KM48V8100B Search Results

Contextual Info: KM48V8000B, KM48V8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

Contextual Info: KM48V8000B, KM48V8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

Contextual Info: KM48V8000B, KM48V8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are

Contextual Info: KMM372V80 8 3BK/BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6

Contextual Info: DRAM MODULE KMM332V803BS-L 8Mx32 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

Contextual Info: DRAM MODULE KMM332V803BS-L 8Mx32 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

Contextual Info: KM M 372V80 8 3B K/B S DRAM MODULE KM M 37 2V 80 (8) 3B K/B S F as t Page M o d e 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372V80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The

KMM372V803BK

Abstract: KMM372V803BS KMM372V883BK KMM372V883BS
Contextual Info: KMM372V80 8 3BK/BS DRAM MODULE KMM372V80(8)3BK/BS Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V80(8)3B consists of nine CMOS 8Mx8bits DRAMs

k2624

Contextual Info: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#

KMM372V803BK

Abstract: KMM372V803BS KMM372V883BK KMM372V883BS
Contextual Info: KMM372V80 8 3BK/BS DRAM MODULE KMM372V80(8)3BK/BS Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V80(8)3B consists of nine CMOS 8Mx8bits DRAMs

Contextual Info: DRAM MODULE KMM332V803BS-L 8Mx32 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V803BS-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.