basic Protocol
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KS32C5000
/KS32C50100
32-bit
Print3ff3024
0x1a048060
0x3ff3028
0x1c04a060
0x3ff302c
0x04000380
0x3ff3030
schematic circuit adsl router part list
29e010
78R05
KS32C50100
SNDS100
78R33
MAX232 CPE
29e010 datasheet
c-mac stp
samsung ribbon
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KM48S2020BT-G10
Abstract: KM48S8030AT-G10 KM48S8030BT-G10 KM44S4020BT-G10 D4564821G5-A10-9JF KM48S2020AT KM48S2020AT-G10 MT48LC2M8A1 D4564821G5-A10 Viking
Text: This is a snapshot of our AlphaPC 164LX DIMM Qualification testing as of the 15th of October 1997. DIMMs PASSED QUALIFICATION TESTING Note :- AlphaPC 164LX uses x72 DIMMs only. Vendor MB/ Bank Dataram Kingston Kingston Kingston Micron Micron NEC NEC NEC NEC
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164LX
KTV164LX/32
KTV164LX/64
KTV164LX/128
MT9LSDT272AG-66CL2
MT18LSDT472AG-66CL2
MC-452AA724F-A10
MC-454AC724F-A10
MC-458AA724F-A10
KM48S2020BT-G10
KM48S8030AT-G10
KM48S8030BT-G10
KM44S4020BT-G10
D4564821G5-A10-9JF
KM48S2020AT
KM48S2020AT-G10
MT48LC2M8A1
D4564821G5-A10
Viking
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IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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MB81141621
MB81141622
MB81G8322
MB81116421
TC59R1608
2ns500MHz
TC59R0808
IBM025161LG5D60
gm72v16821
MD908
KM48S2020
TC59R1809
GM72V1682
KM4232W259Q60
KM416S1120A
IBM025171LG5D-70
KM44S4020AT
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Untitled
Abstract: No abstract text available
Text: KM44S4020B CMOS SDRAM 2M x 4Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply The KM44S4020B is 16,777.216 bits synchronous high data LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits,
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KM44S4020B
KM44S4020B
10/AP
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km48s2020ct
Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
KM44S16020BT
KM48S8020BT
KM416S4020BT
KM416S4021BT
KM44S160308T
KM48S8030BT
S823B
4MX16
54-PIN
u108h
KM48S2020
44s16030
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Untitled
Abstract: No abstract text available
Text: KM44S4020C CMOS SDRAM Revision History Revision ,4 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. REV. 4 Nov. '97 ELECTRONICS CMOS SDRAM
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KM44S4020C
44S4020C
10/AP
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KM44S4020AT
Abstract: 71142 a
Text: KM44S4020AT SDRAM 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL compatible with multiplexed address. • Dual Bank. • MRS cycle with address key programs. -. CAS Latency 1, 2, 3 -. Burst Length {1, 2, 4, 8 & Full page)
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KM44S4020AT
KM44S4020A
44S4020A
44-TS0P2-400F
44-TSOP2-400R
0Q3b25&
71142 a
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KM44S4020AT10
Abstract: KM44S4020A
Text: PRELIMINARY KM44S4020A 4M X CMOS SDRAM 4 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEATURES - JEDEC standard 3.3V power supply. - LVTTL compatible with multiplexed address. - Dual bank / Pulse ftAS. - WCBR cycle with address key programs. • Latency Access from column address
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KM44S4020A
KM44S4020A
G02054b
KM44S4020AT10
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
------------------------------------16Mx4
4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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KM44S4020CTG
Abstract: KM44S4020C
Text: KM44S4020C CMOS SDRAM 2M x 4BH x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S4020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol
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KM44S4020C
KM44S4020C
KM44S4020CTG
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samsung power module
Abstract: KMM374S400BTN-G2 ADQ37 71b4
Text: KMM374S400BTN NEW JEDEC SDRAM MODULE KMM374S400BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S400BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM374S400BTN
KMM374S400BTN
4Mx72
400mil
168-pin
KMM374S400BTN-G8
KMM374S40OBTN-G0
KMM374S400BTN-G2
samsung power module
ADQ37
71b4
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Untitled
Abstract: No abstract text available
Text: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 Input leakage current (Inputs) I IL is updated. Input Capacitances are updated. Revision 7 (May 1998) -. Revised PLL Input cap. 20pF to 5pF. -. CLK Input Cap. is added by PLL Input Cap. (5pF)
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KMM375S400CT
KMM375S400CT
4Mx72
M375S400CT
150Max
SN74AL
VCH162836
KM44S4020CT
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CDC2509
Abstract: No abstract text available
Text: Prelim inary SDRAM MODULE KM M375S400CT KMM375S400CT SDRAM DIMM 4Mx72 SDRAM DIMM with PLL & Register based on 4Mx4, 4K Ref., 3.3V Synchronous DRAMs with SPD G E N E R A L DESCRIPTION FEATURE The Samsung KMM375S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM375S400CT
M375S400CT
4Mx72
400mil
20-bits
24-pin
168-pin
CDC2509
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Untitled
Abstract: No abstract text available
Text: K M 4 4 S 4 0 2 1BT SDRAM ELECTRONICS 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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KM44S4020B/KM44S4021B
KM44S4021BT)
44-TS0P2-400F
44-TSOP2-400R
0Q3b25&
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CDC2509
Abstract: No abstract text available
Text: Preliminary KMM378S400CT SDRAM MODULE KMM378S400CT SDRAM DIMM 4M x72 SDRAM DIMM with PLL & R egister based on 4M x4, 4K Ref. 3.3V S ynchronous DRAM s FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM378S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM378S400CT
KMM378S400CT
400mil
24-pin
200-pin
200pin
CDC2509
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Untitled
Abstract: No abstract text available
Text: KMM366S400BTN NEW JEDEC SDRAM MODULE KMM366S400BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S400BTN is a 4M bit x 64 Synchronous Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S400BTN
KMM366S400BTN
4Mx64
400mil
168-pin
KMM366S400BTN-G8
KMM366S400BTN-G0
KMM366S400BTN-G2
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