KM44V16104 Search Results

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 1 6 M x4b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 iait Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal

3125uS

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal

KM44V16104A

Abstract: 7t41hh a5e 104
Contextual Info: KM44V16004A, KM44V16104A CMOS DRAM 16M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data O ut M ode CM OS DRAM s. Extended Data Out Mode otters high speed random access of m em ory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: KM44V16004A, KM44V16104A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ret. or 8K Ref. ,

Contextual Info: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fam ily of 16 ,777,216 x 4 bit Extended Data O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access o f m em ory cells w ithin the sam e row. R efresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5, o r -6), po w e r co n sum p tion(N orm a l

k2917

Contextual Info: KM44V16004C,KM44V16104C CMOS DRAM 1 6 M x 4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal

Contextual Info: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal

44v16104

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consum ption(Norm al

Contextual Info: KM44V16104AK CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,

KM44V16104A

Contextual Info: KM44V16004A, KM44V16104A CMOS DRAM 16M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

km44v161

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal

Contextual Info: KM44 V 1 6004 AS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: DRAM MODULE KMM372F320 8 0BS1 KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits

Contextual Info: KMM372F3200AK/AS KMM372F3280AK/AS DRAM MODULE KMM372F3200AK/AS & KMM372F3280AK/AS Fast Page with EDO Mode 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The

KM44V16104AK

Abstract: samsung dram
Contextual Info: KMM372F3200AK2 DRAM Module ELECTRONICS KMM372F3200AK2/AS2 & KMM372F3280AK2/AS2 Fast Page with EDO 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The

KMM372F3200BS1

Abstract: KMM372F3280BS1 KM44V16104
Contextual Info: KMM372F320 8 0BS1 DRAM MODULE KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits

KMM372F1600BK

Abstract: KMM372F1600BS KMM372F1680BK KMM372F1680BS MIC29750-5.0BK
Contextual Info: KMM372F160 8 0BK/BS DRAM MODULE KMM372F160(8)0BK/BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F160(8)0B consists of eighteen CMOS 16Mx4bits

Contextual Info: K M 4 4 V 16104AS CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: KMM374F1600AK1 ELECTRONICS DRAM Module KMM374F1680AK & KMM374F1600AK EDO Mode without buffer 16Mx72 DRAM DIMM with ECC based on 16Mx4, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification Part number KMM374F1680AK KMM374F1600AK The Samsung KMM374F168 0 0AK is a 16M bit x 72

Contextual Info: KMM372F320 8 0CK4 DRAM MODULE KMM372F320(8)0CK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0CK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0CK4 consists of thirty-six CMOS 16Mx4bits

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

KMM372F3200CS1

Abstract: KMM372F3280CS1
Contextual Info: KMM372F320 8 0CS1 DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6

Contextual Info: DRAM MODULE KMM366F160 8 0BK3 Revision History Version 0.0(Nov. 1997) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F160(8)0BK to KMM366F160(8)0BK3 caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM366F160(8)0BK3