KM6161000BLTI Search Results
KM6161000BLTI Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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KM6161000BLTI-10L |
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64K x16 bit Low Power CMOS Static RAM | Original | 151.55KB | 9 | ||
KM6161000BLTI-7L |
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64K x16 bit Low Power CMOS Static RAM | Original | 151.55KB | 9 | ||
KM6161000BLTI-7LT |
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IC SRAM CHIP ASYNC SINGLE 5V 1MBIT 64KX16 70NS 44TSOP-II | Original | 103.01KB | 9 |
KM6161000BLTI Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TT1102
Abstract: 100PF
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KM6161000BLI 64Kx16 550pW 275nW 660mW I/01-I/08 KM6161000BLTI/LTI-L: 400mil KM6161000BLRI/LR1-L: TT1102 100PF | |
KM6161000BLT7L
Abstract: KM6161000BLTI-7L
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Original |
KM6161000B KM6161000BLT7L KM6161000BLTI-7L | |
km6161000blti
Abstract: FTC 960 6161000BL
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KM6161000B 64Kx16 64Kx16 44-TSOP I/01-7 7CJb4142 023bMcl km6161000blti FTC 960 6161000BL | |
KM6161000BLT5LContextual Info: KM6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION The KM6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package |
OCR Scan |
KM6161000B 44-TSOP D03bbbb KM6161000BLT5L | |
Contextual Info: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996 |
Original |
KM6161000B | |
Contextual Info: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION •Industrial Temperature Range : -40 to 85°C The KM6161000BLI/LI-L is a 1,048,576-bit high speed >Fast Access Time : 70/100 ns max. |
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KM6161000BLI 64Kx16 KM6161000BLI/LI-L 576-bit 550uW 6161000BLI/LI-L 660mW Q021271 | |
Contextual Info: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min |
OCR Scan |
KM6161000B 64Kx16 64Kx16 44-TS0P | |
Contextual Info: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996 |
OCR Scan |
KM6161000B | |
Contextual Info: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft August 12th 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15th 1996 Final |
OCR Scan |
KM6161000B | |
a13eContextual Info: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min |
OCR Scan |
KM6161000B 64Kx16 64Kx16 44-TSOP a13e |